PC3H41XNIP [SHARP]
AC Input, Low Input Current Type Photocoupler; AC输入，低输入电流型光耦合器
| 型号： | PC3H41XNIP |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | AC Input, Low Input Current Type Photocoupler |
| 文件： | 总5页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PC3H41X NIP Series/PC3Q410NIP
AC Input, Low Input Current
Type Photocoupler
PC3H41X NIP Series
PC3Q410 NIP
■ Outline Dimensions
■ Features
(Unit : mm)
1. Low input current type (IF=±0.5mA)
2. High resistance to noise due to high common rejection
voltage (CMR:MIN. 10kV/µs)
PC3H41xNIP Series
Internal connection
diagram
Anode mark
4
1
3
1
2
4
3
1
2
Anode
(Cathode)
3. AC input type
Cathode
(Anode)
H 4 1
4.4±0.2
4. Mini-flat package PC3H41X NIP Series (1ch)
PC3Q410 NIP (4ch)
3
4
Emitter
Collector
2
5. Isolation voltage (Viso:2.5kVrms)
6. Recognized by UL, file No. E64380
5.3±0.3
Epoxy resin
■ Applications
1. Programmable controllers
2. Facsimiles
+0.4
0.5
−0.2
+0.2
7.0
−0.7
3. Telephones
PC3Q410NIP
■ Rank Table
10.3±0.3
Internal connection
diagram
Model No.
Rank mark
Ic (mA)
0.25 to 2.0
0.5 to 1.5
Conditions
1.27±0.25
16 15 14 13 12 11 10
9
IF=±0.5mA
VCE=5V
Ta=25°C
PC3H410NIP A or no mark
16
9
A
PC3H411NIP
Model No.
Rank mark
No mark
Ic (mA)
Conditions
P C 3 Q 4 1
IF=±0.5mA
VCE=5V
Ta=25°C
1
2
3
4
5
6 7
8
0.25 to 2.0
PC3Q410NIP
1
2
9
3
5
6
7
Anode (Cathode)
Cathode (Anode)
Emitter
4
8
11 13 15
0.4±0.1
8
1
■ Absolute Maximum Ratings
(Ta=25°C)
10 12 14 16
Collector
Primary side mark
Parameter
Symbol
Rating
±10
±200
15
Unit
mA
mA
mW
IF
Forward current
*1 Peak forward current
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*2 Isolation voltage
C0.4
(Input side)
Epoxy resin
Input
IFM
5.3±0.3
P
VCEO
VECO
IC
V
70
+0.4
V
6
0.5
−0.2
Output
+0.2
50
mA
mW
mW
7.0
−0.7
PC
150
170
Ptot
Topr
Tstg
Viso
Tsol
−30 to +100
−40 to +125
°C
°C
kVrms
°C
2.5
260
*3
Soldering temperature
*1 Pulse width<=100µs, Duty ratio=0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
0.2mm or more
Soldering area
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC3H41X NIP Series/PC3Q410NIP
■ Electro-optical Characteristics
(Ta=25°C)
Parameter
Symbol
Conditions
IF=±10mA
MIN.
TYP.
1.2
30
MAX.
1.4
250
100
−
Unit
V
pF
Forward voltage
VF
Ct
−
−
−
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
V=0, f=1kHz
−
ICEO
BVCEO
BVECO
IC
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
nA
V
−
−
70
6
−
V
2.0
0.2
−
mA
V
IF=±0.5mA, VCE=5V
IF=±10mA, IC=1mA
DC500V 40 to 60%RH
V=0, f=1MHz
0.25
−
5×1010
−
−
−
−
−
1011
0.6
4
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
VCE (sat)
RISO
Cf
Ω
pF
µs
µs
1.0
18
18
tr
Rise time
Response time
VCE=2V, IC=2mA, RL=100Ω
Fall time
tf
3
Ta=25°C, RL=470Ω, VCM=1.5kV (peak),
IF=0mA, VCC=9V, Vnp=100mV
*1
−
kV/µs
−
Common mode rejection voltage
CMR
10
*1 Refer to Fig.1.
Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/dt)
VCM
1)
VCC
Vnp
Vcp
RL
Vnp
VO
V
CM : High wave
pulse
RL=470Ω
CC=9V
(Vcp Nearly = dV/dt×Cf×RL)
VCM
1) Vcp : Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
V
Fig.2 Forward Current vs. Ambient
Temperature
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
15
10
10
5
0
5
0
−30
0
25
50
75
100
125
−30
0
25
50
75
100
125
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
PC3H41X NIP Series/PC3Q410NIP
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
Fig.5 Total Power Dissipation vs. Ambient
Temperature
200
150
100
200
170
150
100
50
0
50
0
−30
0
25
50
75
100
125
−30
0
25
50
75
100
125
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.6 Peak Forward Current vs. Duty Ratio
Fig.7 Forward Current vs. Forward Voltage
100
2000
1000
500
Pulse width <=100µs
Ta=25°C
10
200
100
50
Ta=25°C
Ta=100°C
Ta=0°C
Ta=75°C
Ta=50°C
1
Ta=−25°C
20
10
0.1
10−3
2
5
10−2
Duty ratio
2
5
10−1
2
5
1
0
0.5
1.0
1.5
2.0
5
Forward voltage VF (V)
Fig.8 Current Transfer Ratio vs. Forward
Current
Fig.9 Current Transfer Ratio vs. Forward
Current
PC3H41xNIP Series
PC3Q410NIP
600
500
VCE=5V
VCE=5V
Ta=25°C
Ta=25°C
500
400
300
200
400
300
200
100
0
100
0
0.1
1
10
0.1
1
10
Forward current IF (mA)
Forward current IF (mA)
PC3H41X NIP Series/PC3Q410NIP
Fig.10 Collector Current vs. Collector-emitter
Fig.11 Collector Current vs. Collector-emitter
Voltage
Voltage
PC3Q410NIP
PC3H41xNIP Series
40
40
Ta=25°C
Ta=25°C
PC (MAX.)
PC (MAX.)
30
30
IF=7mA
IF=7mA
20
20
IF=5mA
IF=3mA
IF=5mA
IF=3mA
IF=2mA
10
10
IF=2mA
IF=0.5mA
IF=1mA
IF=0.5mA
IF=1mA
0
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
Fig.12 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.13 Relative Current Transfer Ratio vs.
Ambient Temperature
PC3H41xNIP Series
PC3Q410NIP
150
150
VCE=5V
IF=0.5mA
VCE=5V
IF=0.5mA
100
100
50
0
50
0
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.15 Collector Dark Current vs. Ambient
Temperature
Fig.14 Collector - emitter Saturation Voltage
vs. Ambient Temperature
10−5
0.16
VCE=50V
IF=10mA
IC=1mA
0.14
10−6
10−7
10−8
10−9
0.12
0.10
0.08
0.06
0.04
10−10
10−11
0.02
0
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
PC3H41X NIP Series/PC3Q410NIP
Fig.16 Response Time vs. Load Resistance
Fig.17 Response Time vs. Load Resistance
(Saturation)
1000
1000
VCE=2V
IC=2mA
Ta=25°C
VCC=5V
IF=16mA
Ta=25°C
tf
100
100
10
tf
td
ts
10
ts
tr
td
1
1
tr
0.1
0.1
0.1
1
10
1
10
Load resistance RL (kΩ)
100
Load resistance RL (kΩ)
Fig.18 Test Circuit for Response Time
Fig.19 Voltage Gain vs Frequency
5
VCC
VCE=2V
IC=2mA
Ta=25°C
0
−5
RL
RD
Input
Input
Output
RL=10kΩ
Output
10%
90%
1kΩ
−10
−15
ts
tf
td
tr
100Ω
−20
−25
0.1
1
10
Frequency f (kHz)
100
1000
Fig.20 Collector-emitter Saturation Voltage
Fig.21 Reflow Soldering
vs. Forward Current
5
Only one time soldering is recommended within the temperature
profile shown below.
IC=7mA
Ta=25°C
230°C
IC=5mA
4
IC=3mA
IC=2mA
200°C
180°C
3
IC=1mA
IC=0.5mA
2
1
0
25°C
30s
1min
0
2
4
6
8
10
2min
1.5min
1min
Forward current IF (mA)
相关型号：
PC3H4Y1J000F
AC Input-Transistor Output Optocoupler, 1-Element, 2500V Isolation, ROHS COMPLIANT, PLASTIC, MINIFLAT-4
SHARP
PC3H4YJ0000F
AC Input-Transistor Output Optocoupler, 1-Element, 2500V Isolation, ROHS COMPLIANT, PLASTIC, MINIFLAT-4
SHARP
PC3H510NIP0F
Mini-flat Half Pitch Package, Darlington Phototransistor Output, Low Input Current Photocoupler
SHARP
PC3H5J00000F
Darlington Output Optocoupler, 1-Element, 2500V Isolation, ROHS COMPLIANT, PLASTIC, MINIFLAT-4
SHARP
©2020 ICPDF网 联系我们和版权申明