MMBT3904W [SEMTECH]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
MMBT3904W
型号: MMBT3904W
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管 开关 光电二极管
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中文:  中文翻译
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MMBT3904W  
NPN Silicon Epitaxial Planar Transistor  
for switching and amplifier applications  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
60  
40  
6
V
V
Collector Current  
200  
mA  
mW  
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
Ptot  
200  
O
C
Tj  
150  
O
C
TS  
-55 to +150  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 15/03/2006  
MMBT3904W  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Max.  
Unit  
DC Current Gain  
at VCE = 1 V, IC = 0.1 mA  
at VCE = 1 V, IC = 1 mA  
at VCE = 1 V, IC = 10 mA  
at VCE = 1 V, IC = 50 mA  
at VCE = 1 V, IC = 100 mA  
hFE  
hFE  
hFE  
hFE  
hFE  
40  
70  
-
-
-
-
-
-
-
100  
60  
300  
-
-
30  
Collector Base Voltage  
at IC = 10 µA  
VCBO  
VCEO  
VEBO  
ICES  
60  
40  
6
-
-
V
V
Collector Emitter Voltage  
at IC = 1 mA  
Emitter Base Voltage  
at IE = 10 µA  
-
V
Collector Emitter Cutoff Current  
at VCB = 30 V  
-
50  
50  
nA  
nA  
Emitter Base Cutoff Current  
at VEB = 3 V  
IEBO  
-
Collector Emitter Saturation Voltage  
at IC = 10 mA, IB = 1 mA  
-
-
0.2  
0.3  
VCE(sat)  
V
V
IC = 50 mA, IB = 5 mA  
Base Emitter Saturation Voltage  
at IC = 10 mA, IB = 1 mA  
IC = 50 mA, IB = 5 mA  
0.65  
-
0.85  
0.95  
VBE(sat)  
Transition Frequency  
at VCE = 20 V, -IE = 10 mA, f = 100 MHz  
fT  
Cob  
Cib  
td  
300  
-
4
MHz  
pF  
pF  
ns  
Collector Output Capacitance  
at VCB = 10 V, f = 100 KHz  
-
-
-
-
-
-
Emitter Input Capacitance  
at VEB = 0.5 V, f = 100 KHz  
8
Delay Time  
35  
35  
200  
50  
at VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA  
Rise Time  
tr  
ns  
at VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA  
Storage Time  
at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA  
tstg  
tf  
ns  
Fall Time  
ns  
at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 15/03/2006  
MMBT3904W  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 15/03/2006  
MMBT3904W  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 15/03/2006  
MMBT3904W  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 15/03/2006  

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