SD1565 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS; 射频与微波晶体管超高频脉冲应用型号: | SD1565 |
厂家: | ST |
描述: | RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS |
文件: | 总6页 (文件大小:109K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SD1565
RF & MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
.
500 WATTS @ 250µSec PULSE WIDTH,
10% DUTY CYCLE
REFRACTORY GOLD METALLIZATION
.
.
EMITTER BALLASTING AND LOW
RESISTANCE FOR RELIABILITY AND
RUGGEDNESS
.
.
.
INFINITE VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.400 x .500 4LFL (M102)
hermetically sealed
INPUT MATCHED, COMMON BASE
CONFIGURATION
BALANCED CONFIGURATION
ORDER CODE
BRANDING
SD1565
SD1565
PIN CONNECTION
DESCRIPTION
The SD1565 is a hermetically sealed, gold met-
allized silicon NPN pulse power transistor mounted
in a common base balanced configuration. The
SD1565 is designed for applications requiring high
peak power and low duty cycles within the fre-
quency range of 400 - 500 MHz.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCES
VEBO
IC
Parameter
Value
65
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
65
V
3.5
V
43.2
1167
+200
A
PDISS
TJ
Power Dissipation
W
°
°
Junction Temperature
Storage Temperature
C
C
TSTG
65 to +200
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
0.15
°C/W
1/6
July 19, 1994
SD1565
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
BVCBO IC = 50 mA
IE = 0 mA
VBE = 0 V
IC = 0 mA
IE = 0 mA
IC = 5 A
65
65
3.5
—
—
—
—
—
—
—
V
V
BVCES
BVEBO
ICES
IC = 50 mA
IE = 10 mA
VCE = 30 V
VCE = 5 V
—
—
V
15
mA
—
hFE
20
200
DYNAMIC
Value
Symbol
Test Conditions
Unit
Min.
500
9.7
50
Typ. Max.
POUT
PG
f = 425 MHz
f = 425 MHz
f = 425 MHz
PIN = 54 W
PIN = 54 W
PIN = 54 W
VCE = 40 V
VCE = 40 V
VCE = 40 V
—
—
—
—
—
—
W
dB
%
η
c
Note:
Pulse Width
250 Sec, Duty Cycle
10%
µ
=
=
This device is suitable for use under other pulse width/duty cycle conditions.
Please contact the factory for specific applications assistance.
TYPICAL PERFORMANCE (P.W. = 250µS, D.C. = 10%)
POWER OUTPUT vs POWER INPUT
POWER GAIN vs FREQUENCY
2/6
SD1565
TYPICAL PERFORMANCE (P.W. = 250µS, D.C. = 10%)
EFFICIENCY vs POWER INPUT
EFFICIENCY vs FREQUENCY
IMPEDANCE DATA (P.W. = 250µS, D.C. = 10%)
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD
IMPEDANCE
3/6
SD1565
TYPICAL PERFORMANCE (P.W. = 60µS, D.C. = 2%)
POWER GAIN vs FREQUENCY
POWER OUTPUT vs POWER INPUT
EFFICIENCY vs FREQUENCY
EFFICIENCY vs POWER INPUT
4/6
SD1565
IMPEDANCE DATA (P.W. = 60µS, D.C. = 2%)
TYPICAL COLLECTOR LOAD
IMPEDANCE
TYPICAL INPUT IMPEDANCE
TEST CIRCUIT
L1, L2
L3, L4
:
:
1” PC #18 Tinned Wire (mounted flat to PC Board)
2T #18 Tinned Wire, 0.25” I.D.
C3, C5
C4, C8
C6
C7
C9
:
:
:
:
:
:
8pF 50 mil square
.4 - 4.5pF Johanson JMC #27273
39pF 50mil square
39pF Chip Capacitor
20pF Chip Capacitor
12pF Chip Capacitor
Baluns are 4.8” UT-141 Coax, Spaced to fit from coax
connectors to the 25 Ohm lines.
C10
Note: 3M Epsilom 6 PC Board .030” Thick
C12, C15 : .1µF
C13, C16 : 1000pF Chip Capacitor
C14, C17 : 1000µF
5/6
SD1565
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0102 rev. F
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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6/6
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