概述
规格参数
数据手册BUT70W 概述
HIGH POWER NPN TRANSISTOR 高功率NPN晶体管 功率双极晶体管
BUT70W 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Not Recommended |
| 包装说明： | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code： | not_compliant |
| ECCN代码： | EAR99 | Factory Lead Time： | 8 weeks |
| 风险等级： | 5.74 | 集电极-发射极最大电压： | 125 V |
| 配置： | SINGLE | JEDEC-95代码： | TO-247 |
| JESD-30 代码： | R-PSFM-T3 | JESD-609代码： | e3 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | FLANGE MOUNT |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | NPN |
| 最大功率耗散 (Abs)： | 200 W | 认证状态： | Not Qualified |
| 子类别： | Other Transistors | 表面贴装： | NO |
| 端子面层： | Tin (Sn) | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
BUT70W 数据手册
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®
HIGH POWER NPN TRANSISTOR
■
STMicroelectronics PREFERRED
SALESTYPE
■
■
■
■
NPN TRANSISTOR
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
VERY LOW SATURATION VOLTAGE AND
HIGH GAIN
APPLICATION
3
2
■
■
■
SWITCHING REGULATORS
MOTOR CONTROL
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
1
TO-247
DESCRIPTION
The BUT70W is a Multiepitaxial planar NPN
transistor in TO-247 plastic package.
It’s intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
Parameter
Collector-emitter Voltage (VBE = -1.5V)
Collector-emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Value
Unit
200
V
V
VCEO
125
VEBO
7
40
V
IE(RMS) Emitter Current
IEM Emitter Peak Current
IB
A
120
A
Base Current
8
A
IBM
Ptot
Tstg
Tj
Base Peak Current
24
A
o
200
W
oC
oC
Total Power Dissipation at Tcase < 25 C
Storage Temperature
-65 to 150
150
Max Operating Junction Temperature
1/4
February 2002
BUT70W
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.63
oC/W
(Tcase = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 5Ω)
VCE = 200 V
VCE = 200 V
1
5
mA
mA
TC = 100oC
TC = 100oC
ICEV
IEBO
Collector Cut-off
Current (VBE = -1.5V) VCE = 200 V
VCE = 200 V
1
4
mA
mA
Emitter Cut-off
Current (IC = 0)
VEB = 5 V
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A
L = 25 mH
125
7
V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 50 mA
V
VCE(sat)
VBE(sat)
dic/dt
Collector-Emitter
Saturation Voltage
IC = 70 A IB = 7 A
IC = 70 A IB = 7 A
IC = 35 A IB = 1.75 A
0.9
1.5
0.9
1.2
V
V
V
V
TC = 100oC
IC = 35 A IB = 1.75 A TC = 100oC
Base-Emitter
Saturation Voltage
IC = 70 A IB = 7 A
IC = 70 A IB = 7 A
1.8
1.9
1.4
1.4
V
V
V
V
TC = 100oC
IC = 35 A IB = 1.75 A
IC = 35 A IB = 1.75 A TC = 100oC
Rated of Rise of
on-state Collector
Current
VCC = 100 V RC = 0 IB1 = 3.5 A
tp = 3 µs
140
A/µs
TC = 100oC
Pulsed: Pulse duration = 300 µs, duty cycle < 2 %
INDUCTIVE LOAD
Symbol
Parameter
Storage Time
Fall Time
Cross Over Time
Test Conditions
Min.
Typ.
Max.
Unit
ts
tf
tc
IC = 35 A
VCC = 90 V
RB2 = 1.4 Ω
LC = 0.15 mH
TC = 100oC
1.8
0.2
0.35
µs
µs
µs
VBB = -5 V
ΙB1 = 1.75 A
VCLAMP = 125V
2/4
BUT70W
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.7
2.2
0.4
1
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
34.6
5.5
1.362
0.217
2
3
0.079
0.118
P025P
3/4
BUT70W
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
4/4
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