STD1NK80Z-1 [STMICROELECTRONICS]
N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET; N沟道800V - 13ヘ - 1 A TO- 92 / SOT- 223 / DPAK / IPAK齐纳 - 保护SuperMESH⑩ MOSFET
| 型号： | STD1NK80Z-1 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET |
| 文件： | 总15页 (文件大小：633K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STQ1NK80ZR-AP - STN1NK80Z
STD1NK80Z - STD1NK80Z-1
N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK
Zener - Protected SuperMESH™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
V
DSS
R
I
D
Pw
DS(on)
2
STQ1NK80ZR-AP 800 V < 16 Ω
0.3 A
3 W
STN1NK80Z
STD1NK80Z
STD1NK80Z-1
800 V < 16 Ω 0.25A 2.5 W
3
2
800 V < 16 Ω
800 V < 16 Ω
1.0 A 45 W
1.0 A 45 W
1
■ TYPICAL R (on) = 13Ω
SOT-223
DS
TO-92 (Ammopack)
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ESD IMPROVED CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
3
3
1
2
1
DESCRIPTION
DPAK
IPAK
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ AC ADAPTORS AND BATTERY CHARGERS
■ SWITH MODE POWER SUPPLIES (SMPS)
Table 2: Order Codes
SALES TYPE
STQ1NK80ZR-AP
STN1NK80Z
MARKING
Q1NK80ZR
N1NK80Z
D1NK80Z
D1NK80Z
PACKAGE
TO-92
PACKAGING
AMMOPAK
TAPE & REEL
TAPE & REEL
TUBE
SOT-223
DPAK
STD1NK80ZT4
STD1NK80Z-1
IPAK
Rev. 3
January 2006
1/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
SOT-223
800
Unit
TO-92
DPAK/IPAK
V
DS
Drain-source Voltage (V = 0)
V
V
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
800
GS
V
Gate- source Voltage
± 30
0.25
0.16
5
V
GS
I
Drain Current (continuous) at T = 25°C
0.3
1.0
A
D
C
I
Drain Current (continuous) at T = 100°C
0.19
0.63
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
3
2.5
45
W
C
Derating Factor
0.025
0.02
1000
4.5
0.36
W /°C
V
V
Gate source ESD (HBM-C= 100pF, R= 1.5KΩ)
Peak Diode Recovery voltage slope
ESD(G-S)
dv/dt (1)
V/ns
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤ 1 A, di/dt ≤ 200 A/µs, V ≤ 640
SD
DD
Table 4: Thermal Data
TO-92
--
SOT-223
DPAK/IPAK
Unit
°C/W
°C/W
°C/W
°C
Rthj-case
Thermal Resistance Junction-case Max
--
50
--
2.78
100
--
Rthj-amb(#) Thermal Resistance Junction-ambient Max
120
40
Rthj-lead
Thermal Resistance Junction-lead Max
T
Maximum Lead Temperature For Soldering
Purpose
260
--
300
l
(#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
1
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
50
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
Table 6: GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Gate-Source Breakdown Igs=± 1mA (Open
Voltage Drain)
Test Conditions
Min.
Typ.
Max.
Unit
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 1 mA, V = 0
800
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 20V
±10
µA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 50 µA
Gate Threshold Voltage
3
3.75
13
4.5
16
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 0.5 A
Ω
DS(on)
GS
D
Table 8: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
V
= 15 V I = 0.5 A
0.8
S
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
= 25 V f = 1 MHz, V = 0
160
26
6.7
pF
pF
pF
iss
DS
,
GS
oss
rss
C
(3) Equivalent Output
Capacitance
V
V
= 0V, V = 0V to 640V
9.5
pF
oss eq.
GS
DS
t
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
= 400 V, I = 0.5 A
8
ns
ns
ns
ns
d(on)
DD
D
30
22
55
t
r
R = 4.7Ω V = 10 V
G GS
(see Figure 21)
d(off)
Fall Time
t
f
Q
V
V
= 640V, I = 1.0 A,
= 10V
7.7
1.4
4.5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
nC
nC
nC
g
DD
D
Q
gs
gd
GS
Q
(see Figure 24)
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
1.0
5
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 1.0 A, V = 0
GS
Forward On Voltage
1.6
V
SD
SD
t
rr
= 1.0 A, di/dt = 100 A/µs
= 50 V, T = 25°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
365
802
4.4
ns
nC
A
SD
Q
V
DD
(see Figure 22)
rr
j
I
RRM
t
Q
I
= 1.0 A, di/dt = 100 A/µs
= 50 V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
388
802.7
4.6
ns
nC
A
rr
SD
V
DD
(see Figure 22)
rr
j
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
DSS
3/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 3: Safe Operating Area for SOT-223
Figure 4: Safe Operating Area for TO-92
Figure 5: Safe Operating Area for IPAK-DPAK
Figure 6: Thermal Impedance for SOT-223
Figure 7: Thermal Impedance for TO-92
Figure 8: Thermal Impedance for DPAK-IPAK
4/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 9: Output Characteristics
Figure 12: Transfer Characteristics
Figure 13: Static Drain-source On Resistance
Figure 14: Capacitance Variations
Figure 10: Transconductance
Figure 11: Gate Charge vs Gate-source Voltage
5/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 15: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 18: Normalized On Resistance vs Tem-
perature
Figure 16: Source-Drain Diode Forward Char-
acteristics
Figure 19: Normalized BVdss vs Temperature
Figure 17: Avalanche Energy vs Starting Tj
6/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 20: Unclamped Inductive Load Test Cir-
Figure 23: Unclamped Inductive Wafeform
cuit
Figure 21: Switching Times Test Circuit For
Resistive Load
Figure 24: Gate Charge Test Circuit
Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
8/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
9/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
TO-92 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
TYP
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
MIN.
0.170
0.014
0.175
0.130
0.094
0.044
0.50
MAX.
0.194
0.020
0.194
0.155
0.105
0.055
0.610
0.094
0.060
0.022
A
b
D
E
e
e1
L
R
S1
W
V
0.085
0.036
0.016
5°
5°
10/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
SOT-223 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.80
0.80
3.10
0.32
6.70
MIN.
MAX.
0.071
0.031
0.122
0.013
0.264
A
B
0.60
2.90
0.24
6.30
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
0.024
0.114
0.009
0.248
0.027
0.118
0.010
0.256
0.090
0.181
0.138
0.276
B1
c
D
e
e1
E
3.30
6.70
3.70
7.30
10o
0.130
0.264
0.146
0.287
10o
H
V
A1
0.02
P008B
11/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
12/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
13/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Table 10: Revision History
Date
Revision
Description of Changes
08-Jun-2005
06-Sep-2005
16-Jan-2006
1
2
3
First Release
Inserted Ecopack indication
Corrected value on Table 3
14/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2006 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
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Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
15/15
相关型号：
STD1NK80ZT4
N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET
STMICROELECTR
STD200
This axial leaded strap product is designed to provide reliable, non-cycling protection for rechanrgeable batteries
LITTELFUSE
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