AM82731-012 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; 射频与微波晶体管S波段雷达应用
| 型号： | AM82731-012 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM82731-012
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
PRELIMINARY DATA
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT
12 W MIN. WITH 6.0 dB GAIN
=
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
AM82731-012
BRANDING
82731-12
DESCRIPTION
PIN CONNECTION
The AM82731-012 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
This device is capable of operaion over a wide
range of pulse widths, duty cycles, and tempera-
tures and can withstand a 3:1 output VSWR with
a + 1 dB input overdrive. Low RF thermal resist-
ance, refractory/gold metallization, and automatic
wire bonding techniques ensure high reliability and
product consistency (including phase charac-
teristics).
The AM82731-012 is supplied in the Hermetic Met-
al/Ceramic package with internal Input/Output im-
pedance matching sircuitry, and is intended for
military and other high reliability applications.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T
= 25°C)
case
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
Device Current*
(TC ≤ 50˚C)
50
W
IC
VCC
TJ
2.0
46
A
V
Collector-Supply Voltage*
°
°
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
C
C
TSTG
65 to +200
−
THERMAL DATA
°
C/W
RTH(j-c)
Junction-Case Thermal Resistance*
4.0
*Applies only to rated RF amplifier operation
1/3
August 1992
AM82731-012
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
BVCBO
BVEBO
BVCER
ICES
Test Conditions
IE = 0mA
Unit
V
Min. Typ.
Max.
IC = 7mA
IE = 1mA
IC = 7mA
VCE = 40V
VCE = V
55
3.5
55
—
—
—
—
—
—
—
IC = 0mA
—
—
V
RBE = 10Ω
V
5
mA
—
hFE
IC = 600mA
30
300
DYNAMIC
Value
Symbol
Test Conditions
Unit
W
Min.
Typ. Max.
POUT
f = 2700 —3100 MHz PIN 3.0W
VCC 40V
12
—
—
—
—
—
—
=
=
η
c
f = 2700 —3100 MHz PIN 3.0W
VCC 40V
30
%
=
=
GP
f = 2700 —3100 MHz PIN 3.0W
VCC 40V
6.0
dB
=
=
Note:
Pulse Width
100µS
10%
=
=
Duty Cycle
PACKAGE MECHANICAL DATA
2/3
AM82731-012
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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