SD1579 [SILAN]
Hall IC Fan Motor Driver; 霍尔IC风扇电机驱动器
| 型号： | SD1579 |
| 厂家： | 
SILAN MICROELECTRONICS JOINT-STOCK |
| 描述： | Hall IC Fan Motor Driver |
| 文件： | 总7页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hall IC Fan Motor Driver
DESCRIPTION
SD1579 is a one•chip, two phase Hall IC fan driver usethe advanced
BICDMOS process.Power output stage using LDMOS transistors, with
low Rdson, low power dissipation and capable of withstianngd high
output drive current.
The driver of the motor circuit built•in Lockerdo•tor protection circuit,
with automatic restart function. Builti•n voltage regulator circuit for the
Hall sensor and amplifier circuit to provide internal power supply;
The dynamic compensation circuit capable of progvoidoidng
consistency and very small magnetic shift of the window over the whole
temperature range,.
TO • 94
Built•in Zener output as the output protection management andin the
supply•side built•in reverse protection diodes, which can effeelcytiv
prevent damage when the power supply circuit is reverse.
APPLICATIONS
* Dual coils brush•less DC fan;
* Dual coils brush•less DC motor.
FEATURES
* Built•in lock protection circuit;
* Built•in Auto restart circuit;
* Built•in Hall sensor with high stability of the dynamic compensation
circuit;
* Built•in Hall amplifier with hysteresis;
* Built•in Zener Diodes protect outputs circuit;
* Built•in Voltage Regulator circuit.
* Built•in Reverse•voltage protection diode
* Hall magnetic window, consistency and temperature stability;
* Wide operating voltage range, small quiescent current;
* Low Rdson, high drive current capability;
ORDERING INFORMATION
Part No.
Package
Marking
Material
Package Type
SD1579
TO•94
1579
Pb free
Bulk
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.11.11
Page 1 of 7
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Characteristics
Symbol
V max
CC
Ratings
30
Unit
V
V
CC
Maximum Supply Voltage
I
500
mA
mA
mW
°C
out(AVE)
Maximum Output Current (Fault)
I
700
out(PEAK)
Power Dissipation
Pd
550
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
T
amb
•40 ~ 125
•55 ~ 150
150
T
stg
°C
T
j
°C
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute•maximum•rated
conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS (Unless specified particularly Tamb=25°C, VCC=12V)
Characteristics
Supply Voltage
Symbol
Test Conditions
Operating
Min.
Typ.
12
Max.
28*
Unit
V
V
CC
~
~
~
~
Supply Current
I
Operating
2.0
210
350
227
0.5
3
4.0
mA
mV
mV
°C /W
S
CC
Output Saturation voltage
Output Saturation voltage
Thermal Resistance
V
DSS
V
DSS
I
I
=300 mA
=500 mA
300
500
out
out
R
Operating
th
on
off
Locked•Rotor Period
t
Locked•Rotor Period
t
S
Output Zener•breakdown Voltage
Vz
35
42
60
V
*Note: Please used in power dissipation limitation for all coil with different efficiency.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.11.11
Page 2 of 7
MAGNETIC CHARACTERISTICS (Unless specified particularly Tamb=25°C, VCC=12V, 1mT=10Gauss)
Characteristics
Operate Point
Symbol
Bop
Test Conditions
Operating
Min.
10
Typ.
30
Max.
60
Unit
GS
GS
GS
Release Point
Hysteresis
BRP
Operating
•60
~
•30
60
•10
~
BHYS
Operating
When flux B is over operation point Bop, Do is on and output low voltage, DOB is off and output high voltage.
Every output is locking until the flux B is less than release point Brp, then DO and DOB switch the states.
PIN CONFIGURATION
PIN DESCRIPTION
Pin No.
Pin Name
VDD
I/O
••
Description
1
2
3
4
Power supply
Driver Output pin
Driver Output pin
Ground
DO
O
DOB
O
GND
••
HALL SENSOR LOCATION
Value
Unit
mm
mm
2.3
X
Y
1.09
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.11.11
Page 3 of 7
FUNCTION DESCRIPTION
This IC detects the rotation of the motor by hall signal, and adjusts lock detection ON time (T ON) =0.5S and lock
detection OFF time (TOFF)=3.0S by internal counter. The time (TNO, TOFF) sequence is shown below.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.11.11
Page 4 of 7
TEST CIRCUIT
TYPICAL APPLICATION CIRCUIT
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.11.11
Page 5 of 7
APPLICATION INFORMATION
1.
Back electromotive force causes regenerated current toDDVline, therefore take a measure such as placing
a capacitor between power supply and GND for routing regenerated current; In order to reduce the output
DO and DOB side effects of induced electromotive force, need to increase a resistance•capacitance
network at the output; in a typical application circuit diagram, R1 and R2 is typically 56 ohms; C1, C2 and
C3 is typically 2.2uF; The value of R and C must match the actual coil;
2.
3.
Figure 2 is the normal working state, the current compoCsCe aInd Iload , power dissipation PC = VDD * ICC
+ Vo * Iload , Where Vo is the output voltage when DO or DOB turn on; It is need to be careful not to exceed
its maximum power dissipation value dule to change of power supply voltage VDD and the coil current Iload.
SD1579 has built•in reverse protection diodes, so D1 is no need; If you increase the D1 can better protect
the chips, as shown in Figure 3; it should be noted that care should to taken to the two coils current when
power voltage reversed, if 2*Vo * Iload > IC's power consumption, it may cause damage to IC;
Fig.2 Normal working state
Fig.3 Reverse voltage state
4.
Add a diode to coils can better protect the chip and the fans at reverse voltage state, as shown in Figure 4;
Figure 4 Add a diode to coils
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.11.11
Page 6 of 7
PACKAGE OUTLINE
TO•94
UNIT: mm
MOS DEVICES OPERATE NOTES:
Electrostatic charges may exist in many things. Please take following preventive measures to prevent effectively
the MOS electric circuit as a result of the damage which is caused by discharge:
l
l
l
l
The operator must put on wrist strap which should be earthed to against electrostatic.
Equipment cases should be earthed.
All tools used during assembly, including soldering tools and solder baths, must be earthed.
MOS devices should be packed in antistatic/conductive containers for transportation.
Disclaimer:
·
Silan reserves the right to make changes to the information herein for the improvement of the design and performance
without further notice! Customers should obtain the latest relevant information before placing orders and should verify
that such information is complete and current.
·
·
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products
in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety
standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products
could cause loss of body injury or damage to property.
Silan will supply the best possible product for customers!
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.11.11
Page 7 of 7
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