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BULT106D [STMICROELECTRONICS]

High voltage fast-switching NPN power transistor; 高压快速开关NPN功率晶体管
BULT106D
型号： BULT106D
厂家： ST    ST
描述：

High voltage fast-switching NPN power transistor
高压快速开关NPN功率晶体管

晶体 开关 晶体管 高压
文件： 总5页 (文件大小：63K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BF421  
®
SMALL SIGNAL PNP TRANSISTOR  
PRELIMINARY DATA  
Ordering Code Marking  
Package / Shipment  
BF421  
BF421 TO-92 / Bulk  
BF421 TO-92 / Ammopack  
BF421-AP  
■
■
■
SILICON EPITAXIAL PLANAR PNP HIGH  
VOLTAGE TRANSISTOR  
TO-92 PACKAGE SUITABLE FOR  
THROUGH-HOLE PCB ASSEMBLY  
THE NPN COMPLEMENTARY TYPE IS  
BF420  
TO-92  
Bulk  
TO-92  
Ammopack  
APPLICATIONS  
■
VIDEO AMPLIFIER CIRCUITS (RGB  
CATHODE CURRENT CONTROL)  
TELEPHONE WIRELINE INTERFACE (HOOK  
SWITCHES, DIALER CIRCUITS)  
■
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
-300  
Unit  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
-300  
-5  
V
-500  
mA  
mA  
mW  
oC  
oC  
ICM  
Collector Peak Current (tp < 5ms)  
-600  
o
Ptot  
Total Dissipation at TC = 25 C  
830  
Tstg  
Storage Temperature  
-65 to 150  
150  
Tj  
Max. Operating Junction Temperature  
1/5  
February 2003  
BF421  
THERMAL DATA  
Rthj-amb  
Rthj-Case  
•
•
Thermal Resistance Junction-Ambient  
Thermal Resistance Junction-Case  
Max  
Max  
150  
50  
oC/W  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCB = -200 V  
Min.  
Typ.  
Max.  
Unit  
ICBO  
Collector Cut-off  
Current (IE = 0)  
-10  
-10  
-100  
nA  
µA  
µA  
o
VCB = -200 V  
VCB = -300 V  
TC = 150 C  
IEBO  
Emitter Cut-off Current VEB = -5 V  
(IC = 0)  
-50  
nA  
V(BR)CEO Collector-Emitter  
Breakdown Voltage  
(IB = 0)  
IC = -10 mA  
IC = -10 µA  
IE = -100 µA  
-300  
-300  
-5  
V
V(BR)CBO Collector-Base  
Breakdown Voltage  
(IE = 0)  
V
V
V(BR)EBO Emitter-Base  
Breakdown Voltage  
(IC = 0)  
VCE(sat)  
Collector-Emitter  
Saturation Voltage  
IC = -30 mA  
IC = -30 mA  
IC = -25 mA  
IB = -5 mA  
IB = -5 mA  
VCE = -20 V  
-0.6  
-1.2  
V
V
VBE(sat)  
Base-Emitter  
Saturation Voltage  
hFE  
fT  
DC Current Gain  
50  
60  
Transition Frequency  
Reverse Capacitance  
IC = -10 mA VCE = -10 V f =100MHz  
IE = 0 VCB = -30 V f = 1MHz  
MHz  
pF  
CRE  
1.6  
Pulsed: Pulse duration ≤ 300 µs, duty cycle ≤ 2 %  
2/5  
BF421  
TO-92 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.32  
TYP.  
MAX.  
4.95  
MIN.  
0.170  
0.014  
0.175  
0.130  
0.095  
0.045  
0.500  
0.085  
0.045  
0.016  
4 degree  
MAX.  
A
b
0.195  
0.020  
0.194  
0.155  
0.105  
0.055  
0.609  
0.094  
0.059  
0.022  
6 degree  
0.36  
0.51  
D
E
4.45  
4.95  
3.30  
3.94  
e
2.41  
2.67  
e1  
L
1.14  
1.40  
12.70  
2.16  
15.49  
2.41  
R
S1  
W
V
1.14  
1.52  
0.41  
0.56  
4 degree  
6 degree  
3/5  
BF421  
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
4.80  
MIN.  
MAX.  
0.189  
0.150  
0.063  
0.091  
0.019  
0.508  
0.278  
0.116  
0.079  
0.748  
0.248  
0.364  
0.020  
0.807  
0.650  
0.984  
0.165  
0.035  
0.433  
A1  
T
3.80  
T1  
1.60  
2.30  
0.48  
T2  
d
P0  
12.50  
5.65  
12.70  
6.35  
2.54  
12.90  
7.05  
0.492  
0.222  
0.096  
-0.079  
0.689  
0.224  
0.335  
0.500  
0.250  
0.100  
P2  
F1,F2  
delta H  
W
2.44  
2.94  
2.00  
-2.00  
17.50  
5.70  
18.00  
6.00  
9.00  
19.00  
6.30  
0.709  
0.236  
0.354  
W0  
W1  
W2  
H
8.50  
9.25  
0.50  
18.50  
15.50  
20.50  
16.50  
25.00  
4.20  
0.728  
0.610  
H0  
H1  
D0  
t
16.00  
4.00  
0.630  
0.157  
3.80  
0.150  
0.90  
L
11.00  
I1  
3.00  
0.118  
delta P  
-1.00  
1.00  
-0.039  
0.039  
4/5  
BF421  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
5/5  

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