SFT3906A2GW [SSDI]
Dual Microminiature Package 800 mA 75 Volts Dual PNP Transistor; 双超小型封装800毫安75伏双PNP晶体管
| 型号： | SFT3906A2GW |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Dual Microminiature Package 800 mA 75 Volts Dual PNP Transistor |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT3906A2
Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Dual Microminiature Package
800 mA 75 Volts
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
Dual PNP Transistor
SFT3906A2
__ __
Screening 2/ __ = Commercial
TX = TX Level
Features:
TXV = TXV Level
S = S Level
· High Speed Switching Transistor
· Multiple Devices Reduce Board Space
· High Power Dissipation: Up to 600 mW / device
· Replacement for 2N3904AU
Package GW = Gullwing
· TX, TXV, S-Level screening available
· NPN complimentary parts available (SFT3904A2)
Maximum Ratings
Symbol
Value
Units
VCEO
VCBO
40
Volts
Volts
Volts
mAmps
mW
Collector – Emitter Voltage
Collector – Base Voltage
40
6
VCBO
Emitter – Base Voltage
Continues Collector Current
IC
200
Power Dissipation @ TC = 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance (Junction to Case)
PD
600
Top & Tstg
RèJC
-65 to +200
0.29
ºC
ºC/mW
Gullwing (GW)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
Doc
DATA SHEET #: TR0038 A
SFT3906A2
Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic 4/
Symbol
Min
-40
-40
-5
Max
––
Units
Volts
Volts
Volts
nA
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
IC = 1 mA
IC = 10 µA
BVCEO
BVCBO
BVEBO
ICEX
––
IC = 10 µA
––
Emitter – Base Breakdown Voltage
Collector Cutoff Current
Vce = -30 V, Vbe = 3.0 V
Vcb = -30 V
––
50
––
50
nA
Collector Cutoff Current
ICBO
Veb = -3.0 V
––
50
nA
Emitter Cutoff Current
IEBO
DC Forward Current Transfer Ratio *
VCE = -1.0V, IC = 0.1 mA
VCE = -1.0V, IC = 1.0 mA
VCE = -1.0V, IC = 10 mA
VCE = -1.0V, IC = 50 mA
VCE = -1.0V, IC = 100 mA
60
80
100
60
––
––
300
––
HFE
30
––
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
––
––
-0.25
-0.40
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Volts
Volts
VCE(Sat)
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
-0.65
––
-0.85
-0.95
VBE(Sat)
VCE = -20V, IC = 20mA
VCE = -10V, f = 1MHz
VCE = -0.5V, f = 1MHz
250
––
––
4.5
10
MHz
pF
Frequency Transition
Output Capacitance
fT
cob
cib
––
pF
Input Capacitance
––
––
––
––
35
35
225
75
Turn-on Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
Vcc=-3V, IC = 10 mA
IB1 = 1mA, IB2=-1mA
Vbe(off) = 0.5 V
n sec
db
Switch Times
Small Signal Current Gain
VCE = -10V, IC = 1.0 mA
100
––
400
4.0
hfe
(f = 1 khz )
Noise Figure
Ic = 100 uA, Vce = -5 V, Rs = 1.0 kÙ, f = 1 khz
NF
2/ Screening per MIL-PRF-19500
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
3/ For Package Outlines Contact Factory.
1/ For Ordering Information, Price, and Availability Contact
Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
PIN ASSIGNMENT
Available Part Numbers:
Package
Pin 1
Collector1
Pin 2
Pin 3
Pin 4
Pin 5
Pin 6
SFT3906A2GW
Base1
Emitter1 Collector2
Base2
Emitter2
GW
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