SGA-2363-TR1 [STANFORD]
DC-2800 MHz Silicon Germanium HBT Cascadeable Gain Block; DC -2800 MHz的硅锗HBT可级联增益模块
| 型号： | SGA-2363-TR1 |
| 厂家： | 
STANFORD MICRODEVICES |
| 描述： | DC-2800 MHz Silicon Germanium HBT Cascadeable Gain Block |
| 文件： | 总7页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
Product Description
SGA-2363
Stanford Microdevices’ SGA-2363 is a high performance
cascadeable 50-ohm amplifier designed for operation from
a 2.7-volt supply. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with FT up to 50 GHz.
DC-2800 MHz Silicon Germanium
HBT Cascadeable Gain Block
This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-2363 requires only DC
blocking and bypass capacitors for external components.
Product Features
• DC-2800 MHz Operation
• 2.7V Single Voltage Supply
•High Output Intercept: +20.0dBm typ. at 850 MHz
•Low Noise Figure: 2.9 dB typ. at 850 MHz
Small Signal Gain vs. Frequency
24
18
dB 12
Applications
• Broadband Gain Blocks
• Cordless Phones
6
0
• IF/ RF Buffer Amplifier
• Drivers for CATV Amplifiers
Frequency MHz
Parameters: Test Conditions:
Symbol
Units
Min.
Typ.
Max.
Z0 = 50 Ohms, Id = 20 mA, T = 25ºC
f = 850 MHz
f = 1950 MHz
dBm
dBm
8.2
7.2
Output Power at 1dB Compression
Small Signal Gain
P1dB
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 2000 - 2800 MHz
dB
dB
dB
15.7
17.5
16.7
15.5
S21
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 2000 - 2800 MHz
dB
dB
dB
20.9
21.3
21.2
Reverse Isolation
S12
f = DC - 2000 MHz
f = 2400 - 2800 MHz
1.4:1
1.5:1
Input VSWR
-
-
S11
S22
IP3
NF
f = DC - 2000 MHz
f = 2000 - 2800 MHz
1.3:1
1.2:1
Output VSWR
Third Order Intercept Point
Power out per Tone = -10 dBm
f = 850 MHz
f = 1950 MHz
dBm
dBm
19.4
20.4
f = DC - 1000 MHz
f = 1000 - 2400 MHz
dB
dB
2.9
3.4
Noise Figure
Group Delay
f = 1000 MHz
pS
V
107
2.7
TD
Device Voltage
2.4
3.0
VD
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100628 Rev A
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
Specification
Test
Parameter
Min
Typ.
Max.
Unit
Condition
Bandwidth
Frequency Range
T= 25C
T= 25C
DC
2800
MHz
Device Bias
Operating Voltage
Operating Current
2.7
20
V
mA
500 MHz
Gain
T= 25C
T= 25C
T= 25C
T= 25C
17.7
2.9
20.5
8.2
16.4
21.3
dB
dB
dBm
dBm
dB
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
dB
850 MHz
Gain
17.4
2.9
19.4
8.2
15.7
21.3
dB
dB
dBm
dBm
dB
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
dB
1950 MHz
Gain
16.1
3.3
20.4
7.2
13.3
21.6
dB
dB
dBm
dBm
dB
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
dB
2400 MHz
Gain
15.6
3.6
19.2
6.8
12.3
21.6
dB
dB
dBm
dBm
dB
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
dB
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-100628 Rev A
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
Pin #
1
Function
Description Device Schematic
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
2
3
GND
Sames as Pin 1
RF IN
RF input pin. This pin requires the use of
an external DC blocking capacitor
chosen for the frequency of operation.
4
5
6
GND
GND
Sames as Pin 1
Sames as Pin 1
RF OUT RF output and bias pin. DC voltage is
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
Application Schematic for +5V Operation at 900 MHz
1uF
68pF
115 ohms
Note: A bias resistor is needed for
stability over temperature
V
CC=+5V
33nH
50ohm
50ohm
microstrip
microstrip
1,2
4,5
3
6
100pF
100pF
Application Schematic for +5V Operation at 1900 MHz
1uF
22pF
115 ohms
VCC=+5V
22nH
68pF
50ohm
microstrip
50ohm
microstrip
1,2
4,5
3
6
68pF
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-100628 Rev A
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
S21, Id =20mA, T=+25C
S12, Id =20mA, T=+25C
0
24
18
12
6
-10
-20
-30
-40
dB
dB
0
Frequency MHz
Frequency MHz
S22, Id =20mA, T=+25C
S11, Id =20mA, T=+25C
0
-10
-20
-30
-40
0
-10
-20
-30
-40
dB
dB
Frequency MHz
Frequency MHz
S22, Id=20mA, Ta= +25C
S11, Id=20mA, Ta= +25C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-100628 Rev A
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
S21, Id =20mA, T=-40C
S12, Id =20mA, T=-40C
0
24
18
12
6
-10
-20
-30
-40
dB
dB
0
Frequency MHz
Frequency MHz
S22, Id =20mA, T=-40C
S11, Id =20mA, T=-40C
0
0
-10
-20
-30
-40
-10
dB
dB -20
-30
-40
Frequency MHz
Frequency MHz
S22, Id=20mA, T=-40C
S11, Id=20mA, T=-40C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-100628 Rev A
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
S21, Id =20mA, T=+85C
S12, Id =20mA, T=+85C
0
24
18
12
6
-10
-20
-30
-40
dB
dB
0
Frequency MHz
Frequency MHz
S22, Id =20mA, T=+85C
S11, Id =20mA, T=+85C
0
-10
-20
-30
-40
0
-10
-20
-30
-40
dB
dB
Frequency MHz
Frequency MHz
S22, Id=20mA, T=+85C
S11, Id=20mA, T=+85C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
6
http://www.stanfordmicro.com
EDS-100628 Rev A
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
Part Number Ordering Information
Absolute Maximum Ratings
Parameter
Value
40
Unit
mA
C
Part Number
Reel Size
Devices/Reel
Supply Current
SGA-2363-TR1
7"
3000
Operating Temperature
Maximum Input Power
Storage Temperature Range
Operating Junction Temperature
Caution:
-40 to +85
+3
dBm
C
-40 to +85
+125
Recommended Bias Resistor Values
Supply
C
3V
5V 7.5V 9V
12V
Voltage(Vs)
Operation of this device above any one of these
parameters may cause permanent damage. Appropriate
precautions in handling, packaging and testing devices
must be observed.
Rbias
(Ohms)
15
115 240 315 465
Thermal Resistance (Lead-Junction):
255° C/W
6
5
4
Pin Designation
Note: Pin 1 is on lower left
when you can read
package marking
1
2
3
4
5
6
GND
GND
Package Marking
RF in
GND
A23
GND
RF out
1
2
3
Package Dimensions
Pad Layout
0.026
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
0.075
0.035
0.650 BSC (0.025)
2.20 (0.087)
1.80 (0.071)
0.016
0.425 (0.017)
TYP.
0.10 (0.004)
0.00 (0.00)
0.20 (0.0080
0.10 (0.004)
1.00 (0.039)
0.80 (0.031)
0.30 REF.
0.30 (0.012)
0.10 (0.0040
0.25 (0.010)
0.15 (0.006)
10°
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
7
http://www.stanfordmicro.com
EDS-100628 Rev A
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