BAV16W [DIOTECH]
SURFACE MOUNT FAST SWITCHING DIODE; 表面装载快速开关二极管
| 型号： | BAV16W |
| 厂家： | 
DIOTECH COMPANY. |
| 描述： | SURFACE MOUNT FAST SWITCHING DIODE |
| 文件： | 总2页 (文件大小：608K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4148W / BAV16W
SURFACE MOUNT FAST SWITCHING DIODE
Features
●
High Conductance
●
●
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
A
SOD-123
Min
3.6
Dim
A
Max
3.9
●
●
C
B
2.5
2.8
D
C
1.4
1.8
B
D
0.5
0.7
E
—
0.2
E
G
H
0.4
—
Mechanical Data
H
0.95
—
1.35
0.12
●
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
G
J
●
J
All Dimensions in mm
●
●
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
Maximum Ratings @TA=25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
RM
V
Non-Repetitive Peak Reverse Voltage
100
V
RRM
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RWM
V
75
V
R
V
R(RMS)
V
RMS Reverse Voltage
53
V
FM
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
I
300
150
mA
mA
O
I
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
2.0
1.0
FSM
I
A
d
Power Dissipation (Note 1)
P
410
315
mW
K/W
°C
JA
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
R
j
STG
T, T
-65 to +150
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
F
FM
Forward Voltage Drop
Peak Reverse Leakage Current
@ I = 10mA
V
1.0
V
R
@ V = 20V
@ V = 75V
25
5.0
nA
µA
RM
I
R
R
j
Typical Junction Capacitance (V = 0V DC, f = 1.0MHz)
C
2.0
4.0
pF
nS
rr
Reverse Recovery Time (Note 2)
t
Note: 1. Valid provided that terminals are kept at ambient temperature.
F
R
RR
R
L
2. Measured with I = I = 10mA, I = 0.1 x I , R = 100
.
1N4148W / BAV16W
RATINGS AND CHARACTERISTIC CURVES
FIG.1- FORWARD CHARACTERISTICS
FIG.2- LEAKAGE CURRENT VS
JUNCTION TEMPERATURE
1000
100
10
10,000
1000
100
1.0
10
0.1
VR =20V
0.01
0
0
1
2
0
100
Tj, JUNCTION TEMPERATURE (OC)
200
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
FIG.3- ADMISSIBLE POWER DISSIPATION
VS AMBIENT TEMPERATURE
mw
500
400
300
200
Pd
100
50
0
0
100
200OC
Tamb
相关型号：
BAV16W-T1-LF
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
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