BULK26D [ETC]
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| 型号： | BULK26D |
| 厂家： | 
ETC |
| 描述： |
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| 文件： | 总7页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUL26D
BULK26D
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
■
■
■
■
SGS-THOMSON PREFERRED SALESTYPES
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
■
■
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125oC
INTEGRATED ANTIPARALLEL
3
COLLECTOR-EMITTER DIODE
3
2
2
1
1
APPLICATIONS
■
ELECTRONIC BALLASTS FOR
TO-220
SOT-82
FLUORESCENT LIGHTING
■
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL26D and BULK26D are manufactured
using medium voltage Multi Epitaxial Planar
technology for high switching speeds and
medium voltage capability. They use a Cellular
Emitter structure with planar edge termination to
enhance switching speeds while maintaining a
wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BUL26D
BULK26D
VCES
VCEO
VEBO
IC
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
600
300
12
4
V
V
V
A
ICM
IB
Collector Peak Current (tp < 5 ms)
Base Current
8
A
2
A
IBM
Ptot
Tstg
Tj
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature Range
Max. Operating Junction Temperature
4
A
60
50
W
oC
oC
-65 to 150
150
1/7
December 1994
BUL26D
THERMAL DATA
TO220
SOT-82
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
2.08
62.5
2.5
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 600 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
200
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 300 V
IC = 100 mA
IE = 10 mA
250
µA
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
300
12
VEBO
Emitter-Base Voltage
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
IC = 3 A IB = 0.6 A
0.5
0.7
1
V
V
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
IC = 3 A IB = 0.6 A
1.1
1.2
1.3
V
V
V
hFE
DC Current Gain
IC = 10 mA
IC = 1 A
VCE = 5 V
VCE = 3 V
10
15
45
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 3 A
IB1 = 0.6 A
ts
tf
V
BE (off) = -5 V RBB = 0 Ω
0.8
70
1.3
130
µs
ns
VCL = 250 V
L = 200 µH
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 3 A
VBE (off) = -5 V RBB = 0 Ω
IB1 = 0.6 A
ts
tf
1.2
100
µs
ns
VCL = 250 V
L = 200 µH
Tj = 125 oC
Vf
Diode Forward Voltage IC = 2.5 A
3
V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
Derating Curves
2/7
BUL26D
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
3/7
BUL26D
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/7
BUL26D
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
5/7
BUL26D
SOT-82 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.019
0.04
MAX.
0.307
0.445
0.035
0.030
0.106
A
B
10.5
0.7
11.3
0.9
b
b1
C
c1
D
e
0.49
2.4
0.75
2.7
1.2
15.7
2.2
0.047
0.618
0.087
0.173
0.150
0.100
e3
F
4.4
3.8
H
2.54
C
A
c1
e
b
b1
e3
P032A
6/7
BUL26D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
7/7
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