STD12NF06LAG [STMICROELECTRONICS]
Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPAK package;
| 型号： | STD12NF06LAG |
| 厂家： | 
ST |
| 描述： | Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPAK package |
| 文件： | 总10页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD12NF06
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK
STripFET™ II POWER MOSFET
V
R
I
D
TYPE
DSS
DS(on)
STD12NF06
60 V
<0.1 Ω
12 A
■
■
■
■
TYPICAL R (on) = 0.08Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE
3
3
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
2
1
1
■
IPAK
DPAK
TO-252
(Suffix “T4”)
TO-251
(Suffix “-1”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
INTERNAL SCHEMATIC DIAGRAM
steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
■
■
■
■
■
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL , AUDIO AMPLIFIERS
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
60
Unit
V
V
Drain-source Voltage (V = 0)
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
60
V
DGR
GS
V
Gate- source Voltage
± 20
12
V
GS
I
Drain Current (continuos) at T = 25°C
A
D
C
I
Drain Current (continuos) at T = 100°C
8.5
48
A
D
C
I
(•)
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
30
W
tot
C
Derating Factor
0.2
15
W/°C
V/ns
mJ
(1)
(2)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
dv/dt
E
140
AS
T
stg
-55 to 175
°C
T
Max. Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(1) I ≤12A, di/dt ≤200A/µs, V ≤ V
, T ≤ T
SD
DD
(BR)DSS j JMAX
o
(2) Starting T = 25 C, I = 6A, V = 30V
j
D
DD
December 2001
1/10
.
STD12NF06
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
5
100
275
°C/W
°C/W
°C
T
l
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
60
V
V
D
GS
(BR)DSS
Breakdown Voltage
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
I
DSS
Drain Current (V = 0)
V
DS
= Max Rating T = 100°C
GS
C
Gate-body Leakage
V
GS
= ± 20 V
±100
nA
GSS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
V
V
= V
I
= 250 µA
I = 6 A
D
Gate Threshold Voltage
2
DS
GS
GS
D
= 10 V
Static Drain-source On
Resistance
0.08
0.1
Ω
R
DS(on)
DYNAMIC
Symbol
Parameter
Test Conditions
= 15 V = 6 A
Min.
Typ.
Max.
Unit
(*)
V
V
I
D
g
fs
Forward Transconductance
5
S
DS
DS
C
= 25V, f = 1 MHz, V = 0
GS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
315
70
30
pF
pF
pF
iss
C
oss
C
rss
2/10
STD12NF06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 30 V
Min.
Typ.
Max.
Unit
V
R
I
= 6 A
D
Turn-on Delay Time
Rise Time
7
18
ns
ns
t
DD
d(on)
= 4.7 Ω
V
= 10 V
GS
t
r
G
(Resistive Load, Figure 3)
Q
V
= 48V I = 12A V = 10V
D GS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
10
3.0
3.5
12
nC
nC
nC
g
DD
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 30 V = 6 A
Min.
Min.
Typ.
Max.
Unit
V
R
I
Turn-off Delay Time
Fall Time
17
6
ns
ns
t
DD
D
d(off)
= 4.7Ω,
V
GS
= 10 V
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
12
48
A
A
SD
( )
•
I
SDM
(*)
I
I
= 12 A
V
= 0
GS
V
Forward On Voltage
1.3
V
SD
SD
SD
t
rr
= 12 A
= 30 V
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
50
65
3.5
ns
µC
A
Q
V
T = 150°C
j
rr
DD
I
(see test circuit, Figure 5)
RRM
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
Thermal Impedance
Safe Operating Area
3/10
STD12NF06
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STD12NF06
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
5/10
STD12NF06
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STD12NF06
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
7/10
STD12NF06
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL "A"
D
L2
DETAIL "A"
L4
0068772-B
8/10
STD12NF06
*on sales type
9/10
STD12NF06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2001 STMicroelectronics - All Rights Reserved
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10/10
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