STD1NK60 [STMICROELECTRONICS]
N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET; N沟道600V - 8 - 1A的DPAK / IPAK / TO- 92超网功率MOSFET
| 型号： | STD1NK60 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET |
| 文件： | 总13页 (文件大小：749K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD1NK60 - STD1NK60-1
STQ1HNK60R
N-CHANNEL 600V - 8Ω - 1A DPAK / IPAK / TO-92
SuperMESH™Power MOSFET
TYPE
V
R
I
D
Pw
DSS
DS(on)
STD1NK60
STD1NK60-1
STQ1HNK60R
600 V
600 V
600 V
< 8.5 Ω
< 8.5 Ω
< 8.5 Ω
1 A
1 A
0.4 A
30 W
30 W
3 W
3
3
2
1
1
IPAK
DPAK
■
■
■
■
■
TYPICAL R (on) = 8 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
NEW HIGH VOLTAGE BENCHMARK
TO-92 (Ammopack)
TO-92
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
LOW POWER BATTERY CHARGERS
ORDERING INFORMATION
SALES TYPE
MARKING
D1NK60
PACKAGE
PACKAGING
TAPE & REEL
TUBE
STD1NK60T4
STD1NK60-1
DPAK
IPAK
D1NK60
STQ1HNK60R
STQ1HNK60R-AP
1HNK60R
1HNK60R
TO-92
TO-92
BULK
AMMOPAK
June 2003
1/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STD1NK60
STD1NK60-1
STQ1HNK60R
V
Drain-source Voltage (V = 0)
600
600
± 30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
1.0
0.63
4
0.4
0.25
1.6
A
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
30
3
W
C
Derating Factor
0.24
0.025
W/°C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
3
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤1.0A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
THERMAL DATA
DPAK / IPAK
TO-92
Rthj-case
Rthj-amb
Rthj-lead
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
4.16
100
°C/W
°C/W
°C/W
°C
120
40
T
Maximum Lead Temperature For Soldering
Purpose
275
260
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
DPAK / IPAK
Unit
TO-92
I
AR
Avalanche Current, Repetitive or Not-Repetitive
1
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
25
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
2/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 1 mA, V = 0
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
I
Gate-body Leakage
V
= ± 30V
±100
nA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 250µA
Gate Threshold Voltage
2.25
3
8
3.7
8.5
V
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 0.5 A
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
> I
x R
DS(on)max,
1
S
fs
DS
D(on)
I
= 0.5 A
D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
156
23.5
3.8
pF
pF
pF
iss
DS
GS
C
oss
C
rss
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 300 V, I = 0.5 A
= 4.7Ω V = 10 V
GS
6.5
5
ns
ns
d(on)
DD
D
t
r
G
(Resistive Load see, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 480V, I = 1.0 A,
7
1.1
3.4
10
nC
nC
nC
g
DD
GS
D
Q
gs
gd
= 10V, R = 4.7Ω
G
Q
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off Delay Time
Fall Time
V
= 300 V, I = 0.5 A
19
25
ns
ns
d(off)
DD
D
t
f
R = 4.7Ω V = 10 V
G GS
(Resistive Load see, Figure 3)
t
V
R
= 480V, I = 1.0 A,
Off-voltage Rise Time
Fall Time
Cross-over Time
24
25
44
ns
ns
ns
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
G
GS
t
c
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
1
4
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 1.0 A, V = 0
Forward On Voltage
1.6
V
SD
SD
SD
GS
t
= 1.0 A, di/dt = 100A/µs
= 25V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
229
377
3.3
ns
µC
A
rr
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Safe Operating Area For DPAK/IPAK
Thermal Impedance For DPAK/IPAK
Thermal Impedance For TO-92
Transfer Characteristics
Safe Operating Area For TO-92
Output Characteristics
4/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Static Drain-source On Resistance
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Max Id Current vs Tc
Maximum Avalanche Energy vs Temperature
6/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
8/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
9/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-92 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
MIN.
0.170
0.014
0.175
0.130
0.094
0.044
0.50
MAX.
0.194
0.020
0.194
0.155
0.105
0.055
0.610
0.094
0.060
0.022
A
b
D
E
e
e1
L
R
S1
W
V
0.085
0.036
0.016
5°
5°
10/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
11/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-92 AMMOPACK
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
4.8
MIN.
MAX.
0.19
0.15
0.06
0.09
0.02
0.51
0.27
0.11
0.08
0.74
0.24
0.36
0.02
0.80
0.65
0.98
0.16
0.035
0.43
A1
T
3.8
T1
1.6
T2
2.3
d
0.458
12.5
5.65
2.44
-2
0.505
12.9
7.05
2.94
2
0.018
0.49
0.22
0.09
-0.08
0.69
0.22
0.33
P0
12.7
6.35
2.54
0.5
0.25
0.1
P2
F1, F2
delta H
W
17.5
5.7
18
6
19
0.71
0.23
0.35
W0
W1
W2
H
6.3
8.5
9
9.25
0.5
18.5
15.5
20.5
16.5
25
0.72
0.61
H0
H1
D0
t
16
4
0.63
3.8
4.2
0.15
0.157
0.9
L
11
l1
3
0.11
delta P
-1
1
-0.04
0.04
12/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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13/13
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