BU908 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU908 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU908
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Power Dissipation-
: PD= 125W@TC= 25℃
APPLICATIONS
·Designed for use in color TV horizontal deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
700
UNIT
V
V
7
V
Collector Current- Continuous
8
A
Collector Power Dissipation
@ TC=25℃
PC
125
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU908
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
CONDITIONS
MIN
700
7
TYP. MAX UNIT
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 100mA; IB= 0
V
V
IE= 10mA; IC= 0
IC= 3.2A; IB= 0.8A
IC= 3.2A; IB= 0.8A
2.0
1.3
V
V
VCE
(sat)
VBE
(sat)
V
CE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125℃
0.1
2.0
ICES
mA
mA
IEBO
hFE
fT
Emitter Cutoff Current
VEB= 5.0V; IC= 0
0.1
DC Current Gain
IC= 1.5A; VCE= 5V
IC= 0.1A; VCE= 10V
8
Current-Gain—Bandwidth Product
7
MHz
2
isc Website：www.iscsemi.cn
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