BAV16BPT [SIRECT]
Fast Switching Diode Array - 150mAmp 75Volt; 快速开关二极管阵列 - 150mAmp 75Volt
| 型号： | BAV16BPT |
| 厂家： | 
Sirectifier Global Corp. |
| 描述： | Fast Switching Diode Array - 150mAmp 75Volt |
| 文件： | 总2页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
E L E C T R O N I C
BAV16BPT
Fast Switching Diode Array – 150mAmp 75Volt
□ Features
-For surface mounted applications
-Low profile package
-Built-in strain relief
SOD-123
-Metal silicon junction, majority carrier conduction
-Low power loss, high efficiency
-High current capability, low forward voltage drop
-For use in low voltage high frequency inverters, free wheeling and polarity
protection application
.028(0.70)
.018(0.45)
.071(1.80)
.055(1.40)
-High temperature soldering guaranteed
-High reliability
-High surge current capability
.112(2.85)
.100(2.55)
.008(0.2)
-Lead free device
-ESD sensitive product handling required
.053(1.35)
.035(0.90)
□ Mechanical data
.020(0.50)
.004(0.12)
-Case：Molded plastic
-Polarity：Color band denotes cathode end
.153(3.90)
.140(3.55)
□ Maximum ratings and Electrical characteristics
TYPE
SYMBOL
VRM
BAV16BPT
UNIT
V
Maximum Non-Repetitive Peak Reverse Voltage
Maximum RMS Voltage
100
53
VRMS
V
Maximum Repetitive Peak Reverse and DC Blocking Voltage
Maximum Average Forward Rectified Current
VRRM ,VDC
IO
75
V
150
mA
@ t = 1.0uSec
2.0
1.0
Non-Repetitive Peak Forward urge Current
IFSM
A
V
@t = 1.0Sec
@ IF = 1.0mA
0.715
0.855
1.00
1.25
1.0
@ IF = 10mA
Maximum Instantaneous Forward Voltage
VF
@ IF = 50mA
@ IF = 150mA
@TJ = 25ºC
Maximum Average Reverse Current
IR
μA
@TJ = 150ºC
50
Typical Junction Capacitance (Note 1)
CJ
TRR
2.0
4.0
pF
Maximum Reverse Recovery Time (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
nSec
RθJA
625
ºC/W
ºC
Maximum Storage and Operating Temperature Range
Note: .1.Measured at 1.0 MHz and applied reverse voltage of 0 volts
TJ , TSTG
-65 - 150
August 2007 / Rev.5
2.Measured at applied forward current of 10mA and reverse current of 10mA
3.Device mounted on FR-4 by 1 inch x 0.85 inch x 0.062 inch
1
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BAV16BPT
1
100u
10u
1u
Ta = 100℃
75℃
50℃
100m
10m
1m
Ta = 85℃
100n
10n
1n
25℃
50℃
25℃
0℃
0℃
-25℃
-30℃
0.1n
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
20
30
40
50
60
70
80
FORWARD VOLTAGE , (V)
REVERSE VOLTAGE , (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
125
100
75
50
25
0
10
2
0
f = 1MHz
0
2
4
6
8
10
12
14
16
0
25
50
75
100
125
150
REVERSE VOLTAGE , (V)
AMBIENT TEMPERATURE ,℃
Figure 3. Typical Junction Capacitance
Figure 4. Forward Current Derating Curve
8
6
4
2
0
VR = 6V
0
2
4
6
8
10
FORWARD CURRENT , (mA)
Figure 5. Reverse Recovery Time
Sirectifier Global Corp., Delaware, U.S.A.
U.S.A.: sgc@sirectsemi.com
France: ss@sirectsemi.com
Taiwan: se@sirectsemi.com
Hong Kong: hk@sirectsemi.com
China: st@sirectsemi.com …Thailand: th@sirectsemi.com
Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com
2
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