STB14NF10 [STMICROELECTRONICS]
N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET; N沟道100V - 0.115欧姆 - 15A TO- 220 / TO- 220FP / D2PAK低栅电荷STripFET⑩ II功率MOSFET![STB14NF10](http://pdffile.icpdf.com/pdf1/p00034/img/icpdf/STB14_176957_icpdf.jpg)
型号: | STB14NF10 |
厂家: | ![]() |
描述: | N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
文件: | 总11页 (文件大小:466K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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STB14NF10
STP14NF10 STP14NF10FP
2
N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
V
R
I
D
TYPE
DSS
DS(on)
STB14NF10
STP14NF10
STP14NF10FP
100 V
100 V
100 V
<0.13 Ω
<0.13 Ω
<0.13 Ω
15 A
15 A
10 A
■
■
■
■
TYPICAL R (on) = 0.115 Ω
DS
3
3
1
2
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
1
2
D PAK
TO-263
TO-220FP
APPLICATION ORIENTED
CHARACTERIZATION
(Suffix “T4”)
2
■
SURFACE-MOUNTING D PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
2
1
TO-220
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been de-
signed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended for
any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH-EFFICIENCY DC-DC CONVERTERS
■
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STB14NF10
STP14NF10FP
STP14NF10
V
Drain-source Voltage (V = 0)
100
100
± 20
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
GS
Gate- source Voltage
V
I
Drain Current (continuous) at T = 25°C
15
10
60
60
0.4
10
6.3
40
A
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
(•)
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
25
W
tot
C
Derating Factor
0.17
W/°C
V/ns
mJ
V
(1)
(2)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
9
dv/dt
E
70
AS
V
ISO
------
2000
T
stg
-55 to 175
°C
T
Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(1) I ≤14A, di/dt ≤300A/µs, V ≤ V
, T ≤ T
SD
DD
(BR)DSS j JMAX
o
(2) Starting T = 25 C, I = 15A, V = 50V
j
D
DD
June 2002
1/11
.
STB14NF10 STP14NF10 STP14NF10FP
THERMAL DATA
2
D PAK
TO-220FP
TO-220
Rthj-case
Thermal Resistance Junction-case
Max
2.5
6
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
62.5
300
°C/W
°C
T
l
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
D
GS
V
100
V
(BR)DSS
Breakdown Voltage
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
DSS
Drain Current (V = 0)
V
DS
= Max Rating T = 125°C
GS
C
Gate-body Leakage
V
GS
= ± 20 V
±100
nA
I
GSS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
V
V
= V
I
= 250 µA
D
Gate Threshold Voltage
2
DS
GS
GS
= 10 V
I
= 7 A
Static Drain-source On
Resistance
0.115
0.13
Ω
R
D
DS(on)
DYNAMIC
Symbol
Parameter
Test Conditions
= 15 V = 7 A
Min.
Typ.
Max.
Unit
(*)
V
V
I
D
g
fs
Forward Transconductance
20
S
DS
DS
C
= 25V, f = 1 MHz, V = 0
GS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
460
70
30
pF
pF
pF
iss
C
oss
C
rss
2/11
STB14NF10 STP14NF10 STP14NF10FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 50 V = 7 A
Min.
Typ.
Max.
Unit
V
R
I
D
Turn-on Delay Time
Rise Time
16
25
ns
ns
t
DD
d(on)
= 4.7 Ω
V
= 10 V
GS
t
r
G
(Resistive Load, Figure 3)
Q
V
= 80 V I = 12 A V = 10V
D GS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
15.5
3.7
4.7
21
nC
nC
nC
g
DD
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 50 V = 7 A
Min.
Min.
Typ.
Max.
Unit
V
R
I
D
Turn-off Delay Time
Fall Time
32
8
ns
ns
t
DD
d(off)
= 4.7Ω,
V
= 10 V
GS
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
15
60
A
A
SD
( )
•
I
SDM
(*)
I
I
= 14 A
V
= 0
GS
V
Forward On Voltage
1.5
V
SD
SD
SD
t
= 14 A
= 50 V
di/dt = 100A/µs
T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
90
230
5
ns
nC
A
rr
Q
V
rr
DD
j
I
(see test circuit, Figure 5)
RRM
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/11
STB14NF10 STP14NF10 STP14NF10FP
Thermal Impedance
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/11
STB14NF10 STP14NF10 STP14NF10FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
5/11
STB14NF10 STP14NF10 STP14NF10FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11
STB14NF10 STP14NF10 STP14NF10FP
D PAK MECHANICAL DATA
mm.
2
inch.
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.001
0.028
0.045
0.018
0.048
0.352
TYP.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.21
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
8.5
4.88
15
10.4
0.394
0.409
E1
G
5.28
15.85
1.4
0.192
0.591
0.050
0.055
0.094
0.208
0.624
0.055
0.069
0.126
L
L2
L3
M
1.27
1.4
2.4
1.75
3.2
R
0.4
0.016
V2
0°
8°
0°
8°
7/11
STB14NF10 STP14NF10 STP14NF10FP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/11
STB14NF10 STP14NF10 STP14NF10FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
9/11
STB14NF10 STP14NF10 STP14NF10FP
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
inch
MAX.
DIM.
MIN.
MAX.
MIN.
A
B
C
D
G
N
T
330
12.992
0.520
1.039
1.197
1.5
12.8
20.2
24.4
100
0.059
0.504
0.795
0.960
3.937
13.2
26.4
30.4
BASE QTY
BULK QTY
1000
1000
TAPE MECHANICAL DATA
mm
inch
DIM.
MIN.
10.5
15.7
1.5
MAX.
10.7
15.9
1.6
MIN.
0.413
0.618
0.059
0.062
0.065
0.449
0.189
0.153
0.468
0075
MAX.
0.421
0.626
0.063
0.063
0.073
0.456
0.197
0.161
0.476
0.082
A0
B0
D
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
50
1.574
T
0.25
23.7
0.35
24.3
.0.0098 0.0137
0.933 0.956
W
* on sales type
10/11
STB14NF10 STP14NF10 STP14NF10FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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