SFT4100 [SSDI]
HIGH SPEED NPN TRANSISTOR; 高速NPN晶体管
| 型号： | SFT4100 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | HIGH SPEED NPN TRANSISTOR |
| 文件： | 总2页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT4100 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
15 AMP
DESIGNER’S DATA SHEET
HIGH SPEED
Part Number / Ordering Information 1/
SFT4100 __ __
NPN TRANSISTOR
200 VOLTS
Screening 2/ __ = Not Screen
TX = TX Level
│
│
│
│
│
└
└
TXV = TXV Level
Features:
S
= S Level
• Fast Switching, tf = 60 nsec typ.
• Very Low Leakage and Saturation
• BVCEO 165 Volts Min
• High Linear Gain
• 200ºC Operating Temperature
• Gold Eutectic Die Attach
Package 3/
/3 = TO-3
S1 = SMD1
M = TO254
• Available in hermetic isolated and “hot case” power
packages
• Higher Current Devices Available
Maximum Ratings
Symbol
Value
Units
VCEO
165
Volts
Volts
Volts
Amps
Amps
W
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continues Collector Current
Base Current
VCBO
250
VEBO
7
IC
15
IB
PD
3
Power Dissipation @ TC = 25ºC
Operating & Storage Temperature
120
Top & Tstg
-65 to +200
ºC
Junction to
Case
RθJC
1.46
ºC/W
Maximum Thermal Resistance
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening to MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
TO-254
SMD1
TO-3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0105B
DOC
SFT4100 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic 4/
Symbol
Min
Typ
Max
Units
IC = 200mA
IC = 200µA
IE = 50mA
165
-
200
250
15
––
––
Volts
Volts
Volts
uA
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cutoff Current
BVCEO
BVCBO
BVEBO
ICEO
7
––
VCE = 160 V
––
0.03
1000
VCE = 250 V, VEB = 1.5 V
VCE =250V, VEB =1.5V, TC= 125C
0.01
1.0
1000
5000
––
––
uA
uA
Collector – Cutoff Current
Emitter – Cutoff Current
ICEX
IEBO
VEB = 5 V
0.01
1000
VCE = 4V, IC = 5A
VCE = 4V, IC = 8A
15
8
30
30
45
––
DC Current Gain *
––
hFE
IC = 5.0A, IB = 500mA
IC = 8.0A, IB = 1.0A
––
––
0.25
0.35
1.2
1.6
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Volts
Volts
VCE(Sat)
IC = 8.0A, IB = 1.0A
––
1.12
20
2.0
––
VBE(Sat)
fT
VCE = 15V, IC = 1.0A, f = 10MHz
VClamp = 200V, L = 500 uH
8
8
MHz
A
Current Gain Bandwidth Product
Clamped ES/B Collector Current
VCE = 30V, IC = 4.0A, t = 1s
VCE = 135V, IC = 0.15A, t= 1s
SOA1
SOA2
Safe Operating Area
––
––
––
100
1200
60
1000
1700
800
nsec
nsec
nsec
ON Time
tON
tS
V
CC = 150V,
IC = 8A,
Storage Time
Fall Time
IB1 = IB2 = 1A
tf
CASE OUTLINES:
SMD1
TO-3
TO-254
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0105B
DOC
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