BU900TP [STMICROELECTRONICS]
NPN power TRILINTON; NPN电源TRILINTON型号: | BU900TP |
厂家: | ST |
描述: | NPN power TRILINTON |
文件: | 总8页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BU900TP
NPN power TRILINTON
Preliminary Data
Features
■ Integrated high voltage active clamping zener
■ Integrated antiparallel collector-emitter diode
■ Clamping energy capability 100% tested
■ Very high current gain
3
2
1
Applications
SOT-82
■ Engine ignition control
■ Switching regulators
■ Motor control
■ Light ballast
Figure 1.
Internal schematic diagram
Description
The BU900TP is a planar, monolithic, high voltage
power Trilinton with a built-in active zener
clamping circuit and an antiparallel Collector to
Emitter diode. This device has been specifically
designed for unclamped, inductive applications
such as Ignition systems, Switching Regulators,
and wherever high voltage and high robustness is
required.
Table 1.
Part Number
BU900TP
Device summary
Marking
Package
Packing
BU900TP
SOT-82
Tube
August 2007
Rev 1
1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
8
Electrical ratings
BU900TP
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
V(BR)CES
VEBO
IC
Collector-emitter breakdown voltage (VBE = 0)
Emitter-base voltage (IC = 0)
Collector current
370
8
V
5
A
ICM
Collector peak current (tP < 5ms)
Base current
8
A
IB
1
55
A
Ptot
Total dissipation at Tc = 25°C
Storage temperature
W
°C
°C
Tstg
TJ
-65 to 150
150
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
2.27
80
Unit
°C/W
°C/W
Rthj-case
Thermal resistance junction-case
Thermal resistance junction-ambient
Rthj-amb
2/8
BU900TP
Electrical characteristics
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test Conditions
VEB = 8 V
Min. Typ. Max. Unit
Emitter cut-off current
(IC = 0)
IEBO
100
100
µA
µA
Collector cut-off current
(VBE = 0)
ICES
VCE = 370 V
Collector-emitter
breakdown voltage
V(BR)CES
IC = 50 mA
370
660
V
(VBE = 0)
IC = 2.5 A
_ IB = 1 mA
IB = 3 mA
4
4
V
V
Collector-emitter
saturation voltage
(1)
VCE(sat)
IC = 3 A _ _
Base-emitter saturation
voltage
IC = 3 A
_
IB = 3 mA
(1)
3.5
V
VBE(sat)
hFE
VF
IC = 1 A
IC = 5 A
_
VCE = 5 V
DC current gain
7000
80
Diode forward voltage
18
V
Secondary breakdown
energy
(1)
IC = 4 A
L = 10 mH
mJ
Es/b
1. Pulsed duration = 300 ms, duty cycle ≤1.5%
3/8
Electrical characteristics
BU900TP
2.1
Electrical characteristics (curves)
Figure 2.
DC current gain
Figure 3.
Collector-emitter saturation
voltage
Figure 4.
Collector-emitter saturation Figure 5.
voltage
Base-emitter saturation
voltage
4/8
BU900TP
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
5/8
Package mechanical data
BU900TP
SOT-82FM MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.85
1.47
0.40
1.4
TYP.
MAX.
3.05
1.67
0.60
1.6
MIN.
1.122
0.578
0.157
0.551
0.511
0.177
4.133
0.866
2.933
6.102
0.767
MAX.
A
A1
b
1.200
0.657
0.236
0.630
0.590
0.236
4.291
1.102
3.051
6.260
0.925
b1
b2
c
1.3
1.5
0.45
10.5
2.2
0.6
D
10.9
2.8
e
E
7.45
15.5
1.95
7.75
15.9
2.35
L
L1
P032R
6/8
BU900TP
Revision history
4
Revision history
Table 5.
Date
02-Aug-2007
Document revision history
Revision
Changes
1
First release.
7/8
BU900TP
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