DDB2503-220 [SKYWORKS]
Mixer Diode, Low Barrier, 700ohm Z(V) Max, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE 220, 2 PIN;
| 型号： | DDB2503-220 |
| 厂家： | 
SKYWORKS SOLUTIONS INC. |
| 描述： | Mixer Diode, Low Barrier, 700ohm Z(V) Max, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE 220, 2 PIN 二极管 |
| 文件： | 总9页 (文件大小：677K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips
and Beam Leads
Applications
Detectors
Mixers
Features
Available in both P-type and N-type low barrier designs
Low 1/f noise
Large bond pad chip design
Planar passivated beam-lead and chip construction
efficiency during manual operations, and is ideal for automated
assembly.
Packages rated MSL1, 260 C per JEDEC J-STD-020)
The choice of N- and P-type silicon allows the designer to
optimize the silicon material for the intended application:
Skyworks Pb-free products are compliant with
all applicable legislation. For additional
information, refer to Skyworks Definition of
Lead (Pb)-Free, document number SQ04-0073.
Doppler mixers and high-sensitivity detectors benefit from using
the low noise characteristics of the P-type silicon.
Low conversion loss mixers and biased detectors can be
designed using standard N-type material.
Description
Skyworks packaged, beam-lead and chip Schottky barrier
detector diodes are designed for applications through 40 GHz in
the Ka band. They are made by the deposition of a suitable barrier
metal on an epitaxial silicon substrate to form the junction. The
process and choice of materials result in low series resistance
along with a narrow spread of capacitance values for close
impedance control. P-type silicon is used to obtain superior 1/f
noise characteristics. N-type silicon is also available.
Applications
These diodes are categorized by Tangential Signal Sensitivity
(TSS) for detector applications in four frequency ranges: S, X, Ku,
and Ka bands. However, they can also be used as modulators,
high-speed switches, and low-power limiters.
TSS is a parameter that describes a diode’s detector sensitivity. It
is defined as the amount of signal power, below a one-milliwatt
reference level, required to produce an output pulse with an
amplitude sufficient to raise the noise fluctuations by an amount
equal to the average noise level. TSS is approximately 4 dB above
the minimum detectable signal.
Packaged diodes are suitable for use in waveguide, coaxial, and
stripline applications. Beam-lead and chip diodes can also be
mounted in a variety of packages or on special customer
substrates.
The P-type Schottky diodes in this Data Sheet are optimized for
low noise in the 1/f region. They require a small forward bias (to
reduce video resistance) if efficient operation is required. The bias
not only increases sensitivity but also reduces parameter variation
due to temperature change. Video impedance is a direct function
of bias and follows the 26/l (mA) relationship. This is important to
pulse fidelity, since the video impedance together with the
detector output capacitance affects the effective amplifier
bandwidth.
Unmounted beam-lead diodes are especially well suited for use in
Microwave Integrated Circuit (MIC) applications. Mounted beam-
lead diodes can be easily used in MIC, stripline, or other such
circuitry.
These “universal chips” are designed for a high degree of device
reliability in both commercial and industrial uses. The offset bond
pad assures that no mechanical damage occurs at the junction
during the wire bonding. Additionally, the 4 mil bond pad
eliminates performance variation due to bonding, improves
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200847F • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 30, 2013
1
SILICON SCHOTTKY BARRIER DIODES
Bias does, however, increase typical noise, particularly in the 1/f
region. Therefore, it should be kept as low as possible (typically 5
to 50 μA).
Wire Bonding
Two methods can be used to connect wire, ribbon, and wire mesh
to the chips:
Thermocompression
Ballbonding
Assembly and Handling Procedure
Die Attach Methods
Skyworks recommends use of pure gold wire (0.7 to 1.25 mil
diameter).
Universal chips are compatible with both eutectic and conductive
epoxy die attach methods.
Electrical and physical specifications for the silicon Schottky
barrier diodes are provided in Tables 1 through 6. SPICE model
parameters are defined in Table 7. Typical performance
characteristics are shown in Figures 1 through 4. Typical video
detector circuits are shown in Figure 5.
Eutectic composition preforms of Au/Sn or Au/Ge are useful when
soldering devices in circuit. Gold/silicon eutectic die attachments
can be accomplished by scrubbing the chip directly to the gold
plated bonding area.
Epoxy die attachments with silver or gold filled conductive epoxies
can also be used when thermal heat sinking is not a requirement.
Table 1. Electrical Specifications: Beam-Lead P-Type Detector Schottky Diodes (Note 1)
Electrical Characteristics
TSS
Test
Frequency
(GHz)
Frequency
Band
RV
CJ @ 0 V
(pF)
Outline
Drawing
Part Number
(dBm)
VF @ 1 mA
(mV)
Vb @ 10 μA
(V)
(Ω)
(Note 2)
Typ.
+50
+48
Min.
500
500
Max.
700
Max.
0.15
0.10
0.10
X
Ku
K
DDB2503-000
DDB2504-000
DDB2265-000
200-350
200-350
300-450
2
2
3
10.00
16.00
24.15
491-006
491-006
491-006
700
+50
800
1200
(Note 3)
(Note 3)
(Note 3)
Note 1: Performance is guaranteed only under the conditions listed in this Table.
Note 2: Bias = 50 μA
Video bandwidth = 10 MHz.
Note 3: Bias = 30 μA
Table 2. Epoxy and Hermetic Packaged Beam-Lead P-Type Detector Schottky Diodes
Part Numbers/Outline Drawings
Epoxy Stripline
250
Epoxy Stripline
230
Hermetic Stripline
220
DDB2503-250
DDB2504-250
DDB2265-250
DDB2503-230
DDB2504-230
DDB2265-230
DDB2503-220
DDB2504-220
DDB2265-220
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
September 30, 2013 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 200847F
2
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Table 3. Electrical Specifications: P-Type Detector Schottky Diode Universal Chips
Electrical Characteristics
TSS
(dBm)
(Note 1)
RT @ 10 mA
(Ω)
(Note 2)
Frequency
Band
RV
(Ω)
CJ @ 0 V
(pF)
VB @ 10 μA
Outline
Drawing
Part Number
Barrier
VF @ 1 mA
(mV)
(V)
Typ.
537
735
Min.
+40
Max.
0.15
0.10
Max.
30
Min.
Ku
K
CDB7620-000
CDB7619-000
Low
Low
250-350
275-375
2
3
571-006
571-006
+50 (Note 3)
40
Note 1: Bias = 50 μA
Video bandwidth = 10 MHz
RV = 2800 Ω
Note 2: Rt is the slope resistance @ 10 mA. The maximum series resistance (Rs) is calculated as: Rs = Rt – 2.8.
Note 3: Bias = 30 μA
Table 4. Hermetic Packaged P-Type Detector Schottky Diode Chips
Part Numbers/Outline Drawings
Hermetic Pill
207
Hermetic Pill
203
CDB7620-207
CDB7619-207
CDB7620-203
CDB7619-203
Table 5. Electrical Specifications: N-Type Detector Schottky Diode Chips
Electrical Characteristics
RV
(Ω)
Frequency
Band
CJ @ 0 V
(pF)
RT @ 10 mA
VB @ 10 μA
Outline
Drawing
Part Number
VF @ 1 mA
(mV)
(Ω)
Max.
10
(V)
Barrier
Max.
0.30
0.10
0.15
0.10
0.15
Min.
Typ.
245
680
–
X
K
CDF7623-000
CDF7621-000
CME7660-000
CDE7618-000
CDP7624-000
Low
Low
240-300
270-350
350-450
375-500
450-575
2
2
3
3
3
571-011
571-011
571-011
571-011
571-011
20
Ku
K
Medium
Medium
Medium/High
10
20
–
Ku
15
–
Table 6. Hermetic Packaged Beam-Lead N-Type Detector Schottky Diode Chips
Part Numbers/Outline Drawings
Hermetic Ceramic Pill
207
Hermetic Ceramic Pill
203
CDF7623-207
CDF7621-207
CME7660-207
CDE7618-207
CDP7624-207
CDF7623-203
CDF7621-203
CME7660-203
CDE7618-203
CDP7624-203
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200847F • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 30, 2013
3
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Table 7. SPICE Model Parameters
Parameter
Units
Part Number
CDF7621-000
CDB7620-000
4E-08
4
CDC7623-000
1.1E-07
5
CDB7619-000
3E-08
30
IS
RS
N
A
Ω
–
9E-08
6
1.20
1.10
1E-11
0.11
0.30
0.69
2
1.10
1.04
TT
CJO
M
sec
pF
–
1E-11
0.15
1E-11
0.20
1E-11
0.11
0.35
0.30
0.32
EG
XTI
FC
BV
IBV
VJ
eV
–
0.69
0.69
0.69
2
2
2
–
0.5
0.5
0.5
0.5
V
10
2.5
2.5
3.0
A
1E-05
0.495
1E-05
0.510
1E-05
0.510
1E-05
0.540
V
Typical I-V Characteristics
10–1
10–2
10–1
10–2
10–3
10–3
10–4
10–5
10–6
10–4
10–5
10–6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward Voltage (V)
Forward Voltage (V)
Figure 1. CDF7621-000
Figure 2. CDB7619-000
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Typical Performance Data
10000.00
1000.00
100.00
10.00
RL = 1 MΩ
10000.00
R
L
= 10 kΩ
RL = 1 kΩ
RL = 1 MΩ
RL = 1 kΩ
50 μA
50 μA
1000.00
100.00
10.00
1.00
RL = 100 Ω
RL
= 100 kΩ
5 μA
RL = 10 Ω
RL = 10 Ω
5 μA
RL = 1 Ω
1.00
Test Conditions:
f = 9.375 GHz
Test Conditions:
f = 9.375 GHz
DC Bias = 0
5 μA
–20
0.10
0.10
–30
–10
0
+10
+20
–30
–20
–10
0
+10
+20
Input Power (dBm)
Input Power (dBm)
Figure 3. Voltage Output vs Input Power as a Function of Load
Resistance
Figure 4. Voltage Output vs Input Power as a Function of Load
Resistance and Bias
Shipping Information
Unbiased
RF Bypass
Input
Video Output
Individual Chips
Skyworks silicon Schottky barrier diodes are provided in waffle
packs for bare die and in gel-pack carriers for beamlead devices.
Load Resistor
DC Return
Package dimensions are provided in Figures 6 through 13.
Bias Supply
Biased
RF Bypass
Input
Video Output
Load Resistor
DC Return
Multi-Octave–High Sensitivity
Unbiased
RF Bypass
Input
Video Output
Load Resistor
Bias Supply
Biased
RF Bypass
Input
Video Output
Load Resistor
50 Ω
Broadband–Low Sensitivity
Figure 5. Typical Video Detector Circuits
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200847F • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 30, 2013
5
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Schematic
N-Type
1
1
0.050 (1.27 mm)
0.040 (1.02 mm)
2
2
0.055 (1.40 mm)
0.051 (1.30 mm)
Dia.
S1569
Figure 6. -203 Package Dimensions
Schematic
Schematic
P-type
N-type
0.086 (2.18 mm)
Max. Dia.
0.064 (1.63 mm)
0.060 (1.52 mm)
Dia. 2 Plcs.
Metal
Ceramic
0.200 (5.08 mm)
Nom.
0.076 (2.10 mm)
0.006 (1.78 mm)
Metal
0.062 (1.63 mm)
0.002 (1.52 mm)
2 Plcs
Figure 7. -207 Package Dimensions
Schematic
2
1
-011 (220)
0.185 (4.70 mm)
0.145 (3.68 mm)
3 Plcs.
0.068 (1.73 mm)
0.064 (1.63 mm)
Dia.
0.022 (0.56 mm)
0.018 (0.46 mm)
3 Plcs.
Colored Dot
Denotes Cathode
0.070 (1.78 mm)
Sq.
0.042 (1.07 mm)
0.028 (0.71 mm)
0.005 (0.13 mm)
0.003 (0.08 mm)
3 Plcs.
Figure 8. -220 Package Dimensions
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Schematic
1
2
2
Colored Dot
0.090 (2.29 mm)
Min. 2 Plcs.
Denotes Cathode
1
0.013 (0.33 mm)
0.017 (0.43 mm)
2 Plcs.
50 Deg.
40 Deg.
Epoxy Encapsulation
Au-Plated Leads
0.030
(0.76 mm)
Max.
0.003 (0.08 mm)
0.005 (0.13 mm)
0.008 (0.20 mm)
0.012 (0.30 mm)
Ceramic Base
0.051 (1.30 mm)
0.055 (1.40 mm)
Figure 9. -230 Package Dimensions
Schematic
1
2
0.100 (2.54 mm)
Dia.
0.090 (2.28 mm)
0.110 (2.79 mm)
2 Plcs.
Colored Dot
Denotes Cathode
1
2
0.018 (0.45 mm)
0.122 (0.55 mm)
2 Plcs.
50 Deg.
40 Deg.
Epoxy Encapsulation
Au-Plated Leads
0.018 (0.45 mm)
0.122 (0.55 mm)
0.003 (0.08 mm)
0.005 (0.13 mm)
0.050 (1.27 mm)
Max.
Figure 10. -250 Package Dimensions
0.013 (0.33 mm)
0.011 (0.28 mm)
0.011 (0.28 mm)
0.009 (0.23 mm)
0.006 (0.15 mm)
0.004 (0.10 mm)
2 Plcs.
0.009 (0.23 mm)
0.007 (0.18 mm)
0.009 (0.23 mm)
0.007 (0.18 mm)
0.006 (0.015 mm)
0.003 (0.005 mm)
0.0025 (0.06 mm)
Max.
Top View
Schematic
Figure 11. 491-006 Package Dimensions
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200847F • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 30, 2013
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Cathode/Bonding Pad
Diameter 0.0035 to 0.0045 (0.089 mm to 0.114 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0085 (0.216 mm)
0.0065 (0.165 mm)
Backside Contact (Anode)
Gold Metallization
Dimensions are in inches (millimeters shown in parentheses)
S3181
Figure 12. 571-006 Package Dimensions
Anode/Bonding Pad
Diameter 0.0035 to 0.0045 (0.089 mm to 0.114 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0085 (0.216 mm)
0.0065 (0.165 mm)
Dimensions are in inches (millimeters shown in parentheses)
S3182
Figure 13. 571-011 Package Dimensions
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
September 30, 2013 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 200847F
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Copyright © 2002-2009, 2011-2013 Skyworks Solutions, Inc. All Rights Reserved.
Information in this document is provided in connection with Skyworks Solutions, Inc. (“Skyworks”) products or services. These materials, including the information contained herein, are provided by
Skyworks as a service to its customers and may be used for informational purposes only by the customer. Skyworks assumes no responsibility for errors or omissions in these materials or the
information contained herein. Skyworks may change its documentation, products, services, specifications or product descriptions at any time, without notice. Skyworks makes no commitment to
update the materials or information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from any future changes.
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Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200847F • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 30, 2013
9
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