2SK2675 [SHINDENGEN]
HVX-2 Series Power MOSFET(900V 7A); HVX - 2系列功率MOSFET （ 900V 7A ）
| 型号： | 2SK2675 |
| 厂家： | 
SHINDENGEN ELECTRIC MFG.CO.LTD |
| 描述： | HVX-2 Series Power MOSFET(900V 7A) |
| 文件： | 总12页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2675
Case : ITO-3P
(Unit : mm)
(FP7W90HVX2)
900V 7A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
●Switching power supply of AC 240V input
●High voltage power supply
●Inverter
RATINGS
●Absolute Maximum Ratings （Tc = 25℃）
Item
Symbol
Tstg
Tch
VDSS
VGSS
ID
Conditions
Ratings
Unit
℃
Storage Temperature
-55～150
Channel Temperature
150
900
±30
7
14
7
55
7
160
16
2
Drain-Source Voltage
V
A
Gate-Source Voltage
Continuous Drain Current（DC）
Continuous Drain Current（Peak)
Continuous Source Current（DC）
Total Power Dissipation
Repetitive Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Energy
Dielectric Strength
IDP
IS
PT
Pulse width≦10μs, Duty cycle≦1/100
W
A
mJ
IAR
Tch = 150℃
EAS
EAR
Vdis
Tch = 25℃
Tch = 25℃
Terminals to case,ꢀAC 1 minute
kV
Mounting Torque
TOR （ Recommended torque ：0.5 N･m ）
0.8
N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2675 ( FP7W90HVX2 )
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
V(BR)DSS ID = 1mA, VGS = 0V
900
V
μA
IDSS
IGSS
gfs
VDS = 900V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 3.5A, VDS = 10V
250
±0.1
3.6
2.5
6.0
1.5
3.0
S
Ω
V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 3.5A, VGS = 10V
2.0
3.5
1.5
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
VTH
VSD
ID = 1mA, VDS = 10V
IS = 3.5A, VGS = 0V
θjc junction to case
2.27 ℃/Ｗ
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 400V, VGS = 10V, ID = 7A
63
1450
37
150
95
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 25V, VGS = 0V, f = 1MHZ
ID = 3.5A, RL = 43Ω, VGS = 10V
pF
170
ns
Turn-Off Time
toff
330 560
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2675
Transfer Characteristics
14
12
10
8
Tc = - 55°C
25°C
100°C
150°C
6
4
2
V
DS
= 25V
TYP
0
0
5
10
15
20
Gate-Source Voltage VGS [V]
2SK2675 Static Drain-Source On-state Resistance
100
10
I = 3.5A
D
1
0.1
V
GS
= 10V
pulse test
TYP
0.01
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2675
Gate Threshold Voltage
6
5
4
3
2
1
0
V
= 10V
DS
I = 1mA
D
TYP
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2675
Safe Operating Area
100
10
100ms
200ms
1
R
limit
DS(ON)
1ms
10ms
DC
0.1
Tc = 25°C
Single Pulse
0.01
1
10
100
1000
Drain-Source Voltage VDS [V]
C ° / W ] j c q ( t ) [
T r a n s i e n t T h e r m a l I m p e d
2SK2675 Single Avalanche Energy Derating
100
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [°C]
2SK2675
Capacitance
10000
1000
100
10
Ciss
Coss
Crss
f=1MHz
Ta=25°C
TYP
1
0
20
40
60
80
100
Drain-Source Voltage VDS [V]
A S
[ A ]
S i n g l e A v a l a n c h e C u r r e n t I
2SK2675
Power Derating
100
80
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
2SK2675
Gate Charge Characteristics
500
400
300
200
100
0
20
15
10
5
V
DS
V
DD
= 400V
V
GS
200V
100V
I = 7A
D
TYP
0
0
20
40
60
80
100
Gate Charge Qg [nC]
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