SBB-5000 [RFMD]
0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER; 0.05GHZ到6GHz ，可级联的有源偏置的InGaP HBT MMIC放大器
| 型号： | SBB-5000 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER |
| 文件： | 总6页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBB-5000
0.05GHz to
6GHz, Cascad-
able Active
Bias InGaP
HBT MMIC
Amplifier
Preliminary
SBB-5000
0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS
InGaP HBT MMIC AMPLIFIER
Package: Bare Die
Product Description
Features
RFMD’s SBB-5000 is a high performance InGaP HBT MMIC amplifier utilizing a Dar-
lington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Its efficient operation
from a single 5V supply and its compact size (0.59mmx0.70mm) make it ideal for
high-density multi-chip module applications. It is well-suited for high linearity 5V
gain block applications and it is internally matched to 50Ω.
OIP3=35dBm @ 2000MHz
=20.5dBm @ 2000MHz
P
1dB
Single Fixed 5V Supply
Compact Die Size
(0.59mmx0.70mm)
RFMD can provide 100% DC screening, visual inspection, and Hi-Rel water qualifi-
cation. Die can be delivered at the wafer level or picked to gel
Patented Thermal Design &
Bias Circuit
or waffle paks.
Optimum Technology
Matching® Applied
Low Thermal Resistance
Gain and Return Loss versus Frequency
VS=5V, IS=75mA
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
30.0
20.0
10.0
0.0
Applications
PA Driver Amplifier
9
RF Pre-driver and RF Receive
Path
GSG Probe Data with Bias Tees
ZS=ZL=50 Ohms, T=25°C
Military Communications
Test and Instrumentation
-10.0
-20.0
-30.0
-40.0
GaAs pHEMT
Si CMOS
IRL
Gain
ORL
Si BJT
GaN HEMT
RF MEMS
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Specification
Typ.
Parameter
Unit
Condition
Min.
50
Max.
6000
Frequency of Operation
Small Signal Gain
MHz
dB
dB
20.5
20.5
20.0
21.0
20.5
17.0
37.0
35.0
30.0
15.0
12.0
75.0
3.9
Frequency=500MHz
Frequency=2000Mhz
Frequency=4000MHz
Frequency=500MHz
Frequency=2000MHz
Frequency=4000MHz
Frequency=500MHz
Frequency=2000MHz
Frequency=4000MHz
Frequency=2000MHz
Frequency=2000MHz
dB
Output Power at 1dB Compression
Output IP3
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
dB
Input Return Loss
Output Return Loss
Current
Noise Figure
Frequency=2000MHz
Thermal Resistance
69.9
°C/W
Junction to lead (89 pkg)
Test Conditions: Z =50Ω, V =5V, I =75mA, T=25°C, OIP3 Tone Spacing=1MHz, P /tone=0dBm. GSG Probe Data with Bias Tees.
0
D
D
OUT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or techni-
cal support, contact RFMD at (+1) 336-678-5570 or sales-sup-
EDS-106102 Rev A
1 of 6
Preliminary
SBB-5000
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
100
Unit
mA
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Total Current (I )
D
Device Voltage (V )
5.5
D
Power Dissipation
0.55
W
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Operating Lead Temperature (T )
L
-40 to +85
°C
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RF Input Power
+12 (TBR)*
-55 to +150
+150
dBm
°C
Storage Temperature Range
Operating Junction Temperature (T )
J
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
* TBR=To Be Reviewed
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I V <(T -T )/R , j-l
D
D
J
L
TH
Typical Performance (GSG Probe Data with Bias Tees) VD=5V, ID=75mA, T=25°C, Z=50Ω
Parameter
Units
dB
dBm
500MHz 1000MHz 1500MHz 2000MHz 3000MHz 4000MHz
Small Signal Gain
20.5
37.0
20.5
36.0
20.5
35.0
20.5
35.0
20.5
33.0
20.0
30.0
Output 3rd Order Intercept Point
(see note 1)
Output Power at 1dB Compression
Input Return Loss
dBm
dB
dB
dB
dB
21.0
27.0
22.0
22.1
3.8
20.5
21.0
18.0
22.5
4.0
20.5
17.0
14.6
22.4
3.9
20.5
15.0
12.0
22.9
3.9
19.5
11.0
9.0
23.0
4.0
17.0
9.5
7.2
23.0
3.8
Output Return Loss
Reverse Isolation
Noise Figure
Note 1: 0dBm/tone, 1MHz spacing
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or techni-
cal support, contact RFMD at (+1) 336-678-5570 or sales-sup-
2 of 6
EDS-106102 Rev A
Preliminary
SBB-5000
Typical Performance (GSG Probe Data with Bias Tees) VD=5.0V, ID=75mA
P1dB versus Frequency
OIP3 versus Frequency
(0dBm/Tone, 1MHz Spacing)
24.0
22.0
20.0
18.0
16.0
14.0
12.0
10.0
45.0
40.0
35.0
30.0
25.0
20.0
-20°C
25°C
85°C
-20°C
25°C
85°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
Current versus Voltage
Noise Figure versus Frequency
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-20°C
25°C
85°C
25°C
85°C
4.8
4.9
5.0
5.1
5.2
5.3
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VD (V)
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or techni-
cal support, contact RFMD at (+1) 336-678-5570 or sales-sup-
EDS-106102 Rev A
3 of 6
Preliminary
SBB-5000
Typical Performance (GSG Probe Data with Bias Tees) VD=5.0V, ID=75mA
S11 versus Frequency
S21 versus Frequency
0.0
24.0
22.0
20.0
18.0
16.0
14.0
-20°C
25°C
85°C
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-20°C
25°C
85°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
S12 versus Frequency
S22 versus Frequency
0.0
-5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-10.0
-15.0
-20.0
-25.0
-30.0
-20°C
25°C
85°C
-20°C
25°C
85°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or techni-
cal support, contact RFMD at (+1) 336-678-5570 or sales-sup-
4 of 6
EDS-106102 Rev A
Preliminary
SBB-5000
Pin
Function
RF IN
RF OUT
DIE
Description
This pad is DC coupled and matched to 50Ω. An external DC block is required.
This pad is DC coupled and matched to 50Ω. DC bias is applied through this pad.
Die backside must be connected to RF/DC ground using silver filled conductive epoxy.
BACKSIDE
Notes:
1. All dimensions in inches [millimeters].
2. Die thickness is 0.004 [0.100].
3. Typical bond pad is 0.003x0.006
4. Backside metallization: Gold.
5. Bond pad metallization: Gold.
6. Backside is ground.
Die Dimensions
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or techni-
cal support, contact RFMD at (+1) 336-678-5570 or sales-sup-
EDS-106102 Rev A
5 of 6
Preliminary
SBB-5000
Device Assembly
Ordering Information
Part Number
Description
Devices/Container
SBB-5000
Bare Die
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or techni-
cal support, contact RFMD at (+1) 336-678-5570 or sales-sup-
6 of 6
EDS-106102 Rev A
©2020 ICPDF网 联系我们和版权申明