BU902 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU902 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU902
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For color TV horizontal deflection circuits.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
VCBO
Collector-base voltage
1100
V
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
480
7
V
V
Open collector
8
A
ICM
PT
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
tp<5ms
15
A
TC=25℃
100
150
-65~150
W
℃
℃
Tj
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal resistance junction case
1.0
℃/W
Rth j-c
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU902
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
480
7
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=100mA; IB=0;
Emitter-base breakdown voltage
IE=10mA; IC=0;
V
Collector-emitter saturation voltage IC=4A;IB=0.8A
5.0
1.5
1.0
0.1
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4A;IB=0.8A
VCB=1100V;IE=0
VEB=5V;IC=0
V
mA
mA
IEBO
hFE-1
IC=1A ; VCE=5V
IC=4A ; VCE=5V
10
hFE-2
DC current gain
5.5
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU902
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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