DDB2504-250 [SKYWORKS]
Mixer Diode, Low Barrier, 700ohm Z(V) Max, Silicon, ROHS COMPLIANT, PLASTIC, CASE 250, 2 PIN;
| 型号： | DDB2504-250 |
| 厂家： | 
SKYWORKS SOLUTIONS INC. |
| 描述： | Mixer Diode, Low Barrier, 700ohm Z(V) Max, Silicon, ROHS COMPLIANT, PLASTIC, CASE 250, 2 PIN 二极管 |
| 文件： | 总6页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Schottky Barrier Detector Diodes
Features
3
Both P–Type and N–Type Low Barrier Silicon
Available
Low 1/f Noise
Bonded Junctions for Reliability
Planar Passivated Beam–Lead and Chip
Construction
See Also Zero Bias Silicon Schottky Barrier
Detector Diodes
Description
Alpha packaged, beam–lead and chip Schottky
barrier detector diodes are designed for applications
through 40 GHz in Ka–band. They are made by the
deposition of a suitable barrier metal on an epitaxial
silicon substrate to form the junction. The process
and choice of materials result in low series resistance
along with a narrow spread of capacitance values for
close impedance control. P–type silicon is used to
obtain superior 1/f noise characteristics. N–type
silicon is also available.
The “Universal Chips” are designed for a high degree
of device reliability in both commercial and industrial
uses. The offset bond pad assures that no
mechanical damage will occur at the junction during
the wire bonding. Additionally the 4 mil bond pad
eliminates performance variation due to bonding and
is ideal for automated assembly, and improves
efficiency during manual operations as well.
The choice on “N” and “P” type silicon allows for the
designer to optimize the silicon material for the
intended application.
The packaged diodes are suitable for use in
waveguide, coaxial, and stripline applications.
The beam–lead and chip diodes can also be mounted
in a variety of packages or on special customer
substrates.
Doppler mixers, high sensitivity detectors will
benefit from using the low noise characteristics
of the “P” type silicon.
Unmounted beam–lead diodes are especially well
suited for use in MIC applications. Mounted
beam–lead diodes can be easily used in MIC,
stripline or other such circuitry.
Low conversion loss mixers and biased
detectors can be designed using standard “N”
type material.
Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com
3–33
Silicon Schottky Barrier Detector Diodes
Applications
These diodes are categorized by TSS (Tangential
Signal Sensitivity) for detector applications in four
frequency ranges: S, X, Ku, and Ka–band. However,
they can also be used as modulators, high speed
switches and low power limiters. RF parameters on
chips and beam–lead diodes are tested on a sample
basis, while breakdown voltage and capacitance
measurements are 100% tested. Packaged diodes
are 100% RF tested.
Bias does, however, increase noise, particularly in
the 1/f region. Therefore, it should be kept at as low
a level as possible (typically 5–50 microamps).
Voltage output versus power input as a function of
load resistance and bias is shown in Figures 1a
and 1b.
Assembly and Handling Procedure
Die Attach Methods
TSS is the one parameter that best describes a
diode’s use as a video detector. It is defined as the
amount of signal power, below a one milliwatt
reference level, required to produce an output pulse
whose amplitude is sufficient to raise the noise
fluctuations by an amount equal to the average noise
level. TSS is approximately 4 dB above the Minimum
Detectable Signal.
All universal chips are compatible with both eutectic
and conductive epoxy die attach methods.
Eutectic composition preforms of Au/Sn or Au/Ge are
useful when soldering devices in circuit. Gold/silicon
eutecticdieattachcanbeaccomplishedbyscrubbing
the chip directly to the gold plated bonding area.
Epoxy die attach with silver or gold filled conductive
epoxies, canalsobeusedwherethermalheatsinking
is not a requirement.
The Schottky barrier diodes in this data sheet are of
P–type construction and are optimized for low noise,
particularly in the 1/f region. They require a small
forward bias (to overcome the barrier potential) if
efficient operation is required, especially at power
levels below –20 dBm. Bias not only increases
sensitivity but also greatly reduces parameter
Wire Bonding
Two methods can be used to connect wire, ribbon, or
wire mesh to the chips:
variation due to temperature change.
Video
Thermocompression
Ballbonding
impedance is a direct function of bias and closely
follows the 28/l (mA) relationship. This is important
to pulse fidelity, since the video impedance in
conjunction with the detector output capacitance
affects the effective amplifier bandwidth.
Alpha recommends use of pure gold wire (0.7 – 1.25 mil
diameter).
Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com
3–34
Silicon Schottky Barrier Detector Diodes
Electrical Specifications at 25
“P” Type Detectors
°
C
207
220
V
250
Beam–Lead
Electrical
Characteristics
Test
Conditions
Outline
Drawing
Number
TSS –
dBm
Z
Gamma
(l)
C
J
@ 0V
(pF)
V
R
T
@ 10 mA
(Ohms)
Frequency
GHz
IF
F
B
Frequency
Band
Part
1,2
(Ohms)
@ 1 mA
(mv)
@ 10 µA
(V)
Number
Min.
Min.
Max.
Max.
X
Ku
K
DDB2503–000
DDB2504–000
DDB2265–000
50
48
500
500
700
700
0.15
0.10
0.10
200–350
200–350
300–450
2
2
3
10
16
491–006
491–006
491–006
3
3
3
3
50
800
1200
24.15
Chip
Ku
K
CDB7620–000
CDB7619–000
40
500
500
700
700
8000
5000
0.15
0.10
250–350
300–450
30
40
2
3
16
526–006
526–006
3
50
24.15
Packaged Diodes
Ku
K
CDB7620–207
CDB7619–207
DDB2503–250
DDB2504–250
DDB2265–250
DDB2265–220
40
50
50
48
500
500
500
500
700
700
8000
5000
0.15
0.10
0.15
0.10
0.10
0.10
300–350
300–450
200–350
200–350
300–450
300–450
30
40
2
3
2
2
3
3
16
24.15
10
207
207
250
250
250
220
X
700
Ku
K
700
16
3
3
3
3
50
800
800
1200
1200
40
40
24.15
24.15
3
3
K
50
“N” Type Detectors
Electrical Characteristics
@ 0V
Drive
Level
V
F
C
J
R
T
V
B
@ 10 uA
(V)
Frequency
Band
Part
Number
@ 1 mA
(mv)
(pF)
@ 10 mA
(Ohms)
Max.
X
K
CDF7623–000
CDF7621–000
CME7660–000
CDE7618–000
CDP7624–000
Low
Low
240–300
270–350
350–450
375–500
450–575
0.30
0.10
0.15
0.10
0.15
10
20
10
20
15
2
2
3
3
3
Ku
K
Med
Med
Ku
Med/High
1. Bias = 50 µA.
2. Video Bandwidth = 10 MHz.
3. Bias = 30 µA.
4.
R
V
= 2800 Ohms.
Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com
3–35
Silicon Schottky Barrier Dector Diodes
–1
10
Spice Model Parameters
–2
–3
10
10
10
Part Number
CDC7630–000
CDF7621–000
CDB7619–000
Parameter
Unit
A
I
S
8E–08
6
3E–06
26
3E–09
26
R
Ohm
–
S
n
1.04
1E–11
0.11
0.3
1.04
1E–11
0.1
1.04
1E–11
0.11
0.32
0.69
0.54
2
–4
T
D
s
C 0
J
pF
–
m
0.25
0.69
0.34
2
–5
10
10
E
G
eV
–
0.69
0.51
2
V
J
–6
X
TI
–
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V (Volts)
F
FC
–
0.5
0.5
0.5
B
V
2.5
2
3
V
CDC7630–000
IBV
A
1E–05
0.001
1E–05
–1
10
–2
–3
10
10
10
Typical I–V Characteristics
–1
10
–2
10
–4
–3
10
–5
10
10
–4
10
–6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V (Volts)
F
–5
10
CDB7619–000
–6
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V (Volts)
F
Shipping Information
Individual Chips
CDF7621–000
Standard packaging procedures at Alpha are for
“wafflepack” delivery. Devices can also be packaged
on “GelPack” carriers.
Wafer Shipment for Whole Wafer
Packagingoptionsincludedeliveryfordevicesonfilm
frame where wafer is sawn on wafer gel pack for
uncut, unsawn wafer.
Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com
3–36
Silicon Schottky Barrier Detector Diodes
Typical Performance Data
R
= 10KΩ
a) Unbiased
L
10000.00
1000.00
100.00
10.00
RF Bypass
Input
Video Output
R
= 1MΩ
L
R
= 100KΩ
L
R
= 1KΩ
L
Load Resistor
R
= 100Ω
L
DC Return
R
= 10Ω
L
Bias Supply
R
= 1Ω
3
a) Biased
L
1.00
RF Bypass
Input
Video Output
Test Conditions:
F=9.375 GHz
DC Bias = 0
0.10
Load Resistor
–30
–20
–10
0
10
20
DC Return
Power Input, dBm
Multi Octave–High Sensitivity
Figure 1a. Voltage Output vs. Power Input as a
Function of Load Resistance
a) Unbiased
RF Bypass
R
= 1MΩ
L
10000.00
1000.00
100.00
10.00
Input
Video Output
Load Resistor
R
= 1KΩ
L
50 µA
50 µA
5 µA
R
= 10Ω
L
Bias Supply
a) Biased
5 µA
RF Bypass
Input
Video Output
Load Resistor
1.00
Test Conditions:
F=9.375 GHz
5 µA
0.10
50Ω
–30
–20
–10
0
10
20
Power Input, dBm
Broadband–Low Sensitivity
Figure 1b. Voltage Output vs. Power Input as a
Function of Load Resistance and Bias
Figure 2. Typical Video Detector Circuits
Frequency Table
Band
UHF
Frequencies (GHz)
Up to 1
L
1 – 2
S
2 – 4
C
4 – 8
X
Ku
K
Ka
mm
8.2 – 12.4
12.4 – 18
18.0 – 26.5
26.5 – 40
40 – 100
Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com
3–37
Silicon Schottky Barrier Detector Diodes
Outline Drawings
491–006
526–006, 526–011
526–006 = Cathode Bond Pad
526–011 = Anode Bond Pad
0.015 (0.38 mm)
0.013 (0.33 mm)
0.015 (0.38 mm)
0.013 (0.33 mm)
Bonding Pad
(526–006 Cathode)
526–011 Anode)
Diameter 0.0035 – 0.004
0.0085 (0.216 mm)
0.0065 (0.165 mm)
Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com
3–38
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