BCW68 [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | BCW68 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCW68
PNP Silicon Epitaxial Planar Transistor
for high current application
The transistor is subdivided into three groups F, G
and H according to its DC current gain.
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-VCBO
-VCEO
-VEBO
-IC
60
V
V
45
5
V
800
mA
A
Peak Collector Current
Base Current
-ICM
-IB
1
100
mA
mA
mW
Peak Base Current
-IBM
Ptot
200
Power Dissipation
200
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
TS
- 55 to + 150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/03/2007
BCW68
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 10 V, -IC = 100 µA
F
G
H
F
G
H
F
G
H
F
G
H
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
35
50
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
at -VCE = 1 V, -IC = 10 mA
at -VCE = 1 V, -IC = 100 mA
at -VCE = 2 V, -IC = 500 mA
75
120
180
100
160
250
35
-
-
250
400
630
-
60
100
-
-
Collector Cutoff Current
at -VCB = 45 V
Emitter Cutoff Current
at -VEB = 4 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Transition Frequency
at -VCE = 5 V, -IC = 50 mA, f = 100 MHz
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
Emitter Base Capacitance
at -VBE = 0.5 V, f = 1 MHz
-ICBO
-IEBO
-
-
-
20
nA
nA
V
-
20
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VCE(sat)
-VBE(sat)
-VBE(sat)
fT
60
45
5
-
-
-
-
-
V
-
-
0.3
0.7
1.25
2
V
-
-
V
-
V
-
-
V
-
-
V
-
200
6
-
MHz
pF
pF
Cob
-
-
Ceb
-
60
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/03/2007
相关型号：
BCW68F
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SST, 3 PIN
ROHM
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