2SK2670 [SHINDENGEN]
HVX-2 Series Power MOSFET(900V 5A); HVX - 2系列功率MOSFET （ 900V 5A ）
| 型号： | 2SK2670 |
| 厂家： | 
SHINDENGEN ELECTRIC MFG.CO.LTD |
| 描述： | HVX-2 Series Power MOSFET(900V 5A) |
| 文件： | 总12页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2670
( F5S90HVX2 )
Case : STO-220
(Unit : mm)
900V 5A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
●Switching power supply of AC 240V input
●High voltage power supply
●Inverter
RATINGS
●Absolute Maximum Ratings （Tc = 25℃）
Item
Symbol
Conditions
Ratings Unit
-55～150 ℃
150
stg
StorageTemperature
T
T
ch
ChannelTemperature
DSS
Drain-SourceVoltage
V
900
±30
5
10
5
60
5
100
10
V
Gate-SourceVoltage
VGSS
D
I
DP
I
S
I
PT
AR
I
ContinuousDrainCurrent（DC）
ContinuousDrainCurrent（Peak)
ContinuousSourceCurrent（DC）
TotalPowerDissipation
Pulsewidth≦10μs, Dutycycle≦1/100
A
W
ch
T =150℃
RepetitiveAvalancheCurrent
SingleAvalancheEnergy
A
mJ
AS
ch
T =25℃
E
AR
ch
T =25℃
RepetitiveAvalancheEnergy
E
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2670 ( F5S90HVX2 )
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
V(BR)DSS ID = 1mA, VGS = 0V
900
V
μA
IDSS
IGSS
gfs
VDS = 900V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 2.5A, VDS = 10V
250
±0.1
2.4
2.5
4.0
2.1
3.0
S
Ω
V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 2.5A, VGS = 10V
2.8
3.5
1.5
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
VTH
VSD
ID = 1mA, VDS = 10V
IS = 2.5A, VGS = 0V
θjc junction to case
2.08 ℃/Ｗ
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 400V, VGS = 10V, ID =5A
45
1140
23
105
55
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 25V, VGS = 0V, f = 1MHZ
ID = 2.5A, VGS = 10V, RL = 60Ω
pF
100
ns
Turn-Off Time
toff
210 350
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2670
Transfer Characteristics
10
8
Tc = - 55°C
25°C
100°C
150°C
6
4
2
V
DS
= 25V
TYP
0
0
5
10
15
20
Gate-Source Voltage VGS [V]
2SK2670 Static Drain-Source On-state Resistance
100
10
1
I = 2.5A
D
V
GS
= 10V
pulse test
TYP
0.1
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2670
Gate Threshold Voltage
6
5
4
3
2
1
0
V
= 10V
DS
I = 1mA
D
TYP
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2670
Safe Operating Area
10
100ms
200ms
1
R
DS(ON)
limit
1ms
10ms
DC
0.1
Tc = 25°C
Single Pulse
0.01
1
10
100
1000
Drain-Source Voltage VDS [V]
C ° / W ] j c q ( t ) [
T r a n s i e n t T h e r m a l I m p e d
2SK2670 Single Avalanche Energy Derating
100
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [°C]
2SK2670
Capacitance
10000
1000
100
10
Ciss
Coss
Crss
f=1MHz
Ta=25°C
TYP
1
0
20
40
60
80
100
Drain-Source Voltage VDS [V]
A S
[ A ]
S i n g l e A v a l a n c h e C u r r e n t I
2SK2670
Power Derating
100
80
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
2SK2670
Gate Charge Characteristics
500
400
300
200
100
0
20
15
10
5
V
DS
V
GS
V
DD
= 400V
200V
100V
I = 5A
TYP
D
0
0
20
40
60
80
100
Gate Charge Qg [nC]
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