STD12NE06T4 [STMICROELECTRONICS]
12A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3;
| 型号： | STD12NE06T4 |
| 厂家： | 
ST |
| 描述： | 12A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD12NE06
®
N - CHANNEL 60V - 0.08Ω - 12A - IPAK/DPAK
SINGLE FEATURE SIZE POWER MOSFET
TYPE
STD12NE06
VDSS
RDS(on)
ID
60 V
< 0.10 Ω
12 A
■
■
■
■
■
TYPICAL RDS(on) = 0.08 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
3
2
■
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
1
1
DESCRIPTION
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size " strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
Parameter
Value
Unit
V
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
60
60
V
± 20
V
o
Drain Current (continuous) at Tc = 25 C
12
A
o
ID
Drain Current (continuous) at Tc = 100 C
8
A
I
DM(•)
Drain Current (pulsed)
48
A
o
Ptot
Total Dissipation at Tc = 25 C
35
0.23
W
Derating Factor
W/oC
V/ns
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
6
Tstg
Storage Temperature
-65 to 175
Tj
Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
(1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/10
March 1999
STD12NE06
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Max
Typ
4.3
100
1.5
oC/W
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
275
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
12
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 25 V)
45
mJ
o
(Tcase = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
60
V
IDSS
IGSS
VDS = Max Rating
1
10
µA
µA
Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
Gate Threshold Voltage VDS = VGS ID = 250 µA
2
RDS(on)
Static Drain-source On VGS = 10V ID = 6 A
Resistance
0.08
0.10
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
12
A
V
GS = 10 V
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =6 A
Min.
Typ.
Max.
Unit
gfs ( )
6
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS = 25 V f = 1 MHz VGS = 0
760
100
30
1000
140
45
pF
pF
pF
2/10
STD12NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
VDD = 30 V
G = 4.7 Ω
(see test circuit, figure 3)
Min.
Typ.
Max.
Unit
td(on)
tr
ID = 6 A
VGS = 10 V
10
35
15
50
ns
ns
Rise Time
R
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 40 V ID = 12 A VGS = 10 V
20
5
7
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
V
R
DD = 48 V
G = 4.7 Ω
ID = 12 A
VGS = 10 V
7
18
30
10
25
45
ns
ns
ns
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
12
48
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 12 A VGS = 0
SD = 12 A
VDD = 30 V
(see test circuit, figure 5)
1.5
V
trr
Reverse Recovery
Time
I
di/dt = 100 A/µs
70
0.21
6
ns
o
Tj = 150 C
Qrr
Reverse Recovery
Charge
µC
IRRM
Reverse Recovery
Current
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/10
STD12NE06
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/10
STD12NE06
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
STD12NE06
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
6/10
STD12NE06
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
7/10
STD12NE06
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
8/10
STD12NE06
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL "A"
D
L2
DETAIL "A"
L4
0068772-B
9/10
STD12NE06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
.
10/10
相关型号：
STD12NF06LAG
Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPAK package
STMICROELECTR
STD12NM50N
N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh⑩ Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明