AM82731-050 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; 射频与微波晶体管S波段雷达应用
| 型号： | AM82731-050 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 文件： | 总4页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM82731-050
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
RUGGEDIZED VSWR 3:1 @ 1 dB OVER-
DRIVE
.
.
.
.
.
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
.400 x .400 2LFL (S036)
METAL/CERAMIC HERMETIC PACKAGE
POUT = 50 W MIN. WITH 6 dB GAIN
hermetically sealed
ORDER CODE
AM82731-050
BRANDING
82731-50
DESCRIPTION
PIN CONNECTION
The AM82731-050 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
The device is capable of operation over a wde
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR with
a +1 dB input overdrive. Low RF thermal resist-
ance, refractory/gold metallization, and compu-
terized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM82731-050 is supplied in the AMPAC
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
Device Current*
(TC ≤ 50°C)
167
W
IC
VCC
TJ
8
46
A
V
Collector-Supply Voltage*
°
°
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
C
C
TSTG
− 65 to +200
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
1.2
°C/W
*Applies only to rated RF amplifier operation
August 1992
1/4
AM82731-050
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
BVCBO
BVEBO
BVCER
ICES
Test Conditions
IE = 0mA
Unit
V
Min. Typ.
Max.
IC = 25mA
IE = 5mA
55
3.5
55
—
—
—
—
—
—
—
IC = 0mA
—
—
20
—
V
IC = 25mA
VCE = 40V
VCE = 5V
RBE = 10Ω
V
mA
—
hFE
IC = 3A
30
DYNAMIC
Value
Symbol
Test Conditions
Unit
W
Min.
Typ. Max.
POUT
f = 2700 — 3100MHz PIN = 12.5W
f = 2700 — 3100MHz PIN = 12.5W
f = 2700 — 3100MHz PIN = 12.5W
VCC = 40V
VCC = 40V
VCC = 40V
50
56
35
—
—
—
η
c
30
%
GP
6.0
6.5
dB
Note:
Pulse Width
100µS
10%
=
=
Duty Cycle
TYPICAL PERFORMANCE
COLLECTOR EvFs FFREIQUCENICEY NCY vs
GAIN vs FREQUENCY
COLLECTOR EFFICIENCY
FREQUENCY
GAIN vs FREQUENCY
8.00
7.00
6.00
5.00
4.00
50
7.19
6.93
C
39.5
6.43
O
36.4
38.0
L
L
E
C
T
O
R
Upper Window
Mean
40
30
20
10
Upper Window
Mean
Lower Window
G
A
I
Lower Window
E
F
F
I
N
d
B
C
I
E
N
C
Y
50 Watts Output
50 Watts Ouput
@ 100 µS 10% Pulse
@ 100 µS 10% Pulse
V
40 Volts
V
CC
40 Volts
CC
=
=
%
2.7
2.9
3.1
2.7
2.9
3.1
FREQUENCY
FREQUENCY
2/4
AM82731-050
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
L
ZIN
H
H
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
ZCL
L
PIN = 12.5 W
VCC = 40 V
Z0 = 50 ohms
FREQ.
ZIN (Ω)
ZCL (Ω)
L = 2.7 GHz
M = 2.9 GHz
H = 3.1 GHz
7.4 + j 5.4
7.8 + j 3.0
8.0 + j 2.0
7.1 − j 8.6
5.4 − j 7.4
4.6 − j 2.6
TEST CIRCUIT
3/4
AM82731-050
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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