BULD85KC [POINN]
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE; 带集成二极管NPN硅晶体管
| 型号： | BULD85KC |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| 文件： | 总8页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1997, Power Innovations Limited, UK
MAY 1994 - REVISED SEPTEMBER 1997
●
●
Designed Specifically for High Frequency
Electronic Ballasts
TO-220 PACKAGE
(TOP VIEW)
Integrated Fast t Anti-Parallel Diode,
rr
1
2
3
B
C
E
Enhancing Reliability
●
●
●
Diode t Typically 1 µs
rr
Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and
Diode
Pin 2 is in electrical contact with the mounting base.
MDTRACA
●
●
Characteristics Optimised for Cool Running
device symbol
C
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
description
The new BULDxx range of transistors have been
B
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast t anti-
E
rr
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (VBE = 0)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
VCES
VCBO
VCEO
VEBO
IC
600
V
V
600
400
V
9
V
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
6
A
ICM
8
A
IB
2
A
Peak base current (see Note 1)
IBM
4
A
Continuous device dissipation at (or below) 25°C case temperature
Maximum average continuous diode forward current at (or below) 25°C case temperature
Operating junction temperature range
Ptot
IE(av)
Tj
70
W
A
0.5
-65 to +150
-65 to +150
°C
°C
Storage temperature range
Tstg
NOTE 1: This value applies for tp = 10 ms, duty cycle £ 2%.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
VCEO(sus)
ICES
IC
=
0.1 A
L = 25 mH
400
V
VCE = 600 V
VBE = 0
IC = 0
10
1
µA
mA
V
IEBO
VEB
=
9 V
Base-emitter
VBE(sat)
VCE(sat)
IB
=
0.2 A
IC
=
1 A
(see Notes 2 and 3)
(see Notes 2 and 3)
0.85
1.1
saturation voltage
Collector-emitter
saturation voltage
IB
IB
=
=
0.2 A
0.4 A
10 V
1 V
IC
IC
=
=
1 A
2 A
0.2
0.4
0.5
1
V
VCE
VCE
VCE
=
=
=
IC = 0.01 A
10
10
10
17.5
15
Forward current
transfer ratio
hFE
IC
IC
=
=
1 A
2 A
(see Notes 2 and 3)
(see Notes 2 and 3)
20
20
5 V
15.5
Anti-parallel diode
forward voltage
VEC
IE
=
1 A
1.2
1.5
V
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
thermal characteristics
PARAMETER
Junction to free air thermal resistance
Junction to case thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJA
RqJC
62.5
1.78
°C/W
°C/W
switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
Measured by holding transistor
TYP
MAX
UNIT
Anti-parallel diode
trr
(see Note 4)
1
µs
reverse recovery time in an off condition, VEB = -3 V.
NOTE 4: Tested in a typical High Frequency Electronic Ballast.
inductive-load switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
MIN
TYP
MAX
UNIT
I
C = 1 A
IB(on) = 0.2 A
IB(off) = 0.2 A
V
CC = 40 V
tsv
Storage time
4
5
µs
L = 1 mH
VCLAMP = 300 V
resistive-load switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
I
C = 1 A
I
B(on) = 0.2 A
tfi
Current fall time
150
200
ns
VCC = 300 V
IB(off) = 0.2 A
P R O D U C T
I N F O R M A T I O N
2
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
INSTANTANEOUS FORWARD VOLTAGE
LDX85CHF
LDX85CVF
30
10
1·0
TC = 25°C
TC = 25°C
10
0·1
VCE
VCE
=
=
1 V
5 V
VCE = 10 V
3·0
0·01
0·01
0·1
1·0
10
0
0·5
1·0
1·5
2·0
2·5
IC - Collector Current - A
VEC - Instantaneous Forward Voltage - V
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
LDX85CVB
1.0
0.9
0.8
0.7
0.6
IC = 1 A
IB = 0.2 A
-50
-25
0
25
50
75
100 125 150
TC - Case Temperature - °C
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
LDX85CFB
LDX85CRB
10
1·0
10
8
TC = 25°C
IB(on) = IC / 5
VBE(off) = -5 V
TC = 25°C
6
4
0·1
tp = 100 µs
2
tp = 1 ms
tp = 10 ms
DC Operation
0·01
0
1·0
10
100
1000
0
100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
VCE - Collector-Emitter Voltage - V
Figure 4.
Figure 5.
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LDX85CZA
1·0
0·1
60%
40%
TA = 25°C
20%
10%
t1
t2
0%
0·01
duty cycle = t1/t2
Read time at end of t1,
æZ
ö
TJ (max) – TA = PD (peak) · ç qJA÷ · RqJA (max)
R
è
qJA ø
102
0·001
10-4
10-3
10-2
10-1
100
101
103
t1 - Power Pulse Duration - s
Figure 6.
P R O D U C T
I N F O R M A T I O N
4
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
LDX85CZC
1·0
TC = 25°C
60%
40%
20%
10%
0%
0·1
t1
duty cycle = t1/t2
Read time at end of t1,
t2
æZ
ö
TJ (max) – TC = PD (peak) · ç qJC÷ · RqJC (max)
R
è
qJCø
0·01
10-4
10-3
10-2
10-1
100
101
102
t1 - Power Pulse Duration - s
Figure 7.
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LDX85CPA
1000
TA = 25°C
0%
100
10%
20%
10
40%
60%
1·0
10-4
10-3
10-2
10-1
100
101
102
103
t1 - Power Pulse Duration - s
Figure 8.
P R O D U C T
I N F O R M A T I O N
5
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION JUNCTION TO CASE
vs
POWER PULSE DURATION
LDX85CPC
1000
100
10
0%
TC = 25°C
10%
20%
40%
60%
10-4
10-3
10-2
10-1
100
101
102
t1 - Power Pulse Duration - s
Figure 9.
P R O D U C T
I N F O R M A T I O N
6
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
P R O D U C T
I N F O R M A T I O N
7
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
8
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