SGA-2263Z [SIRENZA]
DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier; DC -5000兆赫，可级联的SiGe HBT MMIC放大器
| 型号： | SGA-2263Z |
| 厂家： | 
SIRENZA MICRODEVICES |
| 描述： | DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier |
| 文件： | 总5页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGA-2263
Product Description
RoHS Compliant
& Green Package
Pb
SGA-2263Z
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
The SGA-2263 is a high performance SiGe HBT MMIC Ampli-
fier. A Darlington configuration featuring 1 micron emitters
provides high F and excellent thermal perfomance. The
T
heterojunction increases breakdown voltage and minimizes
leakage current between junctions. Cancellation of emitter
junction non-linearities results in higher suppression of
intermodulation products. Only 2 DC-blocking capacitors, a
bias resistor and an optional RF choke are required for op-
eration.
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. This package
is also manufactured with green molding compounds that
contain no antimony trioxide nor halogenated fire retardants.
• High Gain : 13.8 dB at 1950 MHz
• Cascadable 50 Ohm
Gain & Return Loss vs. Freq. @TL=+25°C
• Operates From Single Supply
• Low Thermal Resistance Package
24
18
12
6
0
-10
-20
-30
-40
Applications
GAIN
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
IRL
ORL
• Wireless Data, Satellite
0
0
1
2
3
4
5
Frequency (GHz)
Symbol
Parameter
Small Signal Gain
Units
Frequency
Min.
Typ.
Max.
850 MHz
1950 MHz
2400 MHz
13.2
14.7
13.5
13.2
16.2
G
dB
850 MHz
1950 MHz
7.5
6.1
P1dB
Output Power at 1dB Compression
Output Third Order Intercept Point
dBm
dBm
850 MHz
1950 MHz
20.2
18.0
OIP3
Bandwidth
IRL
Determined by Return Loss (>10dB)
Input Return Loss
MHz
dB
dB
dB
V
5000
17.6
25.3
3.5
1950 MHz
1950 MHz
1950 MHz
ORL
Output Return Loss
NF
Noise Figure
Device Operating Voltage
1.9
17
2.2
2.5
23
VD
ID
Device Operating Current
mA
20
Thermal Resistance (junction to lead)
°C/W
255
RTH, j-l
VS = 5 V
RBIAS = 140 Ohms TL = 25ºC
ID = 20 mA Typ.
OIP3 Tone Spacing = 1 MHz, Pout per tone = -10 dBm
ZS = ZL = 50 Ohms
Test Conditions:
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100626 Rev E
SGA-2263 DC-5000 MHz Cascadable MMICAmplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
850
Symbol
G
Parameter
Small Signal Gain
Unit
dB
100
500
14.9
20.4
7.6
1950
13.5
18.0
6.1
2400
13.2
16.9
5.4
3500
14.7
20.2
7.5
OIP3
P1dB
IRL
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
dBm
dBm
dB
21.3
24.1
17.8
21.5
23.0
18.5
3.3
19.6
27.8
18.7
3.2
17.6
25.3
19.1
3.5
17.2
23.4
19.2
4.0
15.0
26.7
19.2
ORL
S12
Output Return Loss
dB
Reverse Isolation
dB
NF
Noise Figure
dB
V = 5 V
S
I = 20 mA Typ.
D
OIP Tone Spacing = 1 MHz, Pout per tone = -10 dBm
3
Z = Z = 50 Ohms
SL
Test Conditions:
R
= 140 Ohms T = 25ºC
BIASL
Absolute Maximum Ratings
Parameter
Absolute Limit
Noise Figure vs. Frequency
VD= 2.2 V, ID= 20 mA
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
40 mA
4 V
5
4
3
2
1
0
+18 dBm
+150°C
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
-40°C to +85°C
+150°C
Max. Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
TL=+25ºC
0
0.5
1
1.5
2
2.5
3
Bias conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
Frequency (GHz)
OIP3 vs. Frequency
VD= 2.2 V, ID= 20 mA
P1dB vs. Frequency
VD= 2.2 V, ID= 20 mA
10
8
30
25
20
15
10
6
4
2
TL=+25ºC
2.5
TL=+25ºC
0
0
0.5
1
1.5
2
3
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Frequency (GHz)
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100626 Rev E
SGA-2263 DC-5000 MHz Cascadable MMICAmplifier
Preliminary
Typical RF Performance Over Temperature ( Bias: VD= 2.2 V, ID= 20 mA (Typ.) )
|S21| vs. Frequency
|S11| vs. Frequency
24
18
12
6
0
-10
-20
-30
-40
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
TL
TL
0
0
1
2
3
4
5
0
1
2
3
4
5
Frequency (GHz)
Frequency (GHz)
|S12| vs. Frequency
|S22| vs. Frequency
-10
-15
-20
-25
-30
0
-10
-20
-30
-40
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
TL
TL
0
1
2
3
4
5
0
1
2
3
4
5
Frequency (GHz)
Frequency (GHz)
NOTE: Full S-parameter data available at www.sirenza.com
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100626 Rev E
SGA-2263 DC-5000 MHz Cascadable MMICAmplifier
Preliminary
BasicApplication Circuit
Application Circuit Element Values
RBIAS
Frequency (Mhz)
VS
Reference
Designator
500
850
1950
2400
3500
1000
pF
CD
1 uF
CB
CD
LC
220 pF 100 pF
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
100 pF
68 nH
68 pF
33 nH
LC
1,2
3 SGA-2263
6
Recommended Bias Resistor Values for ID=20mA
RF in
RF out
R
Supply Voltage(VS)
RBIAS
BIAS=( VS-VD ) / ID
CB
CB
4,5
5 V
140
6 V
200
8 V
300
10 V
390
VS
Note: RBIAS provides DC bias stability over temperature.
1 uF
RBIAS
1000 pF
CD
Mounting Instructions
LC
1. Use a large ground pad area near device pins 1, 2,
4, and 5 with many plated through-holes as shown.
CB
CB
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Pin # Function
Description
3
RF IN
RF input pin. This pin requires the use of
an external DC blocking capacitor
chosen for the frequency of operation.
Part Identification Marking
1, 2, 4,
5
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
6 5 4
6 5 4
6
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
A22
A22Z
1 2 3
1 2 3
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Part Number Ordering Information
Part Number
SGA-2263
SGA-2263Z
Reel Size
7"
Devices/Reel
3000
7"
3000
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-100626 Rev E
4
SGA-2263 DC-5000 MHz Cascadable MMICAmplifier
SOT-363 PCB Pad Layout
Preliminary
Dimensions in inches [millimeters]
RF
OUT
RF
I N
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
SOT-363 Nominal Package Dimensions
Dimensions in inches [millimeters]
A link to the SOT-363 package outline drawing with full dimensions and
tolerances may be found on the product web page at www.sirenza.com.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-100626 Rev E
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