STD12NF06L [STMICROELECTRONICS]
N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER MOSFET; N沟道60V - 0.08欧姆 - 12A IPAK / DPAK STripFET⑩ II功率MOSFET
| 型号： | STD12NF06L |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER MOSFET |
| 文件： | 总10页 (文件大小：446K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD12NF06L
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK
STripFET™ II POWER MOSFET
V
R
I
D
TYPE
DSS
DS(on)
STD12NF06L
60 V
< 0.1 Ω
12 A
■
■
■
■
■
TYPICAL R (on) = 0.08 Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE
3
3
LOW THRESHOLD DRIVE
2
1
1
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
IPAK
DPAK
TO-252
(Suffix “T4”)
■
TO-251
(Suffix “-1”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
INTERNAL SCHEMATIC DIAGRAM
steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
■
■
■
■
■
HIGH CURRENT, HIGH SWITCHING SPEED
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
60
Unit
V
V
Drain-source Voltage (V = 0)
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
60
V
DGR
GS
V
Gate- source Voltage
± 16
12
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
8.5
48
A
D
C
I
(•)
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
30
W
tot
C
Derating Factor
0.2
15
W/°C
V/ns
mJ
(1)
(2)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
dv/dt
E
100
AS
T
stg
-55 to 175
°C
T
Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(1) I ≤12A, di/dt ≤200A/µs, V =40V, T ≤ T
JMAX
SD
DD
j
o
(2) Starting T = 25 C, I = 6A, V = 30V
j
AR
DD
June 2003
1/10
.
STD12NF06L
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
5
100
275
°C/W
°C/W
°C
T
l
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
60
V
V
D
GS
(BR)DSS
Breakdown Voltage
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
I
DSS
Drain Current (V = 0)
V
DS
= Max Rating T = 100°C
GS
C
Gate-body Leakage
V
GS
= ± 16 V
±100
nA
GSS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
V
= V
I
= 250 µA
Gate Threshold Voltage
1
2
V
DS
GS
D
V
V
= 10 V
= 5 V
I
I
= 6 A
= 6 A
Static Drain-source On
Resistance
0.08
0.10
0.10
0.12
Ω
Ω
GS
D
D
R
DS(on)
GS
DYNAMIC
Symbol
(*)
Parameter
Test Conditions
=25 V = 6 A
Min.
Typ.
Max.
Unit
Forward Transconductance
7
S
g
fs
V
V
I
D
DS
DS
= 25V, f = 1 MHz, V = 0
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
350
75
30
pF
pF
pF
GS
iss
C
oss
C
rss
2/10
STD12NF06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 30 V
Min.
Typ.
Max.
Unit
V
R
I
= 6 A
D
Turn-on Delay Time
Rise Time
10
35
ns
ns
t
DD
d(on)
= 4.7 Ω
V
GS
= 4.5 V
t
r
G
(Resistive Load, Figure 3)
Q
V = 48 V I = 12 A V = 5V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
7.5
2.5
3.0
10
nC
nC
nC
g
DD
D
GS
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 30 V
Min.
Min.
Typ.
Max.
Unit
V
R
I
= 6 A
D
Turn-off Delay Time
Fall Time
20
13
ns
ns
t
DD
d(off)
= 4.7 Ω
V
GS
= 4.5 V
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
12
48
A
A
SD
( )
•
I
SDM
(*)
I
I
= 12 A
V
= 0
GS
V
Forward On Voltage
1.5
V
SD
SD
SD
t
rr
= 12 A
= 16 V
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
50
67
2.5
ns
nC
A
Q
V
T = 150°C
j
rr
DD
I
(see test circuit, Figure 5)
RRM
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
Thermal Impedance
Safe Operating Area
3/10
STD12NF06L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STD12NF06L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
.
5/10
STD12NF06L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STD12NF06L
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
7/10
STD12NF06L
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL "A"
D
L2
DETAIL "A"
L4
0068772-B
8/10
STD12NF06L
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8 13.2 0.504 0.520
20.2 0.795
16.4 18.4 0.645 0.724
50 1.968
0.059
22.4
0.881
BASE QTY
BULK QTY
TAPE MECHANICAL DATA
1000
1000
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
*on sales type
9/10
STD12NF06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics - All Rights Reserved
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10/10
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