BAV16P [SECOS]
Surface Mount Fast Switching Diode; 表面装载快速开关二极管
| 型号： | BAV16P |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Surface Mount Fast Switching Diode |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV16P
Elektronische Bauelemente
Surface Mount Fast Switching Diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOD-123
A
B
ƔFEATURES
C
E
.
.
.
.
.
Fast switching speed
Ultra-Small surface mount package
For general purpose switching applications
High conductance
H
D
Also available in lead free version
G
J
MILLMETERS
INCHES
MIN MAX
0.140 0.152
0.100 0.112
0.550 0.071
DIM MIN
MAX
3.85
2.85
1.80
1.35
0.78
------
0.25
0.15
3.55
2.55
1.40
------
0.30
0.15
-----
A
B
C
D
E
G
H
J
ƔMECHANICAL DATA
.
.
.
.
.
.
Case: SOD-123, Plastic
------
0.053
0.120 0.031
0.006 -------
Epoxy: UL 94V-0 rate flame retardant
Metallurgically bonded construction
Polarity: Color band denotes cathode end
Mounting position: Any
-------
-------
0.001
0.006
-----
Marking: T6, T4
Weight: 0.004 grams
ƔMAXIMUM RATINGS
Rating 25к ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
SYMBOL
VRM
VRRM
VRWM
VR
VALUE
100
UNITS
V
75
V
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0!µs
@ t = 1.0!s
VR(RMS)
IFM
IO
53
300
150
2.0
1.0
V
mA
mA
IFSM
A
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
PD
RșJA
TJ, TSTG
200
625
- 65 ~ + 150
mW
к / W
к
ht
t
p:/ /ww w.
S
eCoS GmbH.
c
om/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
BAV16P
Elektronische Bauelemente
Surface Mount Fast Switching Diode
ƔELECTRICAL CHARACTERISTICS (Ta=25к)
TYPE NUMBER
Reverse Breakdown Voltage
SYMBOL
VRM
Min.
75
Max.
-
UNITS
V
Test Condition
IR = 1.0µA
0.715
0.855
1.0
1.25
1.0
50
30
25
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 75V, TJ = 150ʚ
VR = 25V, TJ = 150ʚ
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1x IR, RL = 100ȍ
Forward Voltage (Note 2)
VFM
-
-
V
µA
µA
µA
nA
pF
Peak Reverse Current (Note 2)
IRM
Total Capacitance
Reverse Recovery Time
NOTES:
CT
trr
-
-
2.0
4.0
ns
1. Part mounted on FR-4 PC board with recommended pad layout,
2. Short duration test pulse used to minimize self-heating effect.
ƔRATING AND CHARACTERISTIC CURVES
300
1000
100
10
200
1.0
100
0.1
0
0.01
50
0
75
100
150
25
125
0
1
2
TA, AMBIE NT TE MP E R ATUR E (°C )
Fig. 1 P ower Derating C urve
VF, INS TANTANE OUS FOR WAR D VOLTAG E (V)
Fig. 2 Forward C haracteristics
10,000
1000
100
10
VR = 20V
1
0
100
200
Tj, J UNC TION TE MP E R ATUR E (°C )
Fig. 3 Leakage C urrent vs J unction Temperature
ht
t
p
:/ /ww w.
S
eCoS
G
mbH.
c
o
m/
Any changing of specification will not be inform
Page 2 of 2
01-Jun-2002 Rev. A
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