ER1GF [SUNMATE]
1.0A patch fast recovery diode 400V SMAF series;
| 型号： | ER1GF |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1.0A patch fast recovery diode 400V SMAF series |
| 文件： | 总2页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ER1AF - ER1JF
SURFACE MOUNT SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 600V
CURRENT: 1.0 A
Features
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Glass Passivated Die Construction
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
C
E
SMAF
Dim Min Max Typ
Mechanical Data
D
A
B
C
D
E
H
L
4.75 4.85
3.68 3.72
4.80
3.70
2.60
1.00
!
!
Case: SMAF,Molded Plastic
H
Terminals: Solder Plated, Solderable
2.57
2.63
L
0.097 1.03
per MIL-STD-750, Method 2026
Polarity:Color band denotes cathode end
Mounting Position:Any
1.38 1.42 1.40
0.13 0.17 0.15
0.63 0.67 0.65
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!
E
All Dimensions in mm
Weight:0.0018 ounce, 0.064 grams
A
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol ER1AF ER1BF ER1CF ER1DF ER1EF ER1GF ER1JF
Characteristic
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
50
35
100
70
150
105
200
300
210
400
280
600
420
V
V
R
RMS Reverse Voltage
V
R(RMS)
140
1.0
V
A
Average Rectified Output Current
@TL = 100°C
I
O
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
30
A
Forward Voltage
@IF = 1.0A
V
FM
0.95
1.25
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
500
I
RM
µA
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
t
rr
35
10
nS
pF
C
j
R
ꢀJL
34
K/W
°C
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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Tj = 25°C
Pulse width = 300µs
10
ER1EF - ER1GF
ER1AF - ER1DF
1.0
ER1JF
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
30
20
10
0
100
Tj = 25°C
f = 1.0MHz
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
10
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Pea Forward Surge Current
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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