SGM48510 [SGMICRO]
11A High-Speed Low-Side MOSFET Driver;
| 型号： | SGM48510 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | 11A High-Speed Low-Side MOSFET Driver |
| 文件： | 总14页 (文件大小：793K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM48510
11A High-Speed
Low-Side MOSFET Driver
GENERAL DESCRIPTION
FEATURES
The SGM48510 is a high-speed low-side gate driver for
MOSFET power switches. It provides large peak
source and sink current capability with capacitive loads.
● Input Voltage Range: 4.5V to 24V
● 11A Source and 6A Sink Peak Currents
● TTL and CMOS Compatible Logic Threshold
● Logic Levels Independent of Supply Voltage
● Fast Rise Time: 4ns (TYP)
The SGM48510 adopts separate output architecture.
The separate output architecture allows independent
control of the turn-on and turn-off speeds. An 8A peak
current at the Miller plateau region improves the
immunity of the device to the parasitic Miller conduction
effect during switching transitions of the MOSFETs.
● Fast Fall Time: 4ns (TYP)
● Fast Propagation Delays: 13ns (TYP)
● Separate Pull-Up and Pull-Down Outputs
● Dual Input Design (Choice of an Inverting (IN-) or
Non-Inverting (IN+) Driver Configuration)
● Available in Green TDFN-2×2-8AL and SOIC-8
Packages
The SGM48510 is available in Green TDFN-2×2-8AL
and SOIC-8 packages.
APPLICATIONS
Telecom Switch Mode Power Supplies
Power Factor Correction (PFC) Circuits
Solar Power Supplies
Motor Drives
High Frequency Line Drivers
Pulse Transformer Drivers
High Power Buffers
TYPICAL APPLICATION
VSOURCE
VDD
L1
SGM48510
D1
6
1
8
7
VDD
12V
VOUT
VDD
IN+
IN-
VDD
OUTH
OUTL
C1
Q1
R1
R2
5
4
VIN+
+
C2
GND
2, 3
Figure 1. Typical Application Circuit
SG Micro Corp
www.sg-micro.com
DECEMBER 2022 – REV. A
11A High-Speed
SGM48510
Low-Side MOSFET Driver
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
MBZ
XXXX
SGM
48510XS8
XXXXX
TDFN-2×2-8AL
SOIC-8
SGM48510XTDE8G/TR
Tape and Reel, 3000
Tape and Reel, 4000
-40℃ to +125℃
SGM48510
SGM48510XS8G/TR
-40℃ to +125℃
MARKING INFORMATION
NOTE: XXXX = Date Code, Trace Code and Vendor Code. XXXXX = Date Code, Trace Code and Vendor Code.
TDFN-2×2-8AL
SOIC-8
X X X X X
Serial Number
Y Y Y
X X X X
Vendor Code
Trace Code
Vendor Code
Trace Code
Date Code - Year
Date Code - Year
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
OVERSTRESS CAUTION
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
Supply Voltage, VDD........................................... -0.3V to 28V
Output Current (DC), IOUT_DC...........................................0.6A
Output Current (1), IOUT_PULSE ............................................11A
Input Voltages, VIN+, VIN- ....................................... -6V to 24V
Output Voltages, VOUTH, VOUTL .................-0.3V to VDD + 0.3V
Output Voltages (Pulse < 0.5µs), VOUTH, VOUTL
.................................................................-3.0V to VDD + 3.0V
Package Thermal Resistance
ESD SENSITIVITY CAUTION
TDFN-2×2-8AL, θJA.................................................... 63℃/W
SOIC-8, θJA .............................................................. 131℃/W
Junction Temperature.................................................+150℃
Storage Temperature Range.......................-65℃ to +150℃
Lead Temperature (Soldering, 10s)............................+260℃
ESD Susceptibility
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failureto observe proper handlingand installation procedures
can cause damage. ESD damage can range from subtle
performance degradation tocomplete device failure. Precision
integrated circuits may be more susceptible to damage
because even small parametric changes could cause the
device not to meet the published specifications.
HBM.............................................................................3000V
CDM ............................................................................1000V
RECOMMENDED OPERATING CONDITIONS
Supply Voltage, VDD.............................................4.5V to 24V
Input Voltages, VIN+, VIN- ....................................... -5V to 24V
Operating Junction Temperature Range......-40℃ to +125℃
DISCLAIMER
SG Micro Corp reserves the right to make any change in
circuit design, or specifications without prior notice.
NOTE:
1. A 1μF load is connected from OUT (OUTH shorted to
OUTL) to GND with 1kHz square wave input.
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
2
11A High-Speed
SGM48510
Low-Side MOSFET Driver
PIN CONFIGURATIONS
(TOP VIEW)
(TOP VIEW)
IN+
GND
1
2
3
4
8
7
6
5
IN-
IN+
GND
1
2
3
4
8
7
6
5
IN-
VDD
VDD
OUTH
VDD
VDD
OUTH
GND
GND
GND
OUTL
OUTL
TDFN-2×2-8AL
SOIC-8
PIN DESCRIPTION
PIN
1
NAME
IN+
I/O
I
FUNCTION
Non-Inverting Input. The input threshold is compatible with TTL and CMOS logic. Connect IN+ to
the VDD pin if unused. Do not leave this pin open.
Ground. Reference pin for all signals. Connect GND as close to the source of the power MOSFET
as possible.
2, 3
4
GND
OUTL
OUTH
VDD
IN-
G
O
O
P
Driver Sink Current Output. Connect it to the gate of an external MOSFET.
Driver Source Current Output. Connect it to the gate of an external MOSFET.
Power Supply Input.
5
6, 7
8
Inverting Input. The input threshold is compatible with TTL and CMOS logic. Connect IN- to the
GND pin if unused. Do not leave this pin open.
I
Exposed
Pad
GND
—
Exposed Pad. It should be soldered to PCB board and connected to GND.
NOTE: I: input, O: output, G: ground, P: power for the circuit.
Table 1. Device Logic Table
OUT
IN+
IN-
OUTH
OUTL
(OUTH and OUTL Tied Together)
L
L
L
H
L
High-Z
High-Z
H
L
L
L
L
High-Z
L
H
H
H
L
H
High-Z
SG Micro Corp
DECEMBER 2022
www.sg-micro.com
3
11A High-Speed
SGM48510
Low-Side MOSFET Driver
ELECTRICAL CHARACTERISTICS
(VDD = 12V, C1 = 1μF, TA = TJ = -40℃ to +125℃, typical values are at TA = +25℃, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
Operating Current
IDD
No switching
VDD rising
0.5
3.9
3.6
300
10
1
mA
V
VCCR
VCCF
VCCH
3.7
3.4
4.1
3.9
VDD Under-Voltage Lockout Voltage
VDD falling
V
VDD Under-Voltage Lockout Voltage Hysteresis
VDD Under-Voltage Lockout to Output Delay
Inputs
mV
µs
VDD rising from 3V to 5V
Input Signal High Threshold
Input Signal Low Threshold
Input Signal Hysteresis
IN- Pull-Up Resistor
VTHH
VTHL
Input rising from logic low
Input falling from logic high
1.8
1.1
2.1
1.3
0.8
200
200
2.3
1.5
V
V
VIN_HYS
RIN-
V
kΩ
kΩ
IN+ Pull-Down Resistor
Outputs
RIN+
Output Pull-Up Resistance
Output Pull-Down Resistance
Peak Source Current
ROH
ROL
IOUT = -100mA
IOUT = +100mA
0.4
0.4
11
8
0.8
0.8
Ω
Ω
A
A
A
A
ISOURCE CLOAD = 1μF connected to GND, fPWM = 1kHz
ISOURCE CLOAD = 1μF connected to 5V, fPWM = 1kHz
Miller Plateau Source Current
Peak Sink Current
ISINK
ISINK
CLOAD = 1μF connected to GND, fPWM = 1kHz
CLOAD = 1μF connected to 5V, fPWM = 1kHz
6
Miller Plateau Sink Current
Switching Characteristics
Rise Time (1)
6
tR
tF
CLOAD = 1.8nF
CLOAD = 1.8nF
CLOAD = 1.8nF
CLOAD = 1.8nF
4
4
ns
ns
ns
ns
Fall Time (1)
tD1
tD2
13
13
Input to Output Propagation Delay (1)
NOTE:
1. See timing diagrams as shown in Figure 2 and Figure 3.
TIMING DIAGRAMS
2.1V
2.1V
Input
(IN- Pin)
1.3V
Input
(IN+ Pin)
1.3V
90%
90%
Output
(OUT Pin)
10%
Output
(OUT Pin)
10%
tD1 tR
tD2 tF
tD1 tF
tD2 tR
Figure 2. Non-Inverting Configuration
Figure 3. Inverting Configuration
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
4
11A High-Speed
SGM48510
Low-Side MOSFET Driver
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current vs. Switching Frequency
Supply Current vs. Switching Frequency
160
140
120
100
80
100
80
60
40
20
0
— CLOAD = 470pF
— CLOAD = 1nF
— CLOAD = 2.2nF
— CLOAD = 4.7nF
— CLOAD = 10nF
VDD = 12V
— CLOAD = 470pF
— CLOAD = 1nF
— CLOAD = 2.2nF
— CLOAD = 4.7nF
— CLOAD = 10nF
VDD = 4.5V
60
40
20
0
0
400
800
1200
1600
2000
0
400
800
1200
1600
2000
Switching Frequency (kHz)
Switching Frequency (kHz)
Rise Time vs. Temperature
Fall Time vs. Temperature
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
4.4
4.2
4.0
3.8
3.6
3.4
3.2
— VDD = 5V
— VDD = 5V
CLOAD = 1.8nF
CLOAD = 1.8nF
— VDD = 10V
— VDD = 15V
— VDD = 20V
— VDD = 10V
— VDD = 15V
— VDD = 20V
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75
100 125
Temperature (℃)
Temperature (℃)
Reverse Current
Reverse Current
12
10
8
12
10
8
TJ = +25℃
TJ = +25℃
6
6
4
4
2
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
VOUTH - VDD (V)
VOUTL (V)
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
5
11A High-Speed
SGM48510
Low-Side MOSFET Driver
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Propagation Delay (tD1) vs. Supply Voltage
Propagation Delay (tD2) vs. Supply Voltage
20
18
16
14
12
10
16
14
12
10
8
— CLOAD = 1nF
— CLOAD = 2.2nF
— CLOAD = 4.7nF
— CLOAD = 10nF
— CLOAD = 1nF
— CLOAD = 2.2nF
— CLOAD = 4.7nF
— CLOAD = 10nF
6
4
4
4
6
8
10 12 14 16 18 20 22
4
6
8
10 12 14 16 18 20 22
Supply Voltage (V)
Supply Voltage (V)
Supply Current vs. Supply Voltage
Supply Current vs. Supply Voltage
100
80
60
40
20
0
150
120
90
60
30
0
— fSW = 2MHz
— fSW = 1MHz
— fSW = 500kHz
— fSW = 300kHz
— fSW = 100kHz
— fSW = 2MHz
— fSW = 1MHz
— fSW = 500kHz
— fSW = 300kHz
— fSW = 100kHz
CLOAD = 2.2nF
CLOAD = 4.7nF
6
8
10 12 14 16 18 20 22
4
6
8
10 12 14 16 18 20 22
Supply Voltage (V)
Supply Voltage (V)
Supply Current vs. Supply Voltage
1.0
0.8
0.6
0.4
0.2
0.0
— IN+ = VDD
— GND and VDD
— IN- = VDD
8
12
16
20
24
Supply Voltage (V)
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
6
11A High-Speed
SGM48510
Low-Side MOSFET Driver
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Non-Inverting Input Rise Time
Non-Inverting Input Fall Time
CLOAD = 1.8nF
CLOAD = 1.8nF
VOUT
VOUT
Time (10ns/div)
Time (10ns/div)
Non-Inverting Input Propagation Delays
Non-Inverting Input Propagation Delays
CLOAD = 1.8nF
CLOAD = 1.8nF
VIN+
VOUT
VIN+
VOUT
Time (10ns/div)
Time (10ns/div)
Inverting Input Rise Time
Inverting Input Fall Time
CLOAD = 1.8nF
CLOAD = 1.8nF
VIN-
VOUT
VOUT
VIN-
Time (10ns/div)
Time (10ns/div)
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
7
11A High-Speed
SGM48510
Low-Side MOSFET Driver
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Inverting Input Propagation Delays
Inverting Input Propagation Delays
CLOAD = 1.8nF
CLOAD = 1.8nF
VIN-
VOUT
VOUT
VIN-
Time (10ns/div)
Time (10ns/div)
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
8
11A High-Speed
SGM48510
Low-Side MOSFET Driver
FUNCTIONAL BLOCK DIAGRAM
VDD
SGM48510
Input
Protection
IN+
1
8
2
3
7
6
VDD
VDD
REF
REF
VDD
200kΩ
VDD
Logic
VDD
200kΩ
Input
Protection
IN-
VDD
GND
GND
5
4
OUTH
OUTL
UVLO
Figure 4. SGM48510 Block Diagram
DETAILED DESCRIPTION
• Turn-on and turn-off current loop paths (driver
devices, power switches, and VDD bypass
capacitors) should be minimized to keep stray
inductance to a minimum.
PCB Layout
Proper PCB layout is an important design step in high
current, fast switching circuits to provide proper device
operation and design robustness. The SGM48510 gate
driver integrates a short propagation delay and a
powerful output stage, providing separate output
architecture capable of delivering large current peaks
with very fast rise time and fall time at the gate of the
power switch. Very high di/dt can cause unacceptable
ringing if trace length and impedance are not well
controlled. The recommended layout guidelines are as
follows in the design.
• Wherever possible, parallel the source and return
traces of a current loop, taking advantage of flux
cancellation.
• Separate power and signal traces, such as output
and input signals.
• Adding some gate resistors and/or snubbers can
reduce switch node transients and ringing. These
measures also reduce EMI.
• Place the driver device as close as possible to the
power device to minimize the length of high-current
traces between the driver output pins and the gate of
the power switch device.
• Use a ground plane to provide noise shielding. Do
not use the ground plane as the current carrying
path for any current loop. In addition to noise
shielding, the ground plane also helps reduce power
dissipation.
• Place bypass capacitors between the VDD and GND
pins as close as possible to the driver pins to
minimize trace length and improve noise filtering.
These capacitors support high peak current draw
from VDD during power switch on. Low inductance
surface mount components such as chip capacitors
are strongly recommended.
• Unused pins should be configured by referring to the
pin description table to avoid output indeterminate
states.
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
9
11A High-Speed
SGM48510
Low-Side MOSFET Driver
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (DECEMBER 2022) to REV.A
Page
Changed from product preview to production data.............................................................................................................................................All
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
10
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
TDFN-2×2-8AL
D
e
N8
D1
L
k
E1
E
N1
PIN 1#
DETAIL A
b
BOTTOM VIEW
TOP VIEW
SEATING PLANE
eee C
1.60
0.50
A
C
A2
A1
0.90 1.90
SIDE VIEW
ALTERNATE A-1 ALTERNATE A-2
0.25
0.50
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTION
RECOMMENDED LAND PATTERN (Unit: mm)
Dimensions In Millimeters
Symbol
MIN
MOD
0.750
-
MAX
0.800
0.050
A
A1
A2
b
0.700
0.000
0.203 REF
0.250
2.000
1.600
2.000
0.900
0.250
0.500
0.300
0.080
0.200
1.900
1.450
1.900
0.750
0.150
0.450
0.200
0.300
2.100
1.700
2.100
1.000
0.350
0.550
0.400
D
D1
E
E1
k
e
L
eee
NOTE: This drawing is subject to change without notice.
SG Micro Corp
TX00184.003
www.sg-micro.com
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
SOIC-8
0.6
D
e
2.2
E1
E
5.2
b
1.27
RECOMMENDED LAND PATTERN (Unit: mm)
L
A
A1
c
θ
A2
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
MIN
MAX
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
c
D
E
E1
e
1.27 BSC
0.050 BSC
L
0.400
0°
1.270
8°
0.016
0°
0.050
8°
θ
NOTES:
1. Body dimensions do not include mode flash or protrusion.
2. This drawing is subject to change without notice.
SG Micro Corp
TX00010.000
www.sg-micro.com
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
TDFN-2×2-8AL
SOIC-8
7″
9.5
2.30
6.40
2.30
5.40
1.10
2.10
4.0
4.0
4.0
8.0
2.0
2.0
8.0
Q1
Q1
13″
12.4
12.0
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
7″ (Option)
368
442
386
227
410
280
224
224
370
8
18
5
7″
13″
SG Micro Corp
www.sg-micro.com
TX20000.000
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