ER1G-T3 [SENSITRON]
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN;
| 型号： | ER1G-T3 |
| 厂家： | 
SENSITRON |
| 描述： | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN 光电二极管 |
| 文件： | 总3页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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1.00
Tj = 25°C
Single phase half wave
Resistive or Inductive load
Pulse width = 300µs
10
0.75
0.50
0.25
ER1E - ER1G
ER1A - ER1D
1.0
ER1J
0.1
0.01
100
0
0
25
50
75
100 125
150 175
( ° C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TL, LEAD TEMPERATURE
Fig. 1 Forward Current Derating Curve
30
Tj = 25°C
f = 1.0MHz
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
20
10
0
10
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Pea Forward Surge Current
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
ER1A – ER1J
2 of 2
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SEMICONDUCTOR
TECHNICAL DATA
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相关型号：
ER1G-T3-LF
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
WTE
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