STB14NM65N [STMICROELECTRONICS]
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247; N沟道650 V, 0.33 Ω , 12一个的MDmesh II ™功率MOSFET TO- 220 , TO- 220FP , D2PAK , I2PAK , TO- 247型号: | STB14NM65N |
厂家: | ST |
描述: | N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247 |
文件: | 总18页 (文件大小:550K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STB14NM65N, STF14NM65N
STI14NM65N,STP14NM65N,STW14NM65N
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
VDSS
(@TJmax)
RDS(on)
max
Type
ID
3
2
3
1
2
STI14NM65N
STB14NM65N
STF14NM65N
STP14NM65N
STW14NM65N
710 V
710 V
710 V
710 V
710 V
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
12 A
12 A
12 A(1)
1
I²PAK
TO-220
3
1
12 A
D²PAK
12 A
3
2
3
1
2
1. Limited only by maximum temperature allowed
1
TO-220FP
TO-247
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Figure 1.
Internal schematic diagram
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
Table 1.
Order codes
STI14NM65N
Device summary
Marking
Package
Packaging
14NM65N
14NM65N
14NM65N
14NM65N
14NM65N
I²PAK
Tube
Tape and reel
Tube
STB14NM65N
STF14NM65N
STP14NM65N
STW14NM65N
D²PAK
TO-220FP
TO-220
Tube
TO-247
Tube
October 2008
Rev 2
1/18
www.st.com
18
Contents
STB/F/I/P/W14NM65N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/18
STB/F/I/P/W14NM65N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220, TO-247
D²PAK, I²PAK
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS=0)
650
V
V
Gate-source voltage
25
12(1)
A
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
12
7.6 (1)
A
ID
7.6
(2)
48(1)
A
Drain current (pulsed)
48
125
15
IDM
PTOT
dv/dt (3)
VISO
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
30
W
V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;TC=25 °C)
--
2500
V
Tstg
TJ
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220 I²PAK D²PAK TO-247 TO-220FP
Thermal resistance
junction-case max
Rthj-case
Rthj-amb
Rthj-pcb
1
4.2
62.5
--
°C/W
°C/W
°C/W
Thermal resistance
junction-amb max
62.5
--
50
--
Thermal resistance
junction-pcb max
--
--
30
Maximum lead
temperature for soldering
purposes
Tl
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
IAS
3
A
Single pulse avalanche energy
EAS
300
mJ
(starting TJ=25 °C, ID=IAS, VDD= 50 V)
3/18
Electrical characteristics
STB/F/I/P/W14NM65N
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS
ID = 1 mA, VGS = 0
650
V
breakdown voltage
V
DD = 520 V, ID=12 A,
dv/dt (1) Drain source voltage slope
30
V/ns
VGS=10 V
Zero gate voltage
IDSS
V
DS = Max rating
1
µA
µA
drain current (VGS = 0)
VDS = Max rating, @125 °C
100
Gate-body leakage
IGSS
VGS
VDS = VGS, ID = 250 µA
GS = 10 V, ID = 6 A
=
20 V
100
4
nA
V
current (VDS = 0)
VGS(th) Gate threshold voltage
2
3
Static drain-source on
resistance
RDS(on)
V
0.330 0.380
Ω
1. Characteristic value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance VDS=15 V I = 6A
10
S
, D
Input capacitance
Ciss
Coss
Crss
1300
90
pF
pF
pF
VDS = 50 V, f = 1 MHz,
VGS = 0
Output capacitance
Reverse transfer
capacitance
8
Equivalent output
capacitance
(2)
Coss eq
VGS = 0, VDS = 0 to 520 V
150
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 12 A,
VGS = 10 V,
45
7
nC
nC
nC
(see Figure 19)
25
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
STB/F/I/P/W14NM65N
Electrical characteristics
Min Typ Max Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
11
13
55
20
ns
ns
ns
ns
VDD =325 V, ID = 6 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Turn-off delay time
Fall time
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ Max Unit
ISD
Source-drain current
12
48
A
A
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 12 A, VGS = 0
1.3
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V
390
5
ns
µC
A
Qrr
IRRM
(see Figure 20)
25
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V, TJ = 150 °C
(see Figure 20)
530
7
ns
µC
A
Qrr
IRRM
25
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/18
Electrical characteristics
STB/F/I/P/W14NM65N
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK / I²PAK
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
6/18
STB/F/I/P/W14NM65N
Electrical characteristics
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
Figure 8. Output characteristics
Figure 9. Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
7/18
Electrical characteristics
STB/F/I/P/W14NM65N
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized B
vs temperature
VDSS
8/18
STB/F/I/P/W14NM65N
Test circuit
3
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped Inductive load test
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/18
Package mechanical data
STB/F/I/P/W14NM65N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/18
STB/F/I/P/W14NM65N
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/18
Package mechanical data
STB/F/I/P/W14NM65N
TO-220FP mechanical data
mm.
inch
DIM.
Min.
4.4
Typ.
Max.
4.6
2.7
2.75
0.7
1
Min.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
Typ.
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
12/18
STB/F/I/P/W14NM65N
Package mechanical data
TO-262 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
13/18
Package mechanical data
STB/F/I/P/W14NM65N
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.181
0.009
0.037
0.067
0.024
0.053
0.368
b2
c
c2
D
D1
E
10.40
0.409
E1
e
8.50
2.54
0.1
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.208
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.051
0.4
0.016
V2
0°
8°
0°
8°
0079457_M
14/18
STB/F/I/P/W14NM65N
Package mechanical data
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.85
5.15
2.20
1.0
2.60
1.40
2.40
3.40
b1
b2
c
2.0
3.0
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
15/18
Packaging mechanical data
STB/F/I/P/W14NM65N
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
16/18
STB/F/I/P/W14NM65N
Revision history
6
Revision history
Table 9.
Date
Document revision history
Revision
Changes
15-Feb-2008
14-Oct-2008
1
2
First release
Table 4: Avalanche characteristics has been corrected.
17/18
STB/F/I/P/W14NM65N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
18/18
相关型号:
©2020 ICPDF网 联系我们和版权申明