ER1GA [MDD]
SURFACE MOUNT SUPER FAST RECTIFIER; 表面装载超快速整流器
| 型号： | ER1GA |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SUPER FAST RECTIFIER |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ER1A THRU ER1J
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere
DO-214AC/SMA
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
0.110(2.80)
0.100(2.54)
0.067 (1.70)
0.051 (1.30)
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.177(4.50)
0.157(3.99)
Glass passivated chip junction
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
MECHANICAL DATA
0.060(1.52)
0.030(0.76)
Case: JEDEC DO-214AC molded plastic body over passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
0.008(0.203)MAX.
0.208(5.28)
0.188(4.80)
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.002 ounce, 0.07 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
UNITS
ER1A ER1B ER1C ER1D ER1E ER1G ER1J
MDD Catalog
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
150 200 300
105 140 210
150 200 300
400
280
400
600
420
600
VOLTS
VOLTS
VOLTS
VRRM
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=55 C
I(AV)
1.0
Amp
Peak forward surge current
IFSM
VF
30.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
0.95
1.25
Maximum instantaneous forward voltage at 1.0A
1.7
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=100 C
(NOTE 1)
5.0
50.0
µ
A
IR
trr
ns
35
15.0
Typical junction capacitance (NOTE 2)
CJ
RθJA
pF
C/W
C
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
60.0
TJ,TSTG
-65 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES ER1A THRU ER1J
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
1,000
100
10
20
10
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
TJ=100 C
1
0.1
ER1A-ER1D
ER1E-ER1G
ER1J
0.1
0.01
0.01
TJ=25 C
0
0.4
0.8
1.2
1.6
1.8
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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