SD1563 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS; 射频与微波晶体管超高频脉冲应用
| 型号： | SD1563 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS |
| 文件： | 总7页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD1563
RF & MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
.
.
350 WATTS @ 10µSEC PULSE WIDTH,
10% DUTY CYCLE
300 WATTS @ 250µSEC PULSE WIDTH,
10% DUTY CYCLE
.
.
.
9.5 dB MIN. GAIN
REFRACTORY GOLD METALLIZATION
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
INFINITE VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.400 x .400 2LFL (M106)
hermetically sealed
ORDER CODE
BRANDING
SD1563
.
SD1563
PIN CONNECTION
DESCRIPTION
The SD1563 is a gold metallized silicon NPN pulse
power transistor. The SD1563 is designed for ap-
plications requiring high peak power and low duty
cycles within the frequency range of 400 - 500
MHz.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCES
VEBO
IC
Parameter
Value
65
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
65
V
3.5
V
21.6
875
+200
A
PDISS
TJ
Power Dissipation
W
°
°
Junction Temperature
Storage Temperature
C
C
TSTG
65 to +150
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
0.2
°C/W
1/7
September 7, 1994
SD1563
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO IC = 50 mA
IE = 0 mA
VBE = 0 V
IB = 0 mA
IC = 0 mA
IE = 0 mA
IC = 5 A
65
65
28
3.5
—
—
—
—
—
—
—
V
V
BVCES
IC = 50 mA
—
BVCEO IC = 50 mA
—
V
BVEBO
ICES
IE = 10 mA
VCE = 30 V
VCE = 5 V
—
V
7.5
100
mA
—
hFE
10
DYNAMIC
Value
Symbol
Test Conditions
Unit
Min.
300
9.5
55
Typ. Max.
POUT
PG
f = 425 MHz
f = 425 MHz
f = 425 MHz
PIN = 33.5 W
POUT = 300 W
PIN = 25 W
VCE = 40 V
VCE = 40 V
VCE = 40 V
—
—
—
—
—
—
W
dB
%
η
c
Note:
Pulse Width
250 Sec, Duty Cyle
10%
µ
=
=
TYPICAL PERFORMANCE
POUT (W)
360
P.W. (µSec)
D.C. (%)
TJ (°C max.)
VCC
40
40
40
40
40
10
20
10
10
10
10
10
150
150
150
150
150
350
325
100
500
1000
310
300
2/7
SD1563
TYPICAL PERFORMANCE (P.W. = 120µSec)
POWER GAIN vs FREQUENCY
POWER OUTPUT vs POWER INPUT
EFFICIENCY vs POWER INPUT
POWER OUTPUT vs COLLECTOR VOLTAGE
3/7
SD1563
TYPICAL PERFORMANCE (P.W. = 120µSec)
EFFICIENCY vs FREQUENCY
EFFICIENCY vs COLLECTOR VOLTAGE
IMPEDANCE DATA (P.W. = 120µSec)
TYPICAL COLLECTOR LOAD IMPEDANCE
TYPICAL INPUT IMPEDANCE
4/7
SD1563
TYPICAL PERFORMANCE (P.W. = 250µSec)
EFFICIENCY vs FREQUENCY
POWER GAIN vs FREQUENCY
THERMAL RESISTANCE vs PULSE
WIDTH
POWER OUTPUT vs FLANGE
T @ CONSTANT 125°C
J
5/7
SD1563
IMPEDANCE DATA (P.W. = 250µSec)
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD IMPEDANCE
6/7
SD1563
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0106 rev. B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
7/7
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