2SK2663 [SHINDENGEN]
HVX-2 Series Power MOSFET(900V 1A); HVX - 2系列功率MOSFET ( 900V 1A )型号: | 2SK2663 |
厂家: | SHINDENGEN ELECTRIC MFG.CO.LTD |
描述: | HVX-2 Series Power MOSFET(900V 1A) |
文件: | 总12页 (文件大小:426K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2663
( F1E90HVX2 )
Case : E-pack
(Unit : mm)
900V 1A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
●Switching power supply of AC 240V input
●High voltage power supply
●Inverter
RATINGS
●Absolute Maximum Ratings (Tc = 25℃)
Item
Symbol
Conditions
Ratings Unit
-55~150 ℃
150
stg
StorageTemperature
T
T
ch
ChannelTemperature
DSS
Drain-SourceVoltage
V
900
±30
1
2
1
10
1
10
1
V
Gate-SourceVoltage
VGSS
D
I
DP
I
S
I
PT
AR
I
ContinuousDrainCurrent(DC)
ContinuousDrainCurrent(Peak)
ContinuousSourceCurrent(DC)
TotalPowerDissipation
Pulsewidth≦10μs, Dutycycle≦1/100
A
W
ch
T =150℃
RepetitiveAvalancheCurrent
SingleAvalancheEnergy
A
mJ
AS
ch
T =25℃
E
AR
ch
T =25℃
RepetitiveAvalancheEnergy
E
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2663 ( F1E90HVX2 )
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Transconductance
V(BR)DSS ID = 1mA, VGS = 0V
900
V
μA
IDSS
IGSS
gfs
VDS = 900V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 0.5A, VDS = 10V
250
±0.1
0.6
2.5
1.0
10.5
3.0
S
Ω
V
Static Drain-Source On-state Resistance RDS(ON) ID = 0.5A, VGS = 10V
14
3.5
1.5
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
VTH
VSD
ID = 0.2mA, VDS = 10V
IS = 0.5A, VGS = 0V
θjc junction to case
12.5 ℃/W
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 400V, VGS = 10V, ID = 1A
10.5
230
5
23
10
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 25V, VGS = 0V, f = 1MHZ
pF
ID = 0.5A, VDD = 150V, RL = 300Ω
18
ns
Turn-Off Time
toff
50
85
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2663
Transfer Characteristics
2
1.5
1
Tc = - 55°C
25°C
100°C
150°C
0.5
0
V
TYP
= 25V
DS
0
5
10
15
20
Gate-Source Voltage VGS [V]
2SK2663 Static Drain-Source On-state Resistance
100
10
1
I = 0.5A
D
V
= 10V
GS
pulse test
TYP
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2663
Gate Threshold Voltage
6
5
4
3
2
1
0
V
= 10V
DS
I = 1mA
D
TYP
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2663
Safe Operating Area
10
1
100ms
200ms
R
0.1
DS(ON)
limit
1ms
10ms
DC
0.01
Tc = 25°C
Single Pulse
0.001
1
10
100
1000
Drain-Source Voltage VDS [V]
C ° / W ] j c q ( t ) [
T r a n s i e n t T h e r m a l I m p e d
2SK2663 Single Avalanche Energy Derating
100
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [°C]
2SK2663
Capacitance
1000
100
10
Ciss
Coss
Crss
f=1MHz
Ta=25°C
TYP
1
0
20
40
60
80
100
Drain-Source Voltage VDS [V]
A S
[ A ]
S i n g l e A v a l a n c h e C u r r e n t I
2SK2663
Power Derating
100
80
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
2SK2663
Gate Charge Characteristics
500
400
300
200
100
0
20
15
10
5
V
DS
V
GS
V
DD
= 400V
200V
100V
I = 1A
TYP
D
0
0
5
10
15
20
Gate Charge Qg [nC]
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