STD1NK60_08 [STMICROELECTRONICS]
N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET; N沟道600V - 8Ω - 1A DPAK / TO- 92 / IPAK / SOT- 223超网MOSFET
| 型号： | STD1NK60_08 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET |
| 文件： | 总15页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223
SuperMESH™ MOSFET
Table 1: General Features
Figure 1: Package
TO-92 (Ammopack)
TYPE
V
R
I
D
Pw
DSS
DS(on)
STD1NK60
600 V < 8.5 Ω
600 V < 8.5 Ω
600 V < 8.5 Ω 0.4 A
600 V < 8.5 Ω 0.4 A
1 A
1 A
30 W
30 W
3 W
STD1NK60-1
STQ1HNK60R
STN1HNK60
3
1
3.3 W
■ TYPICAL R (on) = 8 Ω
DPAK
DS
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ESD IMPROVED CAPABILITY
■ 100% AVALANCHE TESTED
2
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
3
2
3
1
2
1
SOT-223
DESCRIPTION
IPAK
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ LOW POWER BATTERY CHARGERS
■ SWITH MODE LOW POWER
SUPPLIES(SMPS)
■ LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number
STD1NK60T4
STD1NK60-1
Marking
D1NK60
Package
DPAK
Packaging
TAPE & REEL
TUBE
D1NK60
IPAK
STQ1HNK60R
STQ1HNK60R-AP
STN1HNK60
1HNK60R
1HNK60R
N1HNK60
TO-92
TO-92
SOT-223
BULK
AMMOPAK
TAPE & REEL
Rev. 3
February 2006
1/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-92
600
600
± 30
0.4
Unit
DPAK / IPAK
SOT-223
V
DS
Drain-source Voltage (V = 0)
V
V
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
GS
V
GS
Gate- source Voltage
V
I
D
Drain Current (continuous) at T = 25°C
1.0
0.63
4
0.4
0.25
1.6
A
C
I
D
Drain Current (continuous) at T = 100°C
0.25
1.6
A
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
30
3
3.3
W
C
Derating Factor
0.24
0.025
3
0.025
W/°C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤1.0A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX.
SD
DD
Table 4: Thermal Data
DPAK/IPAK
TO-92
--
SOT-223
Unit
°C/W
°C/W
°C/W
°C
Rthj-case
Rthj-amb
Rthj-lead
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
4.16
100
--
--
37.87 (#)
--
120
40
T
Maximum Lead Temperature For Soldering
275
260
l
Purpose
2
(#) When mounted on FR-4 board of 1 in , 2oz Cu, t < 10 sec
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
1
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
25
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 1mA, V = 0
600
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 30V
±100
nA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
2.25
3
8
3.7
8.5
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 0.5 A
Ω
DS(on)
GS
D
2/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
V
V
= 15 V I = 0.5 A
1
S
Forward Transconductance
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25V, f = 1 MHz, V = 0
156
23.5
3.8
pF
pF
pF
iss
DS
GS
oss
rss
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
V
= 300 V, I = 0.5 A,
6.5
5
19
ns
ns
ns
ns
d(on)
DD
D
t
r
R = 4.7 Ω, V = 10 V
G GS
(Resistive Load see, Figure
21)
t
d(off)
Fall Time
25
t
r
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 480V, I = 1 A,
10
7
1.1
3.7
nC
nC
nC
g
DD
D
Q
gs
gd
= 10V, R = 4.7 Ω
GS
G
Q
(see, Figure 23)
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
1
4
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 1.0 A, V = 0
Forward On Voltage
1.6
V
SD
SD
GS
t
= 1.0 A, di/dt = 100 A/µs
= 25V, T = 25°C
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
SD
140
240
3.3
ns
µC
A
Q
V
DD
rr
j
I
(see test circuit, Figure 22)
RRM
t
Q
I
= 1.0 A, di/dt = 100 A/µs
= 25V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
229
377
3.3
ns
µC
A
rr
SD
V
DD
rr
j
I
(see test circuit, Figure 22)
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
3/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Figure 3: .Safe Operating Area For SOT-223
Figure 4: Safe Operating Area For DPAK/IPAK
Figure 5: Safe Operating Area For TO-92
Figure 6: Thermal Impedance For SOT-223
Figure 7: Thermal Impedance For DPAK/IPAK
Figure 8: Thermal Impedance For TO-92
4/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Figure 12: Transfer Characteristics
Figure 9: Output Characteristics
Figure 10: Transconductance
Figure 11: Capacitance Variations
Figure 13: Gate Charge vs Gate-source Voltage
Figure 14: Static Drain-source On Resistance
5/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Figure 15: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 18: Normalized On Resistance vs Tem-
perature
Figure 16: Source-Drain Forward Characteris-
tics
Figure 19: Normalized BV
vs Temperature
DSS
Figure 17: Maximum Avalanche Energy vs
Temperature
Figure 20: Max Id Current vs Tc
6/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Figure 21: Switching Times Test Circuit For
Figure 23: Gate Charge Test Circuit
Resistive Load
Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
TO-92 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
TYP
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
MIN.
0.170
0.014
0.175
0.130
0.094
0.044
0.50
MAX.
0.194
0.020
0.194
0.155
0.105
0.055
0.610
0.094
0.060
0.022
A
b
D
E
e
e1
L
R
S1
W
V
0.085
0.036
0.016
5°
5°
8/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
TO-92 AMMOPACK
mm.
TYP
inch
TYP.
DIM.
MIN.
4.45
3.30
MAX.
4.95
3.94
1.6
MIN.
0.170
0.130
MAX.
0.194
0.155
0.06
0.09
0.022
0.51
0.27
0.11
0.08
0.74
0.24
0.36
0.02
0.80
0.65
0.98
0.16
0.035
0.43
A1
T
T1
T2
2.3
d
0.41
12.5
5.65
2.44
-2
0.56
12.9
7.05
2.94
2
0.016
0.49
0.22
0.09
-0.08
0.69
0.22
0.33
P0
12.7
6.35
2.54
0.5
0.25
0.1
P2
F1, F2
delta H
W
17.5
5.7
18
6
19
0.71
0.23
0.35
W0
W1
W2
H
6.3
8.5
9
9.25
0.5
18.5
15.5
20.5
16.5
25
0.72
0.61
H0
H1
D0
t
16
4
0.63
3.8
4.2
0.15
0.157
0.9
L
11
l1
3
0.11
delta P
-1
1
-0.04
0.04
9/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
SOT-223 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.80
0.80
3.10
0.32
6.70
MIN.
MAX.
0.071
0.031
0.122
0.013
0.264
A
B
0.60
2.90
0.24
6.30
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
0.024
0.114
0.009
0.248
0.027
0.118
0.010
0.256
0.090
0.181
0.138
0.276
B1
c
D
e
e1
E
3.30
6.70
3.70
7.30
10o
0.130
0.264
0.146
0.287
10o
H
V
A1
0.02
P008B
10/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
11/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
12/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
13/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Table 9: Revision History
Date
Revision
Description of Changes
22-Nov-2004
14-Feb-2006
2
3
Added SOT-223 Package and new stylesheet
Modified marking on Table 2
14/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2006 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
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Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
15/15
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