SFT390604A2 [SSDI]
Dual Microminiature Package 800 mA 75 Volts NPN/PNP Transistor; 双超小型封装800毫安75伏特NPN / PNP晶体管
| 型号： | SFT390604A2 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Dual Microminiature Package 800 mA 75 Volts NPN/PNP Transistor |
| 文件： | 总2页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT390604A2
Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Dual Microminiature Package
800 mA 75 Volts
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFT390604A2 __ __
NPN/PNP Transistor
Screening 2/ __ = Commercial
TX = TX Level
│
│
│
│
│
└
└
Features:
TXV = TXV Level
S = S Level
• High Speed Switching Transistor
• Multiple Devices Reduce Board Space
• High Power Dissipation: Up to 600 mW / device
• TX, TXV, S-Level screening available
• Replaces both 2N3906AU (PNP) &
2N3904AU(NPN) in one package
Package GW = Gullwing
PNP
NPN
Maximum Ratings (per device)
Symbol
Units
Value
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
VCEO
VCBO
VCBO
IC
40
40
6
200
600
40
60
6
200
600
Volts
Volts
Volts
mAmps
mW
Continues Collector Current
Power Dissipation @ TC = 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
PD
Top & Tstg
RθJC
-65 to +200 -65 to +200
0.29 0.29
ºC
ºC/mW
Gullwing (GW)
NOTE: All specifications are subject to change without notification.
Doc
DATA SHEET #: TR0036 B
SCD's for these devices should be reviewed by SSDI prior to release.
SFT390604A2
Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
PNP
NPN
Electrical Characteristic 4/ 5/
Symbol
Units
Limit
Limit
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
IC = 1 mA BVCEO
IC = 10 µA BVCBO
IC = 10 µA BVEBO
40 min
40 min
5 min
40 min
V
V
60 min
5 min
Emitter – Base Breakdown Voltage
Collector Cutoff Current
V
Vce = 30 V, Vbe = 3.0 V
ICEX
ICBO
IEBO
50 max
50 max
50 max
50 max
50 max
50 max
nA
nA
nA
Collector Cutoff Current
Vcb = -30 V
Emitter Cutoff Current
Veb = -3.0 V
DC Forward Current Transfer Ratio *
VCE = 1.0V, IC = 0.1 mA
60 min
80 min
40 min
70 min
V
CE = 1.0V, IC = 1.0 mA
V
CE = 1.0V, IC = 10 mA
HFE
100 - 300
60 min
100 - 300
60 min
V
CE = 1.0V, IC = 50 mA
VCE = 1.0V, IC = 100 mA
30 min
30 min
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
IC = 10mA, IB = 1.0mA
0.25 max
0.20 max
VCE(Sat)
V
V
IC = 50mA, IB = 5.0mA
0.40 max
0.30 max
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.65 to 0.85 0.65 to 0.85
VBE(Sat)
0.95 max
250 min
0.95 max
300 min
Frequency Transition
Output Capacitance
VCE = 20V, IC = 20mA
VCE = 10V, f = 1MHz
VCE = 0.5V, f = 1MHz
fT
cob
cib
MHz
pF
4.5 max
10 max
4.0 max
8.0 max
Input Capacitance
pF
Turn-on Delay Time
td
tr
ts
tf
35 max
35 max
225 max
75 max
35 max
35 max
200 max
50 max
Vcc=3V, IC = 10 mA
IB1 = 1mA, IB2=-1mA
Vbe(off) = 0.5 V
Rise Time
Switch Times
nsec
db
Storage Time
Fall Time
Small Signal Current Gain
VCE = 10V, IC = 1.0 mA
hfe
100 - 400
4.0 max
100 - 400
5.0 max
(f = 1 khz )
Noise Figure
Ic = 100 uA, Vce = 5 V, Rs = 1.0 kΩ, f = 1 khz
NF
NOTES:
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
5/ Negative bias conditions for the PNP device type
Contact Factory.
PIN ASSIGNMENT
Available Part Numbers:
SFT390604A2GW
Package
GW
Pin 1
Pin 2
PNP Device
Base
Pin 3
Pin 4
Pin 5
NPN Device
Base
Pin 6
Collector
Emitter Collector
Emitter
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