AM82731-006 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; 射频与微波晶体管S波段雷达应用
| 型号： | AM82731-006 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 文件： | 总4页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM82731-006
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.
.
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT IMPEDANCE MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 5.5 W. MIN. WITH 5.6 dB GAIN
.400 x .400 2NLFL (S042)
hermeticaly sealed
BANDWIDTH
400 MHz
=
ORDER CODE
AM 82731-006
BRANDING
82731-6
PIN CONNECTION
DESCRIPTION
The AM82731-006 device is a medium power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 5:1 output VSWR. Low RF thermal
resistance, refractory/gold metallization, and auto-
matic wire bonding techniques ensure high reliability
and product consistency.
The AM82731-006 is supplied in the hermetic met-
al/ceramic package with internal input/output imped-
ance matching circuitry, and is intended for military
and other high reliability applications.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T
= 25°C)
case
Symbol
Parameter
Value
Unit
PDISS
40
W
Power Dissipation*
Device Current*
(TC 100°C)
≤
Ic
VCC
TJ
1.8
34
A
V
Collector-Supply Voltage*
°
C
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
°
C
TSTG
− 65 to +200
THERMAL DATA
°
C/W
RTH(j-c)
Junction-Case Thermal Resistance
3.75
*Applies only to rated RF amplifier operation
August 1992
1/4
AM82731-006
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
BVCBO
BVEBO
BVCER
ICES
Test Conditions
IE = 0mA
Unit
V
Min.
Typ. Max.
C
IC = 5mA
50
—
—
—
—
—
—
—
—
4
IE = 1mA
IC = 5mA
VCE = 30V
VCE = 5V
IC = 0mA
3.5
50
—
V
RBE = 10Ω
V
mA
—
hFE
IC = 500mA
10
—
DYNAMIC
Value
Symbol
Test Conditions
PIN = 1.5W
Unit
W
Min. Typ. Max.
POUT
f = 2.7 — 3.1GHz
f = 2.7 — 3.1GHz
f = 2.7 — 3.1GHz
VCC = 30V
VCC = 30V
VCC = 30V
5.5
27
6.0
32
—
—
—
ηC
PIN = 1.5W
%
GPB
PIN = 1.5W
5.6
6.0
dB
Note:
Pulse Width
100µS
10%
=
=
Duty Cycle
TYPICAL PERFORMANCE
TYPICAL BROADBAND
PERFORMANCE
2/4
AM82731-006
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCES
ZIN
Z
IN
M
TYPICAL COLLECTOR
LOAD IMPEDANCES
L
H
ZCL
L
Z
CL
H
M
FREQ.
Z ( )
ZCL( )
Ω
Ω
IN
L
2.7 GHz 9.0 + j 22.0 48.0 + j 11.5
2.9 GHz 9.0 + j 23.0 43.0 + j 9.0
3.1 GHz 12.5 + j 25.0 30.0 + j 3.0
3.3 GHz 20.0 + j 25.0 21.5 + j 0.0
3.5 GHz 22.0 + j 22.5 16.0 − j 3.0
=
=
•
M
=
PIN = 1.5W
VCC = 30V
Normalized to 50 ohms
=
•
H
=
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick Al O (Er 9.6)
2
3
=
C3
L1
L2
:
:
:
100 pF Chip Capacitor
No. 32 Wire, 0.062 Inch Long
Printed RF Choke
C1
C2
:
:
1500 pF RF Feedthru
100 µF Electrolytic
3/4
AM82731-006
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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