SBB-4089Z [SIRENZA]

0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier; 0.05-6千兆赫,可级联的有源偏置的InGaP /砷化镓HBT MMIC放大器
SBB-4089Z
型号: SBB-4089Z
厂家: SIRENZA MICRODEVICES    SIRENZA MICRODEVICES
描述:

0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier
0.05-6千兆赫,可级联的有源偏置的InGaP /砷化镓HBT MMIC放大器

放大器 射频 微波
文件: 总6页 (文件大小:379K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SBB-4089  
RoHS Compliant  
& Green Package  
Pb  
SBB-4089Z  
Product Description  
Sirenza Microdevices’ SBB-4089 is a high performance InGaP HBT MMIC  
amplifier utilizing a Darlington configuration with an active bias network.  
The active bias network provides stable current over temperature and  
process Beta variations. Designed to run directly from a 5V supply, the  
SBB-4089 does not require a dropping resistor as compared to typical  
Darlington amplifiers. The SBB-4089 product is designed for high linearity  
5V gain block applications that require small size and minimal external  
components. It is internally matched to 50 ohms.  
0.05-6 GHz, Cascadable  
Active Bias InGaP/GaAs HBT MMIC Amplifier  
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing  
process to mitigate tin whisker formation and is RoHS compliant per EU  
Directive 2002/95. This package is also manufactured with green molding  
compounds that contain no antimony trioxide nor halogenated fire retardants.  
Product Features  
Available in Lead Free, RoHS compliant, & Green packaging  
IP3 = 35.2 dBm @ 1950MHz  
Gain & Return Loss vs. Frequency (w/ BiasTees)  
P1dB = 19.3 dBm @ 1950MHz  
20  
Single Fixed 5V Supply  
S21  
10  
0
Robust 1000V ESD, Class 1C  
Patented Thermal Design & Patent Pending Bias Circuit  
Low Thermal Resistance  
MSL 1 moisture rating  
-10  
-20  
-30  
-40  
S22  
S11  
Applications  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS  
Wideband Instrumentation  
Wireless Data, Satellite Terminals  
0
1
2
3
4
5
6
Frequency (GHz)  
Symbol  
Parameter  
Small Signal Gain  
Units  
Frequency  
Min.  
Typ.  
Max.  
850MHz  
1950 MHz  
2000 MHz  
14.0  
14.0  
13.5  
15.0  
15.5  
15.5  
17.0  
17.0  
17.5  
S21  
dB  
850MHz  
19.0  
19.5  
P1dB  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
dBm  
dBm  
1950 MHz  
18  
850MHz  
1950 MHz  
39.0  
35.0  
OIP3  
33.0  
Bandwidth S11, S22: Minimum 10dB Return Loss (typ.)  
MHz  
dB  
dB  
dB  
dB  
V
4500  
17.5  
17.5  
18.5  
4.5  
S11  
S22  
S12  
NF  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
Noise Figure  
1950 MHz  
1950 MHz  
1950 MHz  
1950 MHz  
10.0  
10.0  
5.5  
5.25  
92  
Device Operating Voltage  
5
VD  
Device Operating Current  
mA  
72  
80  
ID  
Thermal Resistance (junction to lead)  
°C/W  
69.9  
RTH, j-l  
VD = 5 V  
TL = 25ºC  
ID = 80 mA Typ.  
ZS = ZL = 50 Ohms  
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm  
Tested with Bias Tees  
Test Conditions:  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-103832 Rev D  
SBB-4089 0.05-6 GHz Cascadable MMIC Amplifier  
Typical RF Performance at Key Operating Frequencies (With .5-3.5 GHz Application Circuit)  
Frequency (MHz)  
Symbol  
S21  
Parameter  
Small Signal Gain  
Unit  
dB  
500  
15.6  
850  
15.6  
1950  
15.5  
2500  
15.5  
3500  
15.5  
4000  
15.0  
OIP3  
P1dB  
S11  
Output Third Order Intercept Point  
Output Power at 1dB Compression  
Input Return Loss  
dBm  
dBm  
dB  
38.8  
19.2  
25.1  
32.1  
18.4  
4.3  
39.3  
19.1  
29.9  
26.4  
18.4  
4.3  
35.2  
19.2  
19.4  
17.2  
18.9  
4.6  
32.8  
18.6  
17.6  
14.7  
19.1  
4.5  
29.1  
16.7  
14.9  
13.2  
19.8  
4.8  
26.1  
14.1  
21.3  
17.4  
20.8  
5.1  
S22  
Output Return Loss  
dB  
S12  
Reverse Isolation  
dB  
NF  
Noise Figure  
dB  
Test Conditions: VCC = 5V  
I
D = 80mA Typ.  
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm  
TL = 25°C  
ZS = ZL = 50 Ohms  
Noise Figure @ 25C  
7
6
5
4
3
2
1
P1dB vs. Frequency with App. Ckt.  
25  
20  
15  
10  
5
Avg. BiasTee  
Avg. AppCkt  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Frequency (GHz)  
P1dB 25C  
P1dB -40C  
P1dB 85C  
OIP3 vs. Frequency with App. Ckt.  
45  
40  
35  
30  
25  
20  
15  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Frquency (GHz)  
IP3 25C  
IP3 -40C  
IP3 85C  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Frequency (GHz)  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
2
http://www.sirenza.com  
EDS-103832 Rev D  
SBB-4089 0.05-6 GHz Cascadable MMIC Amplifier  
S21 vs. Frequency  
S-Parameters taken with Bias Tee over Temperature  
S11 vs. Frequency  
25  
20  
15  
10  
5
0
-10  
-20  
-30  
-40  
-50  
25C  
-40C  
85C  
25C  
-40C  
85C  
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)  
Frequency (GHz)  
S22 vs. Frequency  
S12 vs. Frequency  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-10  
-20  
-30  
-40  
-50  
-60  
25C  
-40C  
85C  
25C  
-40C  
85C  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)  
Frequency (GHz)  
Device Current over Temperature (w/Bias Tees)  
Id vs. Temperature  
Current vs. Votage Over temp. (Bias Tees)  
78  
105  
95  
85  
75  
65  
55  
76  
74  
72  
25C  
-40C  
85C  
-40C  
25C  
Temperature  
85C  
4.5  
4.6  
4.7  
4.8  
4.9  
5
5.1  
5.2  
5.3  
5.4  
5.5  
Voltage (V)  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
3
http://www.sirenza.com  
EDS-103832 Rev D  
SBB-4089 0.05-6 GHz Cascadable MMIC Amplifier  
0.5 to 3.5GHz Application Circuit S-Parameters over Temperature  
S11 vs. Frequency  
S21 vs. Frequency  
0
-10  
-20  
-30  
-40  
-50  
25  
20  
15  
10  
5
25C  
-40C  
85C  
25C  
-40C  
85C  
0
0
1
2
3
4
0
1
2
3
4
Frequency (GHz)  
Frequency (GHz)  
S22 vs. Frequency  
S12 vs. Frequency  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-10  
-20  
-30  
-40  
-50  
-60  
25C  
-40C  
85C  
25C  
-40C  
85C  
0
1
2
3
4
0
1
2
3
4
Frequency (GHz)  
Frequency (GHz)  
Device Current over Temperature (w/App. Ckt.)  
Id vs. Temperature  
Current vs. Voltage Over Temp. (App. Ckt.)  
78  
105  
95  
85  
75  
65  
55  
76  
74  
72  
25C  
-40C  
85C  
4.5  
4.6  
4.7  
4.8  
4.9  
5
5.1  
5.2  
5.3  
5.4  
5.5  
-40C  
25C  
85C  
Voltage (V)  
Temperature  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
4
http://www.sirenza.com  
EDS-103832 Rev D  
SBB-4089 0.05-6 GHz Cascadable MMIC Amplifier  
Application Circuit Element Values  
Application Schematic  
Reference  
Designator  
Frequency (MHz)  
500 to 3500  
VS  
CB  
LC  
68pF  
82nH 1008CS  
1200  
pF  
CB  
1 uF  
LC  
4
1
3
SBB-4089  
RF in  
CB  
RF out  
CB  
2
Evaluation Board Layout  
Absolute Maximum Ratings  
Parameter  
Absolute Limit  
100 mA  
Ma. Dvice Current (ID)  
Max Device Voltage (VD)  
Max. RF Input Power  
5.5 V  
+12 dBm  
Max. Operating Dissipated  
Power  
0.55 W  
Max. Junction Temp. (TJ)  
Operating Temp. Range (TL)  
Max. Storage Temp.  
+150°C  
-40°C to +85°C  
+150°C  
Operation of this device beyond any one of these limits may cause  
permanent damage. For reliable continuous operation, the device  
voltage and current must not exceed the maximum operating  
values specified in the table on page one.  
Bias Conditions should also satisfy the following expression:  
IDVD < (TJ - TL) / RTH, j-l  
TL=TLEAD  
ESD Class 1C  
Appropriate precautions in handling, packaging and testing  
devices must be observed.  
Mounting Instructions  
MSL (Moisture Sensitivity Level) Rating: Level 1  
1. Solder the copper pad on the backside of the device package to  
the ground plane.  
2. Use a large ground pad area with many plated through-holes as  
shown.  
3. We recommend 1 or 2 ounce copper. Measurement for this  
datasheet were made on a 31 mil thick FR-4 board with 1  
ounce copper on both sides.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
http://www.sirenza.com  
5
EDS-103832 Rev D  
SBB-4089 0.05-6 GHz Cascadable MMIC Amplifier  
Suggested PCB Pad Layout  
Dimensions in inches [millimeters]  
Nominal Package Dimensions  
Dimensions in inches (millimeters)  
Refer to package drawing posted at www.sirenza.com for tolerances  
Bottom View  
Side View  
Package Marking  
4
4
BB4  
BB4Z  
1
2
3
1
2
3
Tin-Lead  
Lead Free  
Pin # Function  
Description  
RF input pin. This pin requires the use of  
an external DC blocking capacitor chosen  
for the frequency of operation.  
RF IN  
1
Connection to ground. Use via holes for  
best performance to reduce lead  
inductance as close to ground leads as  
possible  
GND  
2, 4  
Part Number Ordering Information  
Part Number  
Reel Size  
Devices / Reel  
RF output and bias pin. DC voltage is  
present on this pin, therefore a DC blocking  
capacitor is necessary for proper operation.  
RF OUT/  
BIAS  
SBB-4089  
7"  
7"  
1000  
1000  
3
SBB-4089Z  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
6
http://www.sirenza.com  
EDS-103832 Rev D  

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