STB50NE10_06 [STMICROELECTRONICS]

N-channel 100V - 0.021ヘ - 50A - D2PAK STripFET⑩ Power MOSFET; N沟道100V - 0.021ヘ - 50A - D2PAK STripFET⑩功率MOSFET


型号：	STB50NE10_06
厂家：	ST
描述：	N-channel 100V - 0.021ヘ - 50A - D2PAK STripFET⑩ Power MOSFET N沟道100V - 0.021ヘ - 50A - D2PAK STripFET⑩功率MOSFET
文件：	总13页 (文件大小：413K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STB50NE10

N-channel 100V - 0.021Ω - 50A - D²PAK

STripFET™ Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

STB50NE10

100V

<0.027Ω

50A

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Low gate charge at 100 °C

■ Application oriented characterization

D²PAK

Description

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a

Internal schematic diagram

remarkable manufacturing reproducibility.

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STB50NE10T4

B50NE10

D²PAK

Tape & reel

June 2006

Rev 5

1/13

www.st.com

Contents

STB50NE10

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13

STB50NE10

Electrical ratings

Table 1.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

V_DS

V_DGR

V_GS

I_D

Drain-source voltage (V_GS= 0)

Drain-gate voltage (R_GS= 20 kΩ)

Gate- source voltage

100

Drain current (continuous) at T_C= 25°C

Drain current (continuous) at T_C= 100°C

Drain current (pulsed)

I_D

(1)

I_DM

200

180

1.2

P_tot

Total dissipation at T_C= 25°C

Derating Factor

W/°C

V/ns

dv/dt

T_stg

T_j

Peak diode recovery voltage slope

Storage temperature

-65 to 175

°C

Max. operating junction temperature

1. Pulse width limited by safe operating area.

Table 2.

Thermal data

Rthj-case Thermal resistance junction-case max

0.83

62.5

0.5

°C/W

°C

Rthj-amb Thermal resistance junction-ambient max

Rthj-sink

T_J

Thermal resistance case-sink max

Maximum lead temperature for soldering purpose

300

Table 3.

Avalanche characteristics

Parameter

Symbol

Max value

Unit

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

I_AR

Single pulse avalanche energy

E_AS

300

(starting Tj = 25 °C, I_D= I_AR, V_DD= 50 V)

3/13

Electrical characteristics

STB50NE10

Electrical characteristics

=25°C unless otherwise specified)

CASE

Table 4.

Symbol

On/off states

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source

V_(BR)DSS

I_D= 250µA, V_GS=0

100

breakdown voltage

_DS= Max rating

Zero gate voltage

µA

I_DSS

V_DS= Max rating,

T_C= 125°C

drain current (V_GS= 0)

Gate-body leakage

current (V_DS= 0)

I_GSS

V_GS

V_DS= V_GS, I_D= 250µA

_GS= 10V, I_D= 25A

20V

100

V_GS(th)

R_DS(on)

Gate threshold voltage

Static drain-source on

resistance

0.021

0.027

Ω

Table 5.

Symbol

Dynamic

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Forward

transconductance

V_DS=V_DS>I_D(on)xR_DS(on)

_max,I_D= 20A

(1)

g_fs

Input capacitance

Output capacitance

C_iss

C_oss

C_rss

4350

500

6000

V_DS= 25V, f = 1MHz,

V_GS= 0

Reverse transfer

capacitance

175

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Rise time

100

V_DD= 50V, I_D= 25A

R_G= 4.7Ω V_GS= 10V

(see Figure 12)

Turn-off delay time

Fall time

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

V_DD= 80V, I_D= 50A,

V_GS= 10V, R_G= 4.7Ω

(see Figure 13)

123

166

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

4/13

STB50NE10

Electrical characteristics

Table 6.

Symbol

Source drain diode

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

I_SD

Source-drain current

(pulsed)

(1)

I_SDM

200

(2)

V_SD

Forward on voltage

I_SD= 50A, V_GS= 0

1.5

t_rr

Reverse recovery time

I_SD= 50A, di/dt = 100A/µs,

155

815

10.5

Q_rr

Reverse recovery charge V_DD= 30V, T_j= 150°C

I_RRM

Reverse recovery current (see Figure 14)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

5/13

Electrical characteristics

STB50NE10

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

Figure 2. Thermal impedance

Figure 3. Output characterisics

Figure 4. Transfer characteristics

Figure 5. Transconductance

Figure 6. Static drain-source on resistance

6/13

STB50NE10

Electrical characteristics

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs

vs temperature

temperature

Figure 11. Source-drain diode forward

characteristics

7/13

Test circuit

STB50NE10

Test circuit

Figure 12. Switching times test circuit for

resistive load

Figure 13. Gate charge test circuit

Figure 14. Test circuit for inductive load

switching and diode recovery times

Figure 15. Unclamped Inductive load test

circuit

Figure 16. Unclamped inductive waveform

Figure 17. Switching time waveform

8/13

STB50NE10

Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com

9/13

Package mechanical data

STB50NE10

D²PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

mm.

inch

TYP.

DIM.

MIN.

4.4

TYP

MAX.

4.6

MIN.

0.173

0.098

0.001

0.027

0.044

0.017

0.048

0.352

MAX.

0.181

0.106

0.009

0.036

0.067

0.023

0.053

0.368

2.49

0.03

0.7

2.69

0.23

0.93

1.7

1.14

0.45

1.23

8.95

0.6

1.36

9.35

0.315

0.334

10.4

0.393

8.5

4.88

5.28

15.85

1.4

0.192

0.590

0.050

0.055

0.094

0.208

0.625

0.055

0.068

0.126

1.27

1.4

1.75

3.2

2.4

0.4

0.015

0º

4º

10/13

STB50NE10

Packing mechanical data

D PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

MIN. MAX. MIN. MAX.

330 12.992

inch

DIM.

1.5

12.8

20.2

24.4

100

0.059

13.2 0.504 0.520

0795

26.4 0.960 1.039

3.937

30.4

1.197

BASE QTY

BULK QTY

1000

TAPE MECHANICAL DATA

1000

inch

DIM.

MIN. MAX. MIN. MAX.

10.5 10.7 0.413 0.421

15.7 15.9 0.618 0.626

1.5

1.6 0.059 0.063

1.59 1.61 0.062 0.063

1.65 1.85 0.065 0.073

11.4

4.8

3.9

11.9

1.9

11.6 0.449 0.456

5.0 0.189 0.197

4.1 0.153 0.161

12.1 0.468 0.476

2.1 0.075 0.082

1.574

0.25 0.35 0.0098 0.0137

23.7 24.3 0.933 0.956

* on sales type

11/13

Revision history

STB50NE10

Revision history

Table 7.

Date

Revision history

Revision

Changes

21-Jun-2004

26-Jun-2006

Complete version

New template, no content change

12/13

STB50NE10

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