SBB-5089 [SIRENZA]

0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier; 0.05-6千兆赫,可级联的有源偏置的InGaP /砷化镓HBT MMIC放大器
SBB-5089
型号: SBB-5089
厂家: SIRENZA MICRODEVICES    SIRENZA MICRODEVICES
描述:

0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier
0.05-6千兆赫,可级联的有源偏置的InGaP /砷化镓HBT MMIC放大器

放大器 射频 微波
文件: 总6页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SBB-5089  
SBB-5089Z  
0.05-6 GHz, Cascadable  
RoHS Compliant  
& Green Package  
Pb  
Product Description  
Sirenza Microdevices’ SBB-5089 is a high performance InGaP HBT MMIC  
amplifier utilizing a Darlington configuration with an active bias network.  
The active bias network provides stable current over temperature and  
process Beta variations. Designed to run directly from a 5V supply, the  
SBB-5089 does not require a dropping resistor as compared to typical  
Darlington amplifiers. The SBB-5089 product is designed for high linearity  
5V gain block applications that require small size and minimal external  
components. It is internally matched to 50 ohms.  
Active Bias InGaP/GaAs HBT MMIC Amplifier  
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing  
process to mitigate tin whisker formation and is RoHS compliant per EU  
Directive 2002/95. This package is also manufactured with green molding  
compounds that contain no antimony trioxide nor halogenated fire retardants.  
Product Features  
Available in Lead free, RoHS compliant, & Green packaging  
Wideband Flat Gain to 4GHz: +/-1.1dB  
P1dB = 20.4 dBm @ 1950MHz  
Gain & Return Loss vs. Frequency (w/ BiasTees)  
30  
Single Fixed 5V Supply  
Robust 1000V ESD, Class 1C  
Patented Thermal Design & Patent Pending Bias Circuit  
20  
S21  
10  
Low Thermal Resistance  
MSL 1 moisture rating  
0
-10  
S22  
-20  
Applications  
PA Driver Amplifier  
S11  
-30  
-40  
Cellular, PCS, GSM, UMTS  
Wideband Intrumentation  
Wireless Data, Satellite Terminals  
0
1
2
3
4
5
6
Frequency (GHz)  
Symbol  
Parameters  
Units  
Frequency  
Min.  
Typ.  
Max.  
22  
850 MHz  
1950 MHz  
6000 MHz  
19  
20.5  
20  
S21  
Small Signal Gain  
dB  
18.5  
14.5  
21.5  
17.5  
16  
850 MHz  
1950 MHz  
20.5  
20.5  
P1dB  
IP3  
Output Power at 1 dB Compression  
Third Order Intercept Point  
dBm  
dBm  
19  
33  
850 MHz  
1950 MHz  
38.5  
35  
S
11, S22: Minimum 10dB Return Loss (typ.)  
Bandwidth  
MHz  
dB  
3000  
14  
S11  
S22  
Input Return Loss  
1950 MHz  
1950 MHz  
1950 MHz  
1950 MHz  
10  
10  
Output Return Loss  
dB  
14  
S12  
Reverse Isolation  
dB  
23.3  
4.2  
5
NF  
Noise Figure  
dB  
4.9  
5.25  
92  
VD  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance (junction - lead)  
V
ID  
mA  
°C/W  
65  
75  
RTH, j-l  
69.9  
Test Conditions:  
VD = 5V  
ID = 75 mA Typ.  
ZS = ZL = 50 Ohms  
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm  
Tested with Bias Tees  
TL = 25°C  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-103839 Rev E  
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier  
Typical RF Performance at Key Operating Frequencies (With .5-3.5 GHz Application Circuit)  
Frequency (MHz)  
Symbol  
Parameter  
Unit  
500  
850  
1950  
2500  
3500  
4000  
S21  
Small Signal Gain  
dB  
20.8  
20.8  
20.1  
19.8  
18.7  
17.8  
OIP3  
P1dB  
S11  
Output Third Order Intercept Point  
Output Power at 1dB Compression  
Input Return Loss  
dBm  
dBm  
dB  
38.6  
20.5  
27.2  
31.8  
22.7  
3.8  
39.2  
20.4  
22.7  
21.5  
22.8  
3.8  
34.9  
20.4  
14.6  
13.5  
23.4  
4.1  
32.8  
19.4  
12.9  
12.0  
23.7  
4.1  
29.4  
16.9  
10.6  
13.5  
24.7  
4.3  
26.8  
14.7  
11.6  
27.5  
25.7  
4.6  
S22  
Output Return Loss  
dB  
S12  
Reverse Isolation  
dB  
NF  
Noise Figure  
dB  
Test Conditions:  
VCC = 5V  
TL = 25°C  
ID = 75 mA Typ.  
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm  
Test Conditions:  
ZS = ZL = 50 Ohms  
Noise Figure @ 25C  
8
7
6
5
4
3
2
1
P1dB vs. Frequency with App. Ckt.  
Avg. BiasTee  
Avg. AppCkt  
25  
20  
15  
10  
5
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Frequency (GHz)  
OIP3 vs. Frequency with App. Ckt.  
P1dB 25C  
P1dB -40C  
P1dB 85C  
45  
40  
35  
30  
25  
20  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Frequency (GHz)  
IP3 25C  
IP3 -40C  
IP3 85C  
15  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Frequency (GHz)  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
2
http://www.sirenza.com  
EDS-103839 Rev E  
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier  
S21 vs. Frequency  
S-Parameters taken with Bias Tees over Temperature  
S11 vs. Frequency  
25  
20  
15  
10  
5
0
-10  
-20  
-30  
-40  
25C  
-40C  
85C  
25C  
-40C  
85C  
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)  
Frequency (GHz)  
S22 vs. Frequency  
S12 vs. Frequency  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-10  
-20  
-30  
-40  
-50  
25C  
-40C  
85C  
25C  
-40C  
85C  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)  
Frequency (GHz)  
Device Current over Temperature (w/Bias Tees)  
Current vs. Voltage Over Temp. (Bias Tees)  
Id vs. Temperature  
105  
95  
85  
75  
65  
55  
84  
82  
80  
78  
25C  
-40C  
85C  
4.5  
4.6  
4.7  
4.8  
4.9  
5
5.1  
5.2  
5.3  
5.4  
5.5  
-40C  
25C  
85C  
Voltage (V)  
Temperature  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
3
http://www.sirenza.com  
EDS-103839 Rev E  
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier  
0.5 to 3.5GHz Application Circuit S-Parameters over Temperature  
S21 vs. Frequency  
S11 vs. Frequency  
25  
20  
15  
10  
5
0
-10  
-20  
-30  
-40  
25C  
-40C  
85C  
25C  
-40C  
85C  
0
0
1
2
3
4
0
1
2
3
4
Frequency (GHz)  
Frequency (GHz)  
S22 vs. Frequency  
S12 vs. Frequency  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-10  
-20  
-30  
-40  
-50  
25C  
-40C  
85C  
25C  
-40C  
85C  
0
1
2
3
4
0
1
2
3
4
Frequency (GHz)  
Frequency (GHz)  
Device Current over Temperature (w/App. Ckt.)  
Current vs. Voltage Over Temp. (App. Ckt.)  
Id vs. Temperature  
105  
95  
85  
75  
65  
55  
84  
82  
80  
78  
25C  
-40C  
85C  
4.5  
4.6  
4.7  
4.8  
4.9  
5
5.1  
5.2  
5.3  
5.4  
5.5  
-40C  
25C  
85C  
Voltage (V)  
Temperature  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
4
http://www.sirenza.com  
EDS-103839 Rev E  
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier  
Application Circuit Element Values  
Application Schematic  
Reference  
Designator  
Frequency (MHz)  
500 to 3500  
VS  
CB  
LC  
68pF  
1200  
pF  
CB  
1 uF  
82nH 1008CS  
LC  
4
1 SBB-5089  
3
RF in  
RF out  
CB  
2
CB  
Evaluation Board Layout  
Absolute Maximum Ratings  
Parameter  
Absolute Limit  
100 mA  
Max. Device Current (ID)  
Max. Device Voltage (VD)  
Max. RF Input Power  
5.5 V  
+12 dBm  
Max. Operating Dissipated  
Power  
0.55 W  
Max. Junction Temp. (TJ)  
Operating Temp. Range (TL)  
Max. Storage Temp.  
+150°C  
-40°C to +85°C  
+150°C  
Operation of this device beyond any one of these limits may cause  
permanent damage. For reliable continuous operation, the device  
voltage and current must not exceed the maximum operating  
values specified in the table on page one.  
Bias Conditions should also satisfy the following expression:  
IDVD < (TJ - TL) / RTH, j-l  
TL=TLEAD  
ESD Class 1C  
Appropriate precautions in handling, packaging and testing  
devices must be observed.  
Mounting Instructions  
MSL (Moisture Sensitivity Level) Rating: Level 1  
1. Solder the copper pad on the backside of the device package to  
the ground plane.  
2. Use a large ground pad area with many plated through-holes as  
shown.  
3. We recommend 1 or 2 ounce copper. Measurement for this  
datasheet were made on a 31 mil thick FR-4 board with 1  
ounce copper on both sides.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
http://www.sirenza.com  
5
EDS-103839 Rev E  
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier  
Suggested PCB Pad Layout  
Dimensions in inches [millimeters]  
Nominal Package Dimensions  
Dimensions in inches (millimeters)  
Refer to package drawing posted at www.sirenza.com for tolerances  
Bottom View  
Side View  
Package Marking  
4
4
BB5  
BB5Z  
1
2
3
1
2
3
Tin-Lead  
Lead Free  
Pin # Function  
Description  
RF input pin. This pin requires the use of  
an external DC blocking capacitor chosen  
for the frequency of operation.  
RF IN  
GND  
1
Connection to ground. Use via holes for  
best performance to reduce lead  
inductance as close to ground leads as  
possible  
Part Number Ordering Information  
Part Number  
Reel Size  
Devices / Reel  
2, 4  
SBB-5089  
7"  
7"  
1000  
1000  
SBB-5089Z  
RF output and bias pin. DC voltage is  
present on this pin, therefore a DC blocking  
capacitor is necessary for proper operation.  
RF OUT/  
BIAS  
3
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
6
http://www.sirenza.com  
EDS-103839 Rev E  

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