STB14NK60ZT4 [STMICROELECTRONICS]
N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET; N沟道600V - 0.45ohm - 13.5A TO- 220 / FP / D2PAK / I2PAK / TO- 247齐纳保护超网功率MOSFET
| 型号： | STB14NK60ZT4 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET |
| 文件： | 总17页 (文件大小：554K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP14NK60Z - STP14NK60ZFP
STB14NK60Z/-1 - STW14NK60Z
N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP14NK60Z
STP14NK60ZFP 600 V < 0.5 Ω 13.5 A
600 V < 0.5 Ω 13.5 A 160 W
40 W
STB14NK60Z
STB14NK60Z-1
STW14NK60Z
600 V < 0.5 Ω 13.5 A 160 W
600 V < 0.5 Ω 13.5 A 160 W
600 V < 0.5 Ω 13.5 A 160 W
3
3
2
1
2
1
TO-220
TO-220P
■ TYPICAL R (on) = 0.45 Ω
DS
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
3
2
1
TO-247
3
2
3
1
1
I²PAK
D²PAK
DESCRIPTION
Figure 2: Internal Schematic Diagram
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
Table 2: Order Codes
Part Number
STP14NK60Z
Marking
P14NK60Z
P14NK60ZFP
B14NK60Z
B14NK60Z
W14NK60Z
Package
TO-220
TO-220FP
D²PAK
Packaging
TUBE
STP14NK60ZFP
STB14NK60ZT4
STB14NK60Z-1
STW14NK60Z
TUBE
TAPE & REEL
TUBE
I²PAK
TO-247
TUBE
Rev. 4
September 2005
1/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
TO-220/D²PAK/I²PAK
TO-220FP
TO-247
V
Drain-source Voltage (V = 0)
600
600
± 30
V
V
DS
GS
V
DGR
Drain-gate Voltage (R
Gate-source Voltage
= 20 kΩ)
GS
V
V
GS
I
Drain Current (continuous) at T = 25°C
13.5
8.5
13.5 (*)
8.5 (*)
54 (*)
40
A
D
C
I
D
Drain Current (continuous) at T = 100°C
A
C
I
( )
Drain Current (pulsed)
54
A
DM
P
Total Dissipation at T = 25°C
160
1.28
W
TOT
C
Derating Factor
0.32
W/°C
V
V
Gate source ESD (HBM-C= 100pF, R= 1.5kΩ)
4000
4.5
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope
V/ns
V
V
Insulation Winthstand Voltage (DC)
--
2500
ISO
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤ 13.5A, di/dt ≤ 200 A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/D²PAK/I²PAK
TO-247
TO-220FP
Unit
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
0.78
62.5
3.1
50
°C/W
°C/W
°C
T
300
Maximum Lead Temperature For Soldering Purpose
l
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
12
A
AR
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
300
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
Table 6: Gate-Source Zener Diode
Symbol
BV
Parameter
Test Conditions
= ± 1 mA (Open Drain)
gs
Min.
Typ.
Max.
Unit
Gate source Breakdown
Voltage
I
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 1mA, V = 0
600
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 30V
±10
µA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 100 µA
Gate Threshold Voltage
3
3.75
0.45
4.5
0.5
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 6 A
Ω
DS(on)
GS
D
Table 8: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
V
V
= 15 V I = 6 A
11
S
Forward Transconductance
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25V, f = 1 MHz, V = 0
2220
240
57
pF
pF
pF
iss
DS
GS
oss
rss
C
(3)
V
V
= 0V, V = 0V to 480V
122
Equivalent Output Capacitance
pF
oss eq.
GS
DS
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
= 300 V, I = 6 A,
26
18
62
13
ns
ns
ns
ns
d(on)
DD
D
t
r
R = 4.7 Ω, V = 10 V
(Resistive Load see, Figure 21)
G GS
t
d(off)
t
f
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 480V, I = 12 A,
= 10V
75
13.2
38.6
nC
nC
nC
g
DD
D
Q
gs
gd
GS
Q
(see, Figure 24)
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
12
48
A
A
SD
(2)
I
SDM
V
(1)
I
I
= 12 A, V
= 0
GS
Forward On Voltage
1.6
V
SD
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 12 A, di/dt = 100 A/µs
= 50 V, T = 25°C
490
4.7
19.3
ns
µC
A
SD
Q
V
DD
rr
j
I
(see test circuit, Figure 22)
RRM
t
Q
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
V
= 12 A, di/dt = 100 A/µs
= 50 V, T = 150°C
DD j
664
6.8
20.5
ns
µC
A
rr
SD
rr
I
(see test circuit, Figure 22)
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
oss eq.
3/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Figure 3: .Safe Operating Area For TO-220/
D²PAK/I²PAK
Figure 6: Thermal Impedance For TO-220/
D²PAK/I²PAK
Figure 4: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 5: Safe Operating Area For TO-247
Figure 8: Thermal Impedance For TO-247
4/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Figure 9: Output Characteristics
Figure 12: Transfer Characteristics
Figure 13: Static Drain-source On Resistance
Figure 14: Capacitance Variations
Figure 10: Transconductance
Figure 11: Gate Charge vs Gate-source Voltage
5/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Figure 15: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 18: Normalized On Resistance vs Tem-
perature
Figure 16: Source-Drain Forward Characteris-
tics
Figure 19: Normalized BV
vs Temperature
DSS
Figure 17: Maximum Avalanche Energy vs
Temperature
6/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Figure 20: Unclamped Inductive Load Test Cir-
cuit
Figure 23: Unclamped Inductive Wafeform
Figure 21: Switching Times Test Circuit For
Resistive Load
Figure 24: Gate Charge Test Circuit
Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is
an ST trademark. ECOPACK specifications are available at: www.st.com
8/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
9/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
10/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
11/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
12/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
13/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-262 (I2PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
14/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TO-262 (I2PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
15/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Table 10: Revision History
Date
Revision
Description of Changes
26-Aug-2004
06-Sep-2005
4
5
New stylesheet
Inserted Ecopack indication
16/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
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17/17
相关型号：
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