EMIF01-10005W5 [STMICROELECTRONICS]
EMI FILTER INCLUDING ESD PROTECTION; EMI滤波器，它包括ESD保护
| 型号： | EMIF01-10005W5 |
| 厂家： | 
ST |
| 描述： | EMI FILTER INCLUDING ESD PROTECTION |
| 文件： | 总10页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMIF01-10005W5
®
EMI FILTER
INCLUDING ESD PROTECTION
Application Specific Discretes
A.S.D.TM
MAIN APPLICATIONS
Where EMI filtering in ESD sensitive equipment is required :
Computers and printers
Communication systems
Mobile phones
MCU Boards
DESCRIPTION
The EMIF01-10005W5 is a highly integrated array
designed to suppress EMI / RFI noise in all systems
subjected to electromagnetic interferences.
SOT323-5L
Additionally, this filter includes an ESD protection circuitry
which prevents the protected device from destruction when
subjected to ESD surges up to 15 kV.
FUNCTIONAL DIAGRAM
BENEFITS
I1
O1
O2
Cost-effectiveness compared to discrete solution
EMI bi-directional low-pass filter
High efficiency in ESD suppression.
High flexibility in the design of high density boards
Very low PCB space consuming : 4.2 mm2 typically
High reliability offered by monolithic integration
GND
I2
COMPLIES WITH THE FOLLOWING STANDARD:
R
I/O = 100Ω
IEC 1000-4-2
15kV
8 kV
(air discharge)
(contact discharge)
CIN = 50pF
ESD response to IEC1000-4-2 (16 kV air discharge)
Filtering response
dB
0
-10
-20
-30
f(MHz)
1
10
100
1000 2000
TM : ASD is trademark of STMicroelectronics.
May 1999 - Ed: 1
1/10
EMIF01-10005W5
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C)
Symbol
Parameter and test conditions
Value
Unit
VPP
ESD discharge IEC1000-4-2, air discharge
ESD discharge IEC1000-4-2, contact discharge
16
9
kV
Tj
Junction temperature
150
°C
°C
°C
°C
Top
Tstg
TL
Operating temperature range
Storage temperature range
-40 to + 85
-55 to +150
260
Lead solder temperature (10 second duration)
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
Symbol
VBR
IRM
Parameter
Breakdown voltage
I
Leakage current @ VRM
Stand-off voltage
VRM
VCL
VCL VBR VRM
Clamping voltage
V
IRM
IR
Rd
Dynamic impedance
Peak pulse current
IPP
slope : 1 / R
d
IPP
RI/O
Series resistance between Input
and Output
CIN
Input capacitance per line
Symbol
VBR
IRM
Test conditions
IR = 1 mA
Min.
Typ.
Max.
8
Unit
6
7
V
VRM = 3V
µ
A
1
Ω
RI/O
Rd
80
100
1
120
µ
Ω
Ipp = 10 A, tp = 2.5 s (see note 1)
CIN
at 0V bias
50
pF
Note 1 : to calculate the ESD residual voltage, please refer to the paragraph "ESD PROTECTION" on pages 4 & 5
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EMIF01-10005W5
TECHNICAL INFORMATION
FREQUENCY BEHAVIOR
The EMIF01-10005W5 is firstly designed as an EMI/RFI filter. This low-pass filter is characterized by the following
parameters:
- Cut-off frequency
- Insertion loss
- High frequency rejection
Fig A1: EMIF01-10005W5 frequency response curve.
dB
0
-10
-20
f(MHz)
-30
1
10
100
1000 2000
Figure A1 gives these parameters, in particular the signal rejection at the GSM frequency is about -24dB at 900MHz,
Fig A2: Measurement conditions
TRACKING GENERATOR
SPECTRUM ANALYSER
RF IN
TEST BOARD
SMA
SMA
50Ω
TG OUT
50Ω
Vg
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EMIF01-10005W5
ESD PROTECTION
In addition to its filtering function, the EMIF01-10005W5 is particularly optimized to perform ESD protection.
ESD protection is based on the use of device which clamps at :
VCL = VBR + Rd.IPP
This protection function is splitted in 2 stages. As shown in figure A3, the ESD strikes are clamped by the first stage S1 and
then its remaining overvoltage is applied to the second stage through the resistor R. Such a configuration makes the output
voltage very low at the Vout level.
Fig A3 : ESD clamping behavior
Rg
R
Rd
Rd
ESD
Surge
Vout
Vg
Rload
Vin
Vbr
Vbr
S2
S1
EMIF01-10005W5
Device to be protected
To have a good approximation of the remaining voltages at both Vin and Vout stages, we provide the typical dynamical
resistance value Rd. By taking into account these following hypothesis : R>>Rd, R >>Rd and Rload>>Rd, it gives these
G
formulas:
Rg Vbr+Rd Vg
.
.
Vin =
Rg
R Vbr+Rd Vin
.
.
Vout =
R
The results of the calculation done for V =8kV, R =330Ω (IEC1000-4-2 standard) and V =7V (typ.) give:
G
G
BR
Vin = 31.2 V
Vout = 7.3 V
This confirms the very low remaining voltage across the device to be protected. It is also important to note that in this
approximation the parasitic inductance effect was not taken into account. This could be few tenths of volts during few ns at
the Vin side. This parasitic effect is not present at the Vout side due the low current involved after the resistance R.
Fig A4 : Measurement conditions
ESD
SURGE
TEST BOARD
16kV
Air
Discharge
Vin
Vout
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EMIF01-10005W5
The measurements shown here after illustrate very clearly (Fig. A5a) the high efficiency of the ESD protection :
- no influence of the parasitic inductances on Vout stage
- Vout clamping voltage very close to VBR
Fig A5 : Remaining voltage at both stages S1 (Vin) and S2 (Vout) during ESD surge
a) Positive surge
b) Negative surge
Fig A6 : Rd measurement current wave
Please note that the EMIF01-10005W5 is not only acting
for positive ESD surges but also for negative ones. For
these kind of disturbances it clamps close to ground
voltage as shown in Fig. A5b.
I
I
PP
NOTE: DYNAMIC RESISTANCE MEASUREMENT
t
As the value of the dynamic resistance remains stable for
a surge duration lower than 20µs, the 2.5µs rectangular
surge is well adapted. In addition both rise and fall times
are optimized to avoid any parasitic phenomenon during
the measurement of Rd.
2 µs
2.5 µs
2.5µs duration measurement wave
5/10
EMIF01-10005W5
CROSSTALK BEHAVIOR
1- Crosstalk phenomena
Fig A7 : Crosstalk phenomena
RG1
line 1
line 2
VG1
RL1
β
α
VG1
VG2
RG2
VG2
RL2
α
β
VG1
VG2
DRIVERS
RECEIVERS
2- Digital Crosstalk
Fig A8 : Digital crosstalk measurement
+5V
+5V
74HC04
74HC04
Line 1
VG1
+5V
Square
Pulse
Generator
5KHz
Line 2
β21
VG1
Figure A8 shows the measurement circuit used to quantify the crosstalk effect in a classical digital application.
Figure A9 shows that in such a condition signal from 0 to 5V and rise time of 3 ns, the impact on the disturbed line is less
than 100mV peak to peak. No data disturbance was noted on the concerned line. The same results were obtained with
falling edges.
Fig A9 : Digital crosstalk results
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EMIF01-10005W5
3- Analog Crosstalk
Fig A10 : Analog crosstalk measurement
TRACKING GENERATOR
SPECTRUM ANALYSER
RF IN
TEST BOARD
SMA
SMA
50Ω
TG OUT
50Ω
Vg
Figure A10 gives the measurement circuit for the analog
application. In figure A11, the curve shows the effect of cell
I/O1 on cell I/O2. In usual frequency range of analog
signals (up to 100MHz) the effect on disturbed line is less
than -43 dB.
Fig A11 : Typical analog crosstalk result
dB
0
-20
-40
-60
-80
-100
1
10
100
1,000
F(MHz)
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EMIF01-10005W5
4 - PSpice model
Fig A12: PSpice model of one EMIF01 cell
Fig A13: PSpice parameters
Dz
7
25p
Df
1000
25p
Dr
1000
1p
BV
Cjo
IBV
IKF
IS
ISR
N
M
100u
1000
10E-15
100p
1
0.3333
1
0.6
100u
1000
1.016E-15
100p
1.0755
0.3333
1
100u
1000
10E-15
100p
0.6
0.3333
1m
0.6
RS
VJ
TT
0.6
50n
50n
1n
Note This model is available for an ambient temperature
of 27°C
Fig. A14: PSpice simulation : IEC 1000-4-2 Contact Discharge response
a) Positive surge b) Negative surge
(V)
(V)
60
50
40
30
20
10
0
0
-10
-20
-30
-40
-50
-60
Vin
Vin
Vout
Vout
0
20
40
60
80
100
0
20
40
60
80
100
t(ns)
t(ns)
Fig A15: Comparison between PSpice
simulation and measured frequency response
dB
0
Measured
PSpice
-10
-20
-30
1
10
100
1,000
F(MHz)
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EMIF01-10005W5
ORDER CODE
EMIF
01 - 100
05
W5
SOT323-5L package
Input capacitance value /10
EMI FILTER
TYPE
Series resistance value
Delivery
mode
Order code
Marking
Package
Weight
Base qty
EMIF01-10005W5
M12
SOT323-5L
5.4 mg
3000
Tape & reel
9/10
EMIF01-10005W5
PACKAGE MECHANICAL DATA
SOT323-5L
DIMENSIONS
Millimeters Inches
Min. Max. Min.
0.8 1.1
REF.
A
A2
Max.
0.043
0.004
0.039
0.012
0.007
0.086
0.053
A
A1
A2
b
0.031
0
A1
0
0.1
1
0.8
0.031
0.006
0.004
0.071
0.045
D
0.15
0.1
0.3
0.18
2.2
1.35
e
e
c
D
1.8
E
1.15
H
E
e
0.65 Typ.
H
1.8
0.1
2.4
0.4
0.071
0.004
0.094
0.016
Q1
Q1
c
b
RECOMMENDED FOOTPRINT
0.3mm
Mechanical specifications
Lead plating Tin-lead
1mm
µ
Lead plating thickness 5 m min.
µ
25 m max.
Lead material
Sn / Pb
(70% to 90% Sn)
29mm
µ
Lead coplanarity
Body material
Flammability
100 m max.
Molded epoxy
UL94V-0
1mm
0.35mm
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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