SGA-2386Z [SIRENZA]

DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier; DC -5000兆赫,可级联的SiGe HBT MMIC放大器
SGA-2386Z
型号: SGA-2386Z
厂家: SIRENZA MICRODEVICES    SIRENZA MICRODEVICES
描述:

DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier
DC -5000兆赫,可级联的SiGe HBT MMIC放大器

放大器
文件: 总4页 (文件大小:96K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SGA-2386  
SGA-2386Z  
DC-5000 MHz, Cascadable  
SiGe HBT MMIC Amplifier  
RoHS Compliant  
& Green Package  
Product Description  
The SGA-2386 is a high performance SiGe HBT MMIC Amplifier. A  
Darlington configuration featuring 1 micron emitters provides high  
Pb  
F
and excellent thermal perfomance. The heterojunction in-  
T
creases breakdown voltage and minimizes leakage current be-  
tween junctions. Cancellation of emitter junction non-linearities  
results in higher suppression of intermodulation products. Only 2  
DC-blocking capacitors, a bias resistor and an optional RF choke  
are required for operation.  
The matte tin finish on Sirenza’s lead-free package utilizes a post  
annealing process to mitigate tin whisker formation and is RoHS  
compliant per EU Directive 2002/95. This package is also manu-  
factured with green molding compounds that contain no antimony  
trioxide nor halogenated fire retardants.  
Product Features  
• Now available in Lead Free, RoHS  
Compliant, & Green Packaging  
• High Gain : 15.3dB at 1950 MHz  
• Cascadable 50 Ohm  
Gain & Return Loss vs. Freq. @TL=+25°C  
24  
18  
12  
6
0
• Operates From Single Supply  
• Low Thermal Resistance Package  
GAIN  
IRL  
-10  
-20  
-30  
-40  
Applications  
• PA Driver Amplifier  
• Cellular, PCS, GSM, UMTS  
• IF Amplifier  
ORL  
0
• Wireless Data, Satellite  
0
1
2
3
4
5
Frequency (GHz)  
Symbol  
Parameter  
Small Signal Gain  
Units  
Frequency  
Min.  
Typ.  
Max.  
850 MHz  
1950 MHz  
2400 MHz  
15.5  
17.2  
15.3  
14.5  
18.9  
G
dB  
850 MHz  
1950 MHz  
8.5  
7.5  
P1dB  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
dBm  
dBm  
850 MHz  
1950 MHz  
20.5  
19.5  
OIP3  
Bandwidth  
IRL  
Determined by Return Loss (>8dB)  
Input Return Loss  
MHz  
dB  
dB  
dB  
V
2800  
11.5  
20.2  
3.2  
1950 MHz  
1950 MHz  
1950 MHz  
ORL  
NF  
Output Return Loss  
Noise Figure  
Device Voltage  
2.4  
17  
2.7  
3.0  
23  
VD  
Device Operating Current  
mA  
20  
97  
ID  
RTH, j-l  
Thermal Resistance (junction to lead)  
°C/W  
VS = 5 V  
RBIAS = 120 Ohms TL = 25ºC  
ID = 20 mA Typ.  
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm  
ZS = ZL = 50 Ohms  
Test Conditions:  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
522 Almanor Ave., Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-100627 Rev C  
SGA-2386 DC-5000 MHz Cascadable MMICAmplifier  
Preliminary  
Typical RF Performance at Key Operating Frequencies  
Frequency (MHz)  
850  
Symbol  
G
Parameter  
Small Signal Gain  
Unit  
dB  
100  
500  
18.0  
20.3  
8.2  
1950  
15.3  
19.5  
8.0  
2400  
14.5  
18.5  
7.6  
18.4  
17.2  
20.5  
8.8  
OIP3  
P1dB  
IRL  
Output Third Order Intercept Point  
Output Power at 1dB Compression  
Input Return Loss  
dBm  
dBm  
dB  
20.0  
16.8  
21.1  
19.6  
22.1  
21.1  
2.9  
12.0  
14.8  
21.4  
2.9  
11.5  
20.2  
21.7  
3.5  
13.7  
25.2  
21.3  
3.6  
ORL  
S12  
Output Return Loss  
dB  
Reverse Isolation  
dB  
NF  
Noise Figure  
dB  
V = 5 V  
S
I = 20 mA Typ.  
D
OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm  
3
Z = Z = 50 Ohms  
SL
Test Conditions:  
R
= 120 Ohms T = 25ºC  
BIASL
Absolute Maximum Ratings  
Parameter  
Absolute Limit  
Noise Figure vs. Frequency  
VD= 2.7 V, ID= 20 mA  
Max. Device Current (ID)  
Max. Device Voltage (VD)  
Max. RF Input Power  
40 mA  
5
4
3
2
1
5 V  
+18 dBm  
+150°C  
TL=+25ºC  
Max. Junction Temp. (TJ)  
Operating Temp. Range (TL)  
-40°C to +85°C  
+150°C  
Max. Storage Temp  
.
Operation of this device beyond any one of these limits may  
cause permanent damage. For reliable continous operation,  
the device voltage and current must not exceed the maximum  
operating values specified in the table on page one.  
0
0
0.5  
1
1.5  
2
2.5  
3
Bias conditions should also satisfy the following expression:  
IDVD < (TJ - TL) / RTH, j-l  
Frequency (GHz)  
OIP3 vs. Frequency  
VD= 2.7 V, ID= 20 mA  
P1dB vs. Frequency  
VD= 2.7 V, ID= 20 mA  
10  
8
30  
25  
20  
15  
6
4
TL=+25ºC  
2
TL=+25ºC  
2.5 3  
0
10  
0
0
0.5  
1
1.5  
2
2.5  
3
0.5  
1
1.5  
2
Frequency (GHz)  
Frequency (GHz)  
303 Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
2
http://www.sirenza.com  
EDS-100627 Rev C  
SGA-2386 DC-5000 MHz Cascadable MMICAmplifier  
Preliminary  
Typical RF Performance Over Temperature ( Bias: VD= 2.7 V, ID= 20 mA (Typ.) )  
|S21| vs. Frequency  
|S11| vs. Frequency  
24  
18  
12  
6
0
-10  
-20  
-30  
-40  
+25°C  
-40°C  
+85°C  
+25°C  
-40°C  
+85°C  
TL  
TL  
0
0
1
2
3
4
5
0
1
2
3
4
5
Frequency (GHz)  
Frequency (GHz)  
|S12| vs. Frequency  
|S22| vs. Frequency  
-10  
-15  
-20  
-25  
-30  
0
-10  
-20  
-30  
-40  
+25°C  
-40°C  
+85°C  
+25°C  
-40°C  
+85°C  
TL  
TL  
0
1
2
3
4
5
0
1
2
3
4
5
Frequency (GHz)  
Frequency (GHz)  
NOTE: Full S-parameter data available at www.sirenza.com  
303 Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
3
http://www.sirenza.com  
EDS-100627 Rev C  
SGA-2386 DC-5000 MHz Cascadable MMICAmplifier  
Preliminary  
BasicApplication Circuit  
RBIAS  
Application Circuit Element Values  
VS  
Frequency (Mhz)  
Reference  
1000  
pF  
CD  
1 uF  
Designator  
500  
850  
1950  
2400  
3500  
CB  
CD  
LC  
220 pF 100 pF  
68 pF  
22 pF  
22 nH  
56 pF  
22 pF  
18 nH  
39 pF  
15 pF  
15 nH  
LC  
100 pF  
68 nH  
68 pF  
33 nH  
4
1 SGA-2386  
3
RF in  
RF out  
CB  
2
CB  
Recommended Bias Resistor Values for ID=20mA  
R
Supply Voltage(VS)  
RBIAS  
BIAS=( VS-VD ) / ID  
5 V  
120  
6 V  
160  
8 V  
270  
10 V  
360  
VS  
1 uF  
RBIAS  
Note: RBIAS provides DC bias stability over temperature.  
1000 pF  
CD  
LC  
Mounting Instructions  
CB  
CB  
1. Use a large ground pad area under device pins 2  
and 4 with many plated through-holes as shown.  
3. We recommend 1 or 2 ounce copper. Measurements  
for this data sheet were made on a 31 mil thick FR-4  
board with 1 ounce copper on both sides.  
Part Identification Marking  
Pin # Function  
Description  
1
RF IN RF input pin. This pin requires the use  
of an external DC blocking capacitor  
3
23Z  
1
3
A23  
1
chosen for the frequency of operation.  
2,4  
GND  
Connection to ground. Use via holes for  
best performance to reduce lead  
inductance as close to ground leads as  
possible.  
2
4
2
4
3
RF OUT/ RF output and bias pin. DC voltage is  
BIAS  
present on this pin, therefore a DC  
blocking capacitor is necessary for  
proper operation.  
Caution: ESD sensitive  
Appropriate precautions in handling, packaging  
and testing devices must be observed.  
Part Number Ordering Information  
Part Number  
SGA-2386  
SGA-2386Z  
Reel Size  
13"  
Devices/Reel  
3000  
See Application Note AN-075  
for Package Outline Drawing  
13"  
3000  
303 Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
4
http://www.sirenza.com  
EDS-100627 Rev C  

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