BULD742CT4 [STMICROELECTRONICS]
High voltage fast-switching; 高压快速切换
| 型号： | BULD742CT4 |
| 厂家： | 
ST |
| 描述： | High voltage fast-switching |
| 文件： | 总12页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BULD742C
High voltage fast-switching
NPN power transistor
Features
■ Low spread of dynamic parameters
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
3
1
Applications
DPAK
■ Electronic ballast for fluorescent lighting
■ Switch mode power supplies
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Figure 1.
Internal schematic diagram
Table 1.
Order code
BULD742CT4
Device summary
Marking
Package
Packaging
BULD742C
DPAK
Tape & reel
August 2007
Rev 1
1/12
www.st.com
12
Contents
BULD742C
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
BULD742C
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms)
Collector current
Value
Unit
V
VCES
VCEO
VEBO
IC
1050
400
V
V(BR)EBO
V
4
A
ICM
IB
Collector peak current (tP < 5ms)
Base current
8
A
2
A
IBM
Ptot
Tstg
TJ
Base peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature
4
45
A
W
°C
°C
-65 to 150
150
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
2.78
73
Unit
°C/W
°C/W
Rthj-case
Thermal resistance junction - case
Thermal resistance junction - ambient
Rthj-amb
3/12
Electrical characteristics
BULD742C
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test Conditions
VCE =1050 V
Min. Typ. Max. Unit
Collector cut-off current
ICES
0.2
10
19
10
250
24
µA
µA
V
(VBE = 0)
Collector cut-off current
(IB = 0)
ICEO
VCE =400 V
Emitter base breakdown
voltage (IC = 0)
V(BR)EBO
IE = 1 mA
15
Collector-emitter
sustaining voltage
(1)
IC =10 mA
IC = 1 A
400
450
V
VCEO(sus)
(IB = 0)
_
IB = 0.2 A
IB = 1 A
0.15
0.6
0.5
1.5
V
V
Collector-emitter
saturation voltage
(1)
VCE(sat)
IC = 3.5 A _ _
Base-emitter saturation
voltage
(1)
IC = 3.5 A
IB = 1 A
1.1
1.5
V
VBE(sat)
IC = 0.1 A
_
VCE = 5 V
48
25
75
35
100
50
(1)
DC current gain
hFE
IC = 0.8 A _ _ VCE = 3 V
IC = 2 A VCC = 125 V
B1 = -IB2 = 400 mA
Resistive load
Storage time
Fall time
I
ts
tf
2.4
3.5
µs
350
500
ns
tp = 300 µs
L = 2 mH
VBE(off) = -5 V
VBE(off) = -5 V
C = 1.8 nF
Repetitive avalanche
energy
Ear
6
mJ
1. Pulsed duration = 300 ms, duty cycle ≤1.5%
4/12
BULD742C
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Safe operating area
Output characteristics
DC current gain
Figure 3.
Figure 5.
Figure 7.
Derating curve
DC current gain
Collector - emitter saturation
voltage
5/12
Electrical characteristics
Figure 8.
BULD742C
Base-emitter saturation
voltage
Figure 9.
Resistive load switching on
times (h = 5)
FE
Figure 10. Resistive load switching off Figure 11. Resistive load switching on
times (h = 5) times (h = 10)
FE
FE
Figure 12. Resistive load switching off Figure 13. Reverse biased SOA
times (h = 10)
FE
6/12
BULD742C
Test circuit
3
Test circuit
Figure 14. Energy rating test circuit
Figure 15. Resistive load switching test circuit
7/12
Package mechanical data
BULD742C
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/12
BULD742C
Package mechanical data
DPAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
A1
A2
B
2.2
0.9
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.03
0.64
5.2
b4
C
0.45
0.48
6
C2
D
D1
E
5.1
0.200
6.4
6.6
0.252
0.260
E1
e
4.7
0.185
0.090
2.28
e1
H
4.4
9.35
1
4.6
0.173
0.368
0.039
0.181
0.397
10.1
L
(L1)
L2
L4
R
2.8
0.8
0.110
0.031
0.6
0°
1
0.023
0°
0.039
8°
0.2
0.008
V2
8°
0068772-F
9/12
Packaging mechanical data
BULD742C
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
10/12
BULD742C
Revision history
6
Revision history
Table 5.
Date
09-Aug-2007
Document revision history
Revision
Changes
1
First release.
11/12
BULD742C
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