BU900TP [STMICROELECTRONICS]

NPN power TRILINTON; NPN电源TRILINTON
BU900TP
型号: BU900TP
厂家: ST    ST
描述:

NPN power TRILINTON
NPN电源TRILINTON

文件: 总8页 (文件大小:114K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BU900TP  
NPN power TRILINTON  
Preliminary Data  
Features  
Integrated high voltage active clamping zener  
Integrated antiparallel collector-emitter diode  
Clamping energy capability 100% tested  
Very high current gain  
3
2
1
Applications  
SOT-82  
Engine ignition control  
Switching regulators  
Motor control  
Light ballast  
Figure 1.  
Internal schematic diagram  
Description  
The BU900TP is a planar, monolithic, high voltage  
power Trilinton with a built-in active zener  
clamping circuit and an antiparallel Collector to  
Emitter diode. This device has been specifically  
designed for unclamped, inductive applications  
such as Ignition systems, Switching Regulators,  
and wherever high voltage and high robustness is  
required.  
Table 1.  
Part Number  
BU900TP  
Device summary  
Marking  
Package  
Packing  
BU900TP  
SOT-82  
Tube  
August 2007  
Rev 1  
1/8  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
8
Electrical ratings  
BU900TP  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
V
V(BR)CES  
VEBO  
IC  
Collector-emitter breakdown voltage (VBE = 0)  
Emitter-base voltage (IC = 0)  
Collector current  
370  
8
V
5
A
ICM  
Collector peak current (tP < 5ms)  
Base current  
8
A
IB  
1
55  
A
Ptot  
Total dissipation at Tc = 25°C  
Storage temperature  
W
°C  
°C  
Tstg  
TJ  
-65 to 150  
150  
Max. operating junction temperature  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
2.27  
80  
Unit  
°C/W  
°C/W  
Rthj-case  
Thermal resistance junction-case  
Thermal resistance junction-ambient  
Rthj-amb  
2/8  
BU900TP  
Electrical characteristics  
2
Electrical characteristics  
(T  
= 25°C unless otherwise specified)  
case  
Table 4.  
Symbol  
Electrical characteristics  
Parameter  
Test Conditions  
VEB = 8 V  
Min. Typ. Max. Unit  
Emitter cut-off current  
(IC = 0)  
IEBO  
100  
100  
µA  
µA  
Collector cut-off current  
(VBE = 0)  
ICES  
VCE = 370 V  
Collector-emitter  
breakdown voltage  
V(BR)CES  
IC = 50 mA  
370  
660  
V
(VBE = 0)  
IC = 2.5 A  
_ IB = 1 mA  
IB = 3 mA  
4
4
V
V
Collector-emitter  
saturation voltage  
(1)  
VCE(sat)  
IC = 3 A _ _  
Base-emitter saturation  
voltage  
IC = 3 A  
_
IB = 3 mA  
(1)  
3.5  
V
VBE(sat)  
hFE  
VF  
IC = 1 A  
IC = 5 A  
_
VCE = 5 V  
DC current gain  
7000  
80  
Diode forward voltage  
18  
V
Secondary breakdown  
energy  
(1)  
IC = 4 A  
L = 10 mH  
mJ  
Es/b  
1. Pulsed duration = 300 ms, duty cycle 1.5%  
3/8  
Electrical characteristics  
BU900TP  
2.1  
Electrical characteristics (curves)  
Figure 2.  
DC current gain  
Figure 3.  
Collector-emitter saturation  
voltage  
Figure 4.  
Collector-emitter saturation Figure 5.  
voltage  
Base-emitter saturation  
voltage  
4/8  
BU900TP  
Package mechanical data  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
5/8  
Package mechanical data  
BU900TP  
SOT-82FM MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.85  
1.47  
0.40  
1.4  
TYP.  
MAX.  
3.05  
1.67  
0.60  
1.6  
MIN.  
1.122  
0.578  
0.157  
0.551  
0.511  
0.177  
4.133  
0.866  
2.933  
6.102  
0.767  
MAX.  
A
A1  
b
1.200  
0.657  
0.236  
0.630  
0.590  
0.236  
4.291  
1.102  
3.051  
6.260  
0.925  
b1  
b2  
c
1.3  
1.5  
0.45  
10.5  
2.2  
0.6  
D
10.9  
2.8  
e
E
7.45  
15.5  
1.95  
7.75  
15.9  
2.35  
L
L1  
P032R  
6/8  
BU900TP  
Revision history  
4
Revision history  
Table 5.  
Date  
02-Aug-2007  
Document revision history  
Revision  
Changes  
1
First release.  
7/8  
BU900TP  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT  
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING  
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,  
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE  
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2007 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
8/8  

相关型号:

BU90104GWZ

BU90104GWZ是以最大6MHz的开关频率动作的小型、高效率降压开关稳压器。支持最大1.0A (VIN=3.0 ~ 5.5V时)的输出电流,适合电池驱动的便携设备。根据MODE端子逻辑,可选择自动切换强制PWM模式或PWM/PFM模式。在PFM模式时可减小自消耗电流,提高轻负载时的效率。
ROHM

BU902

Silicon NPN Power Transistors
ISC

BU902

Silicon NPN Power Transistors
SAVANTIC

BU903

Silicon NPN Power Transistors
SAVANTIC

BU903

Silicon NPN Power Transistors
ISC

BU908

BU908
MICRO-ELECTRO

BU908

isc Silicon NPN Power Transistor
ISC

BU908

Silicon NPN Power Transistors
SAVANTIC

BU908F

TO-3P Fully Isolated Plastic Package Transistor CDIL
CDIL

BU90LV047A

4bit LVDS Driver
ROHM

BU90LV047A-E2

Line Driver,
ROHM

BU90LV048

4bit LVDS Receiver
ROHM