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STD30PF30L [ETC]

P-CHANNEL 30V - 0.025 OHM - 24A IPAK/DPAK STRIPFET II POWER MOSFET ; P沟道30V - 0.025欧姆 - 24A IPAK / DPAK的STripFET II功率MOSFET\n
STD30PF30L
型号： STD30PF30L
厂家： ETC    ETC
描述：

P-CHANNEL 30V - 0.025 OHM - 24A IPAK/DPAK STRIPFET II POWER MOSFET
P沟道30V - 0.025欧姆 - 24A IPAK / DPAK的STripFET II功率MOSFET\n
文件： 总10页 (文件大小：476K)
中文：  中文翻译
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STD30PF30L  
P-CHANNEL 30V - 0.025 Ω - 24A IPAK/DPAK  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STD30PF30L  
30 V  
<0.028 Ω  
24  
■
■
TYPICAL R (on) = 0.025Ω  
DS  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW TRESHOLD DEVICE  
3
3
■
■
■
2
1
LOW GATE CHARGE  
1
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX “-1")  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
IPAK  
DPAK  
TO-252  
(Suffix “T4”)  
TO-251  
■
(Suffix “-1”)  
DESCRIPTION  
This MOSFET is the latest development of  
STMicroelectronics unique “Single Feature Size™” strip-  
based process The resulting transistor shows extremely  
high packing density for low on-resistance and low gate  
charge.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
DC-DC CONVERTERS  
Ordering Information  
SALES TYPE  
STD30PF03LT4  
STD30PF03L-1  
MARKING  
D30PF30L  
D30PF30L  
PACKAGE  
TO-252  
TO-251  
PACKAGING  
TAPE & REEL  
TUBE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-source Voltage (V = 0)  
30  
30  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
V
DGR  
GS  
V
Gate- source Voltage  
± 16  
24  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D(#)  
C
I
Drain Current (continuous) at T = 100°C  
24  
A
D(#)  
C
I (•)  
DM  
Drain Current (pulsed)  
96  
A
P
Total Dissipation at T = 25°C  
70  
W
tot  
C
Derating Factor  
0.47  
850  
W/°C  
mJ  
E
Single Pulse Avalanche Energy  
Storage Temperature  
AS(1)  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
(#) Current limited by wire bonding  
o
DD  
(1) Starting T = 25 C, I =12 A, V = 15V  
j
D
May 2003  
1/10  
.
STD30PF30L  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Rthj-pcb  
Thermal Resistance Junction-case  
Max  
Max  
Max  
2.14  
100  
50  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-ambient  
(*)  
Thermal Resistance Junction-pcb  
T
275  
Maximum Lead Temperature For Soldering Purpose  
l
(*)  
2
When Mounted on 1 inch FR-4 board, 2 oz of Cu  
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
= 250 µA, V = 0  
30  
V
V
D
GS  
(BR)DSS  
Breakdown Voltage  
V
= Max Rating  
DS  
Zero Gate Voltage  
1
10  
µA  
µA  
I
I
DSS  
Drain Current (V = 0)  
V
DS  
= Max Rating T = 100°C  
GS  
C
Gate-body Leakage  
V
GS  
= ± 16 V  
±100  
nA  
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
GS(th)  
V
= V  
I
= 250 µA  
D
Gate Threshold Voltage  
1
V
DS  
GS  
V
V
= 10 V  
= 5 V  
I
I
= 12 A  
= 12 A  
Static Drain-source On  
Resistance  
0.025  
0.032  
0.028  
0.040  
Ω
Ω
GS  
D
D
R
DS(on)  
GS  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 15 V = 12 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
I
D
g
fs  
Forward Transconductance  
23  
S
DS  
DS  
= 25V, f = 1 MHz, V = 0  
C
iss  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
1670  
345  
120  
pF  
pF  
pF  
GS  
C
oss  
C
rss  
2/10  
STD30PF30L  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 25 V  
Min.  
Typ.  
Max.  
Unit  
V
R
I
= 24 A  
= 5 V  
GS  
Turn-on Delay Time  
Rise Time  
64  
122  
ns  
ns  
t
DD  
D
d(on)  
= 4.7 Ω  
V
t
r
G
(Resistive Load, Figure 3)  
Q
V
= 15V I = 24A V = 5V  
D GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
21  
5.5  
11  
28  
nC  
nC  
nC  
g
DD  
Q
gs  
Q
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
= 25 V  
I
= 24 A  
D
Turn-off Delay Time  
Fall Time  
36  
26  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
GS  
= 5 V  
t
G
f
(Resistive Load, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
24  
96  
A
A
SD  
( )  
•
I
SDM  
(*)  
I
I
= 12 A  
V
= 0  
GS  
V
Forward On Voltage  
1.3  
V
SD  
SD  
SD  
t
= 24 A  
= 24 V  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
40  
52  
2.6  
ns  
nC  
A
rr  
Q
V
rr  
DD  
j
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Thermal Impedance  
Safe Operating Area  
3/10  
STD30PF30L  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/10  
STD30PF30L  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage vs Temperature  
.
.
5/10  
STD30PF30L  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/10  
STD30PF30L  
TO-251 (IPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.2  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.027  
0.025  
0.204  
MAX.  
0.094  
0.043  
0.051  
0.031  
0.212  
0.033  
A
A1  
A3  
B
0.9  
1.1  
0.7  
1.3  
0.64  
5.2  
0.9  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.012  
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
16.3  
9.4  
1.2  
1
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.039  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
6.4  
4.4  
15.9  
9
G
H
L
L1  
L2  
0.8  
0.8  
0.031  
H
L
D
L2  
L1  
0068771-E  
7/10  
STD30PF30L  
TO-252 (DPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.2  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.019  
0.236  
0.252  
0.173  
0.368  
MAX.  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.260  
0.181  
0.397  
A
A1  
A2  
B
0.9  
1.1  
0.03  
0.64  
5.2  
0.23  
0.9  
B2  
C
5.4  
0.45  
0.48  
6
0.6  
C2  
D
0.6  
6.2  
E
6.4  
6.6  
G
4.4  
4.6  
H
9.35  
10.1  
L2  
L4  
0.8  
0.031  
0.6  
1
0.023  
0.039  
H
DETAIL "A"  
D
L2  
DETAIL "A"  
L4  
0068772-B  
8/10  
STD30PF30L  
*on sales type  
9/10  
STD30PF30L  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2003 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
10/10  

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